Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2459G Silicon NPN epitaxial planar type For low-frequency output amplification • Package ■ Features • Code MiniP3-F2 • Pin Name 1: Base 2: Collector 3: Emitter Th an W is k y
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2002/95/EC)
2SD2459G
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR ooi?b?7 m m NPN EPITAXIAL PLANAR TYPE DISCRETION OUTLINE DRAWING 2SC3240 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dimensions in mm FEATURES • High gain: Gpe^ 1 1 .5 d B r Po ^ 1 0 0 W
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2SC3240
2SC3240
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Untitled
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL PLANAR TY PE SILICON NPN EPITAXIAL PLANAR TY PE RN4602 U n it in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8 - 0.3 + 0.2 1. 6 - 0.1 • Including Two Devices in SM6 Super Mini Type w ith 6 leads
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RN4602
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Untitled
Abstract: No abstract text available
Text: BPW85 w m m f _ ▼ Vishay Telefunken Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 0 3 mm plastic package. Due to its waterclear epoxy the
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BPW85
BPW85
20-May-99
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5110 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 1 <;r s 1 1 n WÊF wmr • ■ FOR VCO APPLICATION U n it in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current
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2SC5110
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2SD947
Abstract: Q005 2SD947 j Transistor 126m
Text: ROHN CO K7 > V 7 LTD MDE 7020^=1 D Q00SÖ23 $ / J ransistors 1 HRHN 2SD947 - 7 - Z Z - 2 ? i t 0* * v7 \,-yy—m npn ->•;=\>#-v>b> ‘ S H ^ S ^ ia 'tiffl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor
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2SD947
O-126M
2SD947
T-27-15
Q005
2SD947 j
Transistor 126m
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Untitled
Abstract: No abstract text available
Text: b '~ 7> y FM W 3/FM W 4 /Transistors FM W 3 FMW 4 NPN y ' j 3 > h-?>5'Z9 — ilx'Mf •^■Jf'lSffl/General Small Signal Amp. Epitaxial Planar Dual Mini-Mold NPN Silicon Transistors K', V vJi-r • M M v jiim /D irn e n s io n s (U nit : mm 1) 7 . - / 1 - 5
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4t marking
Abstract: 2SA1734 2SC4539 marking TB
Text: TOSHIBA TOSHIBA TRANSISTOR 2SC4539 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC4539 Unit in mm PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V ce (sat)“ 0.5V (Max.) (1(2 = 700mA) High Speed Switching Time : tgtg = 0.3;i*s (Typ.)
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2SC4539
700mA)
2SA1734
40X50X0
250mm2
4t marking
2SA1734
2SC4539
marking TB
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2SD1664
Abstract: No abstract text available
Text: Is ~7 > V 7 . $ /Transistors 2SD1664 2SD1664 • 1 ^ 7 NPN \> b ~ 7 > V * $ Epitaxial Planar NPN Silicon Transistor 4 lM :friSlIIffl/M e d iu m Power Amp. • Wfê'+SÉlII/DiiTiensions Unit : mm w * 1) P c = 2 W r * 5 (4 0 X 4 0 X 0 .7 m m -tr =j 2) Low
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2SD1664
500mA/50mA)
/50mA)
2SB1132.
2SD1664
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3125 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE <;r 3 1 j s i W ÊF mm • V MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Currentt Collector Power Dissipation
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2SC3125
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4322 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE mm w êf Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . + 0.5 2.5 -0 .3 + 0.25 Low Noise Figure, High Gain. NF = 1.8dB, |S2iel2—7.5dB f —2GHz ^1-5 —0 .1 5 1 «o o
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2SC4322
--j50
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2SC4081
Abstract: 2SC2412K 2412K
Text: h 7 > y Z & //Transistors 2SC2412K/2SC4081 /2SC4617 2S C 2412K /2S C 4081 /2 S C 4 6 1 7 Epitaxial Planar NPN Silicon Transistors — / General Small Signal Amp. • W firl'&ISI/Dimensions Unit : mm * w 1) Cob COb=2.0pF (Typ.) 2) 2SA1037AK/2SA1576A/2SA1
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2SC2412K/2SC4081
/2SC4617
2412K
2SA1037AK/2SA1576A/2SA1
2SA1037AK/2SA1576A/2SA1774.
lli94
2SC2412K/2SC4
2SC4081
2SC2412K
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2SC2988
Abstract: No abstract text available
Text: Power Transistors 2SC2988 2SC2988 Silicon NPN Epitaxial Planar Type • Package Dimensions RF Power Amplifier ■ Features • P o w e r output 1 .8 W on V H F band f= 1 7 5 M H z • High gain lOdB ■ Absolute Maximum Ratings (T a = 2 5 °C ) Item Symbol
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2SC2988
175MHz)
O-126
175MHz
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ic 11105 h
Abstract: No abstract text available
Text: h 7 > V ^ ^/Transistors 2SD1767 2SD1767 T £ $ * V T \ r f \ s —yf& NPN Epitaxial Planar NPN Silicon Transistor fl£U5fc 2jiil§ffl/Low Freq. Power Amp. • feft 1) • W f^ jilS l/D im e n sio n s Unit : mm) P C = 2 W T * 5 (40X 40X0.7mm * 7 $ . y
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2SD1767
40X40X0
SC-62
2SB1189.
