100V, 200 A MOSFET Search Results

100V, 200 A MOSFET Result Highlights (5)

Part	Manufacturer	Description
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET

100V, 200 A MOSFET Price and Stock

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Crydom Inc D1D20 Solid State Relay - 3.5-32 VDC Control - 20 A Max Load - 100 VDC Operating - Mosfet Output - Screws And Clamps Termination - Panel Mount.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	D1D20		503			1 $76.77 10 $72.32 100 $68.64 1000 $68.64 10000 $68.64	Buy Now
Microchip Technology Inc APT5020BVRG Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	APT5020BVRG		200			1 - 10 $9.95 100 $7.93 1000 $7.81 10000 $7.81	Buy Now
Microchip Technology Inc APT5020BVFRG Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	APT5020BVFRG		200			1 - 10 $9.94 100 $8.64 1000 $8.1 10000 $8.1	Buy Now
Diotec Semiconductor AG DIF120SIC022 SiC MOSFET - TO-247-4L - N - 120A - 1200V - 0.0223Ω
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	DIF120SIC022					1 - 10 - 100 - 1000 $15.28 10000 $15.28	Buy Now
Microchip Technology Inc APT4014BVFRG Trans MOSFET N-CH 400V 28A 3-Pin(3+Tab) TO-247 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	APT4014BVFRG					1 - 10 $10.48 100 $9 1000 $8.41 10000 $8.41	Buy Now

Find more 100V, 200 A MOSFET price and stock on Findchips.com

100V, 200 A MOSFET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: □IXYS IXFH 67N10 IXFH 75N10 IXFH/FM 67N10 IXFH/FM 75N10 HiPerFET Power MOSFET N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFM 67N10 IXFM 75N10 D VDSS ^D25 100 V 100V 67 A 75 A I DS on 25 mQ 200 ns 20 mfì 200 ns OD I G os Symbol	OCR Scan	67N10 75N10	PDF
transformer 0-12v Abstract: ATC 4400 Text: VRF190E G VRF190EMP(G) 100V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF190E is a thermally-enhanced version of the VRF190. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without	Original	VRF190E VRF190EMP 150MHz VRF190. M174A 30MHz, 150MHz, SD3931-10 Complian800 transformer 0-12v ATC 4400	PDF
IRFC9130 Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430 Text: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power	OCR Scan	AN-955. AN-986. 0-60V AN-964D IRFC9130 irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTN120P20T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 106A Ω 30mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings	Original	IXTN120P20T 300ns E153432 150nds 120P20T	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTR120P20T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS	Original	IXTR120P20T 300ns ISOPLUS247 E153432 -55nds 120P20T	PDF
irf*234 n Abstract: IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10 Text: INTERNATIONAL RECTIFIER 2bE D International S S Rectifier • 4flSS455 OOIQIOO b ■ HEXFET Die T-3J'?0 . Electrical Probe Specifications for N-Channel HEXFET ill Power MOSFET Die Recommended Bond Wire Size Closest Packaged Part Number Die Figure Number 5	OCR Scan	4flSS455 irf*234 n IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10	PDF
Untitled Abstract: No abstract text available Text: APTM20UM05S Single switch Series & parallel diodes MOSFET Power Module SK VDSS = 200V RDSon = 5m max @ Tj = 25°C ID = 317A @ Tc = 25°C Application CR1 D • • • S Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Q1 Features G	Original	APTM20UM05S	PDF
IXTN120P20T Abstract: IXTN120 Text: Advance Technical Information IXTN120P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 106A Ω 30mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings	Original	IXTN120P20T 300ns E153432 120P20T IXTN120P20T IXTN120	PDF
IXTR120P20T Abstract: No abstract text available Text: Advance Technical Information IXTR120P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS	Original	IXTR120P20T 300ns ISOPLUS247 E153432 120P20T IXTR120P20T	PDF
ixtk120p Abstract: No abstract text available Text: IXTK120P20T IXTX120P20T TrenchPTM Power MOSFETs VDSS ID25 = = ≤ ≤ RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier - 200V - 120A Ω 30mΩ 300ns TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXTK120P20T IXTX120P20T 300ns O-264 120P20T ixtk120p	PDF
IXTR68P20T Abstract: DS100375 DS-100-375 Text: Advance Technical Information IXTR68P20T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 200V - 44A Ω 64mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTR68P20T ISOPLUS247 E153432 68P20T IXTR68P20T DS100375 DS-100-375	PDF
IXTR140P10T Abstract: No abstract text available Text: Preliminary Technical Information IXTR140P10T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ -100V - 90A Ω 13mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTR140P10T -100V ISOPLUS247 E153432 -140A 140P10T IXTR140P10T	PDF
for switched reluctance motor Abstract: No abstract text available Text: APTM20DHM10 Asymmetrical - bridge MOSFET Power Module VDSS = 200V RDSon = 10mΩ Ω max @ Tj = 25°C ID = 175A @ Tc = 25°C Application • • • Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features • • • • OUT1	Original	APTM20DHM10 50/60Hz for switched reluctance motor	PDF
Untitled Abstract: No abstract text available Text: MP1907 100V, 2.5A, High Frequency Half-bridge Gate Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP1907 is a high frequency, 100V half bridge N-channel power MOSFET driver. Its low side and high side driver channels are independently controlled and matched with less	Original	MP1907 MP1907 MO-229,	PDF

