R07DS0095EJ0800
Abstract: No abstract text available
Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz Small outline package (WSON0504-2: 5.0 4.0 0.8 mm)
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RQA0011DNS
R07DS0095EJ0800
WSON0504-2:
PWSN0002ZA-B
WSON0504-2>
RQA0011â
R07DS0095EJ0800
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RQA0011
Abstract: RQA0011DNS RQA0004 R07DS0095EJ0800 PG890 RQA0011DNSTB-E
Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz Small outline package (WSON0504-2: 5.0 4.0 0.8 mm)
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RQA0011DNS
WSON0504-2:
R07DS0095EJ0800
PWSN0002ZA-B
WSON0504-2>
RQA0011"
RQA0011
RQA0011DNS
RQA0004
PG890
RQA0011DNSTB-E
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A1300 transistor
Abstract: No abstract text available
Text: NBSG16 2.5 V/3.3 V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com Description The NBSG16 is a differential receiver/driver targeted for high frequency applications. The device is functionally equivalent to the
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NBSG16
NBSG16/D
A1300 transistor
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Untitled
Abstract: No abstract text available
Text: NBSG16 2.5V/3.3V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com Description The NBSG16 is a differential receiver/driver targeted for high frequency applications. The device is functionally equivalent to the EP16 and LVEP16 devices with much higher bandwidth and lower
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NBSG16
FCBGA-16
LVEP16
NBSG16/D
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Untitled
Abstract: No abstract text available
Text: NBSG16 2.5V/3.3V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com Description The NBSG16 is a differential receiver/driver targeted for high frequency applications. The device is functionally equivalent to the EP16 and LVEP16 devices with much higher bandwidth and lower
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NBSG16
LVEP16
NBSG16/D
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NBSG16MNR2
Abstract: PEAK TRAY QFN 4x4 485G NBSG16 QFN-16 fcBGA PACKAGE thermal resistance
Text: NBSG16 2.5V/3.3V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com Description The NBSG16 is a differential receiver/driver targeted for high frequency applications. The device is functionally equivalent to the EP16 and LVEP16 devices with much higher bandwidth and lower
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NBSG16
FCBGA-16
NBSG16
LVEP16
NBSG16/D
NBSG16MNR2
PEAK TRAY QFN 4x4
485G
QFN-16
fcBGA PACKAGE thermal resistance
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Untitled
Abstract: No abstract text available
Text: NBSG16 2.5V/3.3V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com Description The NBSG16 is a differential receiver/driver targeted for high frequency applications. The device is functionally equivalent to the EP16 and LVEP16 devices with much higher bandwidth and lower
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NBSG16
LVEP16
NBSG16/D
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lga-16 4x4
Abstract: 485G NBSG16 QFN-16 BGA16 LGA16 footprint
Text: NBSG16 2.5V/3.3V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com Description The NBSG16 is a differential receiver/driver targeted for high frequency applications. The device is functionally equivalent to the EP16 and LVEP16 devices with much higher bandwidth and lower
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NBSG16
NBSG16
LVEP16
NBSG16/D
lga-16 4x4
485G
QFN-16
BGA16
LGA16 footprint
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Transistor motorola 513
Abstract: TP5002S TRANSISTOR ML1 MOTOROLA TRANSISTOR 726 MOTOROLA POWER TRANSISTOR 1N4148 BD136 motorola rf Power Transistor uhf amplifier design Transistor
Text: MOTOROLA Order this document by TP5002S/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TP5002S The TP5002S is an NPN gold metallized transistor using diffused ballast resistors for reliability and ruggedness. The TP5002S was specifically designed
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TP5002S/D
TP5002S
TP5002S
TP5002S/D*
Transistor motorola 513
TRANSISTOR ML1
MOTOROLA TRANSISTOR 726
MOTOROLA POWER TRANSISTOR
1N4148
BD136
motorola rf Power Transistor
uhf amplifier design Transistor
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485G
Abstract: NBSG16
Text: NBSG16 2.5V/3.3V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com Description The NBSG16 is a differential receiver/driver targeted for high frequency applications. The device is functionally equivalent to the EP16 and LVEP16 devices with much higher bandwidth and lower
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NBSG16
NBSG16/D
485G
NBSG16
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A1300 transistor
Abstract: transistor A1300
Text: NBSG16 2.5V/3.3V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com Description The NBSG16 is a differential receiver/driver targeted for high frequency applications. The device is functionally equivalent to the EP16 and LVEP16 devices with much higher bandwidth and lower
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NBSG16
NBSG16/D
A1300 transistor
transistor A1300
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63 1826 0306
Abstract: zo 103 ma 2SC5702 DSA003640
Text: 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-1414 Z 1st. Edition Mar. 2001 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz
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2SC5702
ADE-208-1414
63 1826 0306
zo 103 ma
2SC5702
DSA003640
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5.1 ch amplifier circuit diagram
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Integrated Amplifier Module MMG2001R2 Features • • • • • • • Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Higher Output Capability Built-in Input Diode Protection
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132-Channel
MMG2001R2
MMG2001R2
5.1 ch amplifier circuit diagram
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63 1826 0306
Abstract: Ka 2535 data sheet zo 103 ma 2SC5702 2SC5702ZS-TL-E PUSF0003ZA-A SC-89
Text: 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0752-0200 Previous ADE-208-1414 Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz
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2SC5702
REJ03G0752-0200
ADE-208-1414)
PUSF0003ZA-A
63 1826 0306
Ka 2535 data sheet
zo 103 ma
2SC5702
2SC5702ZS-TL-E
PUSF0003ZA-A
SC-89
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6904 mitsubishi
Abstract: 2SC5702
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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pth resistors datasheet
Abstract: ST014 SMA Connector Spice 11A72 tl 555 c TRANSISTOR BTL POWER AMPLIFIER AN-738 C1995 DS3883 ST05
Text: National Semiconductor Application Note 738 Stephen Kempainen January 1991 The Futurebus a backplane is a complex electrical environment that consists of many circuit elements The modeling of such an environment can become time consuming and expensive The Futurebus a Electrical Task Group Expert
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20-3A
pth resistors datasheet
ST014
SMA Connector Spice
11A72
tl 555 c
TRANSISTOR BTL POWER AMPLIFIER
AN-738
C1995
DS3883
ST05
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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nec 1251
Abstract: 2SC5702 2SC5702ZS-TL-E PUSF0003ZA-A SC-89
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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485G
Abstract: AND8020 NBLVEP16VR NBLVEP16VRMN NBLVEP16VRMNR2 NBWLVEP16VR
Text: NBLVEP16VR 2.5V/3.3V/5V ECL Differential Receiver/Driver with Oscillator Gain Stage and Enabled High Gain Outputs The NBLVEP16VR is an ECL/LVPECL oscillator gain stage with high−gain output buffers, selectable output enable and a feedback buffer. The NBLVEP16VR is a solution for crystal oscillators and
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NBLVEP16VR
NBLVEP16VR
NBLVEP16VR/D
485G
AND8020
NBLVEP16VRMN
NBLVEP16VRMNR2
NBWLVEP16VR
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100EL15
Abstract: transistor el15 MC100EL15 MC10EL15 el15 transistor
Text: MC10EL15, MC100EL15 5V ECL 1:4 Clock Distribution Chip The MC10EL/100EL15 is a low skew 1:4 clock distribution chip designed explicitly for low skew clock distribution applications. The VBB pin, an internally generated voltage supply, is available to this device
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MC10EL15,
MC100EL15
MC10EL/100EL15
MC10EL15/D
100EL15
transistor el15
MC100EL15
MC10EL15
el15 transistor
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Untitled
Abstract: No abstract text available
Text: MC10EL15, MC100EL15 5V ECL 1:4 Clock Distribution Chip The MC10EL/100EL15 is a low skew 1:4 clock distribution chip designed explicitly for low skew clock distribution applications. The VBB pin, an internally generated voltage supply, is available to this device
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MC10EL15,
MC100EL15
MC10EL/100EL15
MC10EL15/D
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MF Electronics crystal oscillator 08111
Abstract: M1710 M27DO W2600 M2800-M284 Ali M1644 H1745 H2645 M5516 M1910
Text: mp D.I.L. FULL SIZE 4b E Ml 600, M2600, Ml 700, M2700, Ml 644, M2644, M1744, M2744, Ml 610, M2610, Ml 710, M2710, Ml 636, M2636, Ml 736, M2736, D • SbMRSDl Ml 645 M2645 M1 745 M2745 D D D D 2‘17 T ■ MFE Ml 800, M1810, M1836, Ml 844, Ml 845 M2800, M2810, M2836, M2844, M2845
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DDDD217
M1600,
M2600,
M2610,
M2636,
M2644,
M2645
M1744,
M2700,
M2710,
MF Electronics crystal oscillator 08111
M1710
M27DO
W2600
M2800-M284
Ali M1644
H1745
H2645
M5516
M1910
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E412D
Abstract: information applikation information applikation mikroelektronik applikation heft Mikroelektronik Information Applikation mikroelektronik Heft "Mikroelektronik" Heft mikroelektronik Heft 12 aktive elektronische bauelemente ddr mikroelektronik DDR
Text: innjolkiij ii l _!Il j I h Information Applikation L . i m in i l- c Die vorliegende technische Information dient dea Informati. bedürfnis des Schaltungsentwicklers sowie interessierten Technikers im In- und Ausland eu speziellen aasgewählten Erzeugnissen der Halbleiterbauelemente-Industrie der
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TP5002
Abstract: TP5002S TPS002 TP500 1N4148 BD136
Text: MOT OROL A SC XSTRS/R F 4bE b3b7ES4 D 001524*1 3 «nO Tb MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP5002' TP5002S The RF Line UHF Linear Power Transistors 1.5 W — 3 8 0 t o 5 1 2 M H z U H F LIN E A R P O W E R T R A N S IS T O R S N P N S IU C O N The TP5002/S are NPN gold metallized transistors using diffused ballast resistors for
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b3b72S4
TPS002/S
TP5002
TP5002S
TPS002
TP500
1N4148
BD136
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