ic 11105 h
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RCBO
Abstract: No abstract text available
Text: TOSHIBA 2SC3123 i <;r 3 1 j * TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE W ÊF W ÊF • M T M A X IM U M RATINGS Ta = 25°C S ym bol VCBO VCEO v EBO Ic Ib PC Tj Tsts CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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2SC3123
260MHz
620fi,
RCBO
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Ferrite core TDK
Abstract: 2sc2652
Text: TOSHIBA 2SC2652 TOSHIBA TRANSISTOR i SILICON NPN EPITAXIAL PLANAR TYPE <;r i a* 1 Unit in mm 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 50V SUPPLY VOLTAGE USE • • • • • Specified 50V, 28MHz Characteristics Output Power : Po = 2 00 W p e p
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2SC2652
30MHz
28MHz
--30dB
1S1555
961001EAA2'
Ferrite core TDK
2sc2652
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Untitled
Abstract: No abstract text available
Text: 2SC2510 TO SHIBA 2 S C2 5 1 0 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2~30MHz SSB LINEAR PO W ER AM PLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Specified 28V, 28MHz Characteristics Output Power Po = 150WpEP (Min.) Power Gain Gp = 12.2dB (Min.)
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2SC2510
30MHz
28MHz
150WpEP
2-13B1A
100mA,
1S1555
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5257 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS + 0.2 2.9-0.3 • • : NF = 1.5dB f=2GHz : Gain = lOdB (f = 2GHz) Low Noise Figure High Gain •fu— — -H 1 1
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2SC5257
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Untitled
Abstract: No abstract text available
Text: h 7 > v ^ ^ / T ransistors 2 SD 17 6 0 2 SD 1 7 6 0 F5 2SD1760/2SD1760F5 NPN Freq. Power Amp. Epitaxial Planar NPN Silicon Transistors K:.V^T • W K T i £ 0 / ' D'mensions U n it: mm 1) Low V ce ( sat )= 0.5V (Typ.) Ic/I b =2A/0.2A 2) 2SB1184 • Features
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2SD1760/2SD1760F5
2SB1184
2SB1184.
2SD1760
2SD1760/
2SD1760F5
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3722K
Abstract: No abstract text available
Text: K "7 > y $ / T ransistors 2SC3722K 2SC 3722K I k°$ * '> 5 K NPN BW EßH /High Voltage Low Freq. Low Noise Amp. Epitaxial Planar Super Mini-Mold NPN Silicon Transistor h y 1 ¡ s w a t 5* 2) * V c i eo = 1 2 0V ) •(N F=0.2dB Typ.) 1.9 C.950.95 3) 2SA1455K
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2SC3722K
3722K
2SA1455K
2SA1455K.
2SC3722K
Fig12
3722K
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Untitled
Abstract: No abstract text available
Text: Tflsa'i'n 0GGSÔ7S 40E D ROHM CO LTD h -7 > ì? 7 , % /Transistors =1 IRHM 2SD1468/2SD1468S - 7=2 7 - 0 9 2SD14S3 2SD1468S NPN '>>;□> b T s v W ^ l l ^ i a ^ ^ / M e d i u m Power Amp. Epitaxial Planar NPN Silicon Transistors • 1 Vce t sat)=6mV at 1mA/0.1 mA)
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2SD1468/2SD1468S
2SD14S3
2SD1468S
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D1380
Abstract: No abstract text available
Text: / T ransistors 2SD1380 X b 0^ d r '> 7 7^ 7 ° U - ^ - ^ NPN '> U = ] > h 7 > V 7 ‘l5 :J § }^ B ^ 3 iillif fl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor Dimensions U n it: mm 1 0 W C D > A ffl2 vr Vi V; V \li 2A, Pc = -r • V ceo =32V, IC =
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2SD1380
2SB1009
2SB1009.
D1380
D1380
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TRANSISTOR 10003
Abstract: 2SB1085A 2SD1562A npn 10003 10003 NPN hFE-200 to-220 npn
Text: h "7 > v X £ / T ransistors 2SD1562A 2SD1562A NPN h 7 > v *$ 1 M j £ l i : f t i ^ [lllf f l/ L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • • 1) \ f - & H / D im e n s io n s U n it : m m ) (B V c e o = 1 6 0 V ) o 2) A S C W '/£ l'o
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2SD1562A
2SB1085A
O-220
2SD1562A
TRANSISTOR 10003
2SB1085A
npn 10003
10003 NPN
hFE-200 to-220 npn
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LM 858 IC
Abstract: 2SC4321
Text: TOSHIBA 2SC4321 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE ? <;r d 3 3 1 mm w êêêf • V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. U nit in mm 2.1 ±0.1 • Low Noise Figure, High Gain. . NF - l.ld B , |S2lel2—13dB f—1GHz 1.25±Q.l
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2SC4321
S2lel2--13dB
SC-70
CHARACTER280
--j50
--20mA
LM 858 IC
2SC4321
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