Untitled Abstract: No abstract text available Text: Advance Technical Information IXTT68P20T IXTH68P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 200V - 68A Ω 55mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXTT68P20T IXTH68P20T O-268 O-247 68P20T	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTT68P20T IXTH68P20T RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 200V - 68A Ω 55mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXTT68P20T IXTH68P20T O-268 O-247 -100V 68P20T	PDF
transistor 2432 Abstract: No abstract text available Text: APTM20SKM05 Buck chopper MOSFET Power Module VDSS = 200V RDSon = 5mΩ Ω max @ Tj = 25°C ID = 317A @ Tc = 25°C Application • • AC and DC motor control Switched Mode Power Supplies Features • • • • 0/VBUS OUT Benefits • • • • Outstanding performance at high frequency operation	Original	APTM20SKM05 50/60Hz transistor 2432	PDF
Untitled Abstract: No abstract text available Text: APTM20DAM05 Boost chopper MOSFET Power Module VDSS = 200V RDSon = 5mΩ Ω max @ Tj = 25°C ID = 317A @ Tc = 25°C Application • • • AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features • • • • OUT Benefits •	Original	APTM20DAM05 50/60Hz	PDF
IXTH140P10T Abstract: IXTT140P10T Text: Preliminary Technical Information IXTT140P10T IXTH140P10T TrenchPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ -100V -140A Ω 12mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXTT140P10T IXTH140P10T -100V -140A O-268 O-247 140P10T IXTH140P10T	PDF
Untitled Abstract: No abstract text available Text: APTM20SKM04 Buck chopper MOSFET Power Module VDSS = 200V RDSon = 4mΩ Ω max @ Tj = 25°C ID = 372A @ Tc = 25°C Application • • AC and DC motor control Switched Mode Power Supplies Features • • • • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance	Original	APTM20SKM04 50/60Hz	PDF
317 6 terminal diode Abstract: No abstract text available Text: APTM20DUM05 Dual common source MOSFET Power Module VDSS = 200V RDSon = 5mΩ Ω max @ Tj = 25°C ID = 317A @ Tc = 25°C Application • • • AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features • • • • S D2 Benefits	Original	APTM20DUM05 50/60Hz 317 6 terminal diode	PDF
Untitled Abstract: No abstract text available Text: APTM20DAM04 Boost chopper MOSFET Power Module VDSS = 200V RDSon = 4mΩ Ω max @ Tj = 25°C ID = 372A @ Tc = 25°C Application • • • AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features • • • • 0/VBUS OUT Benefits	Original	APTM20DAM04 50/60Hz	PDF
Untitled Abstract: No abstract text available Text: IXTA 86N20T IXTP 86N20T IXTQ 86N20T Trench Gate Power MOSFET VDSS ID25 = 200 V = 86 A Ω ≤ 29 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 200	Original	86N20T O-263 O-220 150Nanoseconds	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information TrenchHVTM Power MOSFET IXTH130N20T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1MΩ 200 200 V V VGSM Transient	Original	IXTH130N20T 130N20T	PDF

100V, 200 A MOSFET Search Results

100V, 200 A MOSFET Result Highlights (5)

100V, 200 A MOSFET Price and Stock

Crydom Inc D1D20

Microchip Technology Inc APT5020BVRG

Microchip Technology Inc APT5020BVFRG

Diotec Semiconductor AG DIF120SIC022

Microchip Technology Inc APT4014BVFRG

100V, 200 A MOSFET Datasheets Context Search

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transformer 0-12v

IRFC9130

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irf*234 n

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IXTN120P20T

IXTR120P20T

ixtk120p

IXTR68P20T

IXTR140P10T

for switched reluctance motor

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transistor 2432

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IXTH140P10T

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317 6 terminal diode

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