GR-1435-CORE
Abstract: GR-1435 EIA-455-B TIA-455-3A EIA-455 EIA/TIA 455-8 49258 TIA-455-3A section C EIA-455-11 EIA-455-36A
Text: Product Specification 108-2167 11Jul07 Rev C MPO and MPO SECURE Multimode Fiber Optic Connector and Adapter | | 1. SCOPE 1.1. Content This specification, which is based on GR-1435-CORE, covers the performance, tests and quality requirements for the MPO multimode connectors with bare ribbon fiber and the MPO adapters.
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11Jul07
GR-1435-CORE,
07Oct05
GR1435-CORE,
TIA/EIA-455-20A.
GR-1435-CORE
GR-1435
EIA-455-B
TIA-455-3A
EIA-455
EIA/TIA 455-8
49258
TIA-455-3A section C
EIA-455-11
EIA-455-36A
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PDF
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250M
Abstract: gas10
Text: Product Specification 108-5701 11JUL07 Rev. F DDR S.O.DIMM Socket 200 Positions 1. Scope : 1.1 Contents This specification covers the requirements for product performance, test methods and quality assurance provisions of DDR S.O.DIMM Socket 200 Positions Combine to Gold Plating S.O.DIMM.
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11JUL07
250M
gas10
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PDF
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GR-1435-CORE
Abstract: FOTP-171 EIA-455 90 degree fiber array
Text: Qualification Test Report 501-556 11Jul07 Rev C MPO and MPO SECURE Multimode Fiber Optic Connector and Adapter | | 1. INTRODUCTION 1.1. Purpose | | Testing was performed on MPO multimode fiber optic connectors and adapters to determine their conformance to the requirements of Tyco Electronics Product Specification 108-2167, Revision C.
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11Jul07
16May05
07Oct05.
G953-006.
GR-1435-CORE
FOTP-171
EIA-455
90 degree fiber array
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Untitled
Abstract: No abstract text available
Text: PZT159 PNP Silicon Planar High Current Transistor COLLECTOR 2, 4 P b Lead Pb -Free SOT-223 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit Collector to Base Voltage VCBO -100 V
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PZT159
OT-223
11-Jul-07
OT-223
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PDF
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DALE RH-25
Abstract: 18546 RH005 RE77N rh 25 25 RE75G NH010 RE60G RE65G NH-250
Text: RH, NH Vishay Dale Wirewound Resistors, Military, MIL-PRF-18546 Qualified, Type RE, Aluminum Housed, Chassis Mount FEATURES • Molded construction for total environmental protection Pb-free Available • Complete welded construction • Meets applicable requirements of
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MIL-PRF-18546
MIL-PRF-18546
MIL-PRF18546
MIL-STD-202
RH-10,
RH-100
RH-250
11-Jul-07
DALE RH-25
18546
RH005
RE77N
rh 25 25
RE75G
NH010
RE60G
RE65G
NH-250
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PDF
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AD670
Abstract: No abstract text available
Text: 8-Bit Low Cost Signal Conditioning ADC AD670 1.0 2.0 3.0 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as
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Original
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AD670
MIL-PRF-38534,
com/AD670
ASD0012807
20-DEC-01
27-Mar-02
4-Mar-03
11-Jul-07
19-Feb-08
AD670
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PDF
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74843
Abstract: AN609
Text: Si1404BDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si1404BDH
AN609
11-Jul-07
74843
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AN609
Abstract: No abstract text available
Text: Si1472DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si1472DH
AN609
11-Jul-07
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PDF
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Untitled
Abstract: No abstract text available
Text: AVAILABLE PERFORMANCE SPECIFICATION Lower Frequency: Upper Frequency: Tuning Voltage: Supply Voltage: Output Power: Supply Current: Harmonic Suppression 2nd Harmonic: 3rd Harmonic: Pushing: Pulling, all Phases: Tuning Sensitivity: @ 10kHz offset: Phase Noise
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10kHz
100kHz
CVCO55BE-2110-2170
11-Jul-07
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PDF
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D1002-BD
Abstract: DM6030HK TS3332LD XD1002-BD XD1002-BD-000V XD1002-BD-EV1
Text: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier July 2007 - Rev 11-Jul-07 D1002-BD Features Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
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Original
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11-Jul-07
D1002-BD
MIL-STD-883
XD1002-BD-000V
XD1002-BD-EV1
XD1002-BD
D1002-BD
DM6030HK
TS3332LD
XD1002-BD-000V
XD1002-BD-EV1
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RH005
Abstract: Dale Resistor RH50 NH010 RE60G RE65G "RH-5" RH-25 Dale Resistor rh 10 RE Military
Text: RH, NH Vishay Dale Wirewound Resistors, Military, MIL-PRF-18546 Qualified, Type RE, Aluminum Housed, Chassis Mount FEATURES • Molded construction for total environmental protection Pb-free Available • Complete welded construction • Meets applicable requirements of
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MIL-PRF-18546
MIL-PRF-18546
MIL-PRF18546
18-Jul-08
RH005
Dale Resistor RH50
NH010
RE60G
RE65G
"RH-5"
RH-25
Dale Resistor rh 10
RE Military
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PDF
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7408
Abstract: 7408 and AN609 Si6968BEDQ si6968 1-50487 235742 112274
Text: Si6968BEDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si6968BEDQ
AN609
11-Jul-07
7408
7408 and
si6968
1-50487
235742
112274
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PDF
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74848
Abstract: AN609 Si6969BDQ
Text: Si6969BDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si6969BDQ
AN609
11-Jul-07
74848
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PDF
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RWR82
Abstract: NH010
Text: RH, NH Vishay Dale Wirewound Resistors, Military, MIL-PRF-18546 Qualified, Type RE, Aluminum Housed, Chassis Mount FEATURES • Molded construction for total environmental protection Pb-free Available • Complete welded construction • Meets applicable requirements of
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Original
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MIL-PRF-18546
MIL-PRF-18546
MIL-PRF18546
RH005
29-May-08
RWR82
NH010
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PDF
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RTO 50
Abstract: No abstract text available
Text: RTO 50 Vishay Sfernice Power Resistor, Thick Film Technology FEATURES • 50 W at 25 °C Heatsink Mounted • Adjusted by sand trimming RoHS • Leaded or surface mount versions COMPLIANT • High power to size ratio • Non inductive element Because of the knowledge and experience in Thick Film technology, Vishay Sfernice has been able to develop a high power
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08-Apr-05
RTO 50
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PZT951
Abstract: No abstract text available
Text: PZT159 PNP Silicon Planar High Current Transistor COLLECTOR 2, 4 P b Lead Pb -Free SOT-223 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit Collector to Base Voltage VCBO -100 V
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Original
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PZT159
OT-223
13-Jan-06
PZT951
OT-223
PZT951
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PDF
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Untitled
Abstract: No abstract text available
Text: Thursday, Mar 13, 2008 1:54 PM / 8-Bit Low Cost Signal Conditioning ADC AD670 1.0 2.0 3.0 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as
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Original
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AD670
MIL-PRF-38534,
com/AD670
MIL-STD-883
ASD0012807
20-DEC-01
27-Mar-02
4-Mar-03
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PDF
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DALE RH-25
Abstract: rh-50 dale resistors RH050 RH005 RH-25 rh010 RE75G NH010 "RH-5" rh-10 dale resistors
Text: RH, NH Vishay Dale Wirewound Resistors, Military, MIL-PRF-18546 Qualified, Type RE, Aluminum Housed, Chassis Mount FEATURES • Molded construction for total environmental protection • Complete welded construction • Meets applicable requirements of MIL-PRF-18546
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MIL-PRF-18546
MIL-PRF-18546
MIL-PRF18546
RH005
NH005
18-Jul-08
DALE RH-25
rh-50 dale resistors
RH050
RH005
RH-25
rh010
RE75G
NH010
"RH-5"
rh-10 dale resistors
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PDF
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23741
Abstract: AN609 Si6968ADQ
Text: Si6968ADQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si6968ADQ
AN609
11-Jul-07
23741
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PDF
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74801
Abstract: 412600 AN609 Si6983DQ 74909
Text: Si6983DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si6983DQ
AN609
11-Jul-07
74801
412600
74909
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PDF
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MIC24F11-0101
Abstract: MIC24412-0128
Text: more than you expect Integrated 10/100 Base-T RJ45 Through Hole Unshielded Series LANDatacom Typical Electrical Characteristics 1 Inductance 350uH Min. 1500VAC Dielectic Rating 1CT:1CT Turns Ratio Insertion Loss -1.0dB max. -18dB min. -16dB min. Return Loss
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350uH
1500VAC
-18dB
-16dB
-14dB
-12dB
-35dB
100kHz,
1MHz-100MHz
MIC24F11-0101
MIC24412-0128
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PDF
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DALE RH-25
Abstract: RH050 RH005 Dale Resistor RH50 18546 NH010 RE60G RE65G "RH-5" rh-50 dale resistors
Text: RH, NH Vishay Dale Wirewound Resistors, Military, MIL-PRF-18546 Qualified, Type RE, Aluminum Housed, Chassis Mount FEATURES • Molded construction for total environmental protection Pb-free Available • Complete welded construction • Meets applicable requirements of
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Original
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MIL-PRF-18546
MIL-PRF-18546
MIL-PRF18546
08-Apr-05
DALE RH-25
RH050
RH005
Dale Resistor RH50
18546
NH010
RE60G
RE65G
"RH-5"
rh-50 dale resistors
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PDF
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Leaded Fixed Wirewound Resistors
Abstract: BV-1 501 yx 801 relay coil 270r yx 801 led Dale RS-1A fusible resistor draloric ska Dale Resistor metal oxide cw-2b FUSE M2 250e yx 801 ic
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book leaded fixed wirewound resistors vishay vse-db0008-0806 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0008-0806
Leaded Fixed Wirewound Resistors
BV-1 501
yx 801
relay coil 270r
yx 801 led
Dale RS-1A fusible resistor
draloric ska
Dale Resistor metal oxide cw-2b
FUSE M2 250e
yx 801 ic
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PDF
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AN609
Abstract: Si6981DQ
Text: Si6981DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si6981DQ
AN609
11-Jul-07
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