Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1N4148 1N4154 Search Results

    1N4148 1N4154 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    1N4148WS Toshiba Electronic Devices & Storage Corporation Switching Diode, 100 V, 0.25 A, 2 in 1, SOD-323 Visit Toshiba Electronic Devices & Storage Corporation
    1N4148WT Toshiba Electronic Devices & Storage Corporation Switching Diode, 100 V, 0.25 A, SOD-523 Visit Toshiba Electronic Devices & Storage Corporation

    1N4148 1N4154 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Switching

    Abstract: 1N3065 1n914 equivalent 1N3605 1N4151 equivalent 1N3062 1N4153 silicon diodes 1N4863 datasheets diode 1n3064 1N3063
    Text: Silicon Diodes DO-35 Case Switching Diodes TYPE NO. 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605 1N4148 1N4150 1N4151 1N4152 1N4153 1N4154 1N4444 1N4446 1N4447 1N4448 1N4449 1N4454 1N4863 1N4864 VRRM V MAX 100 100 75 75 75 75 50 40 75 100


    Original     		DO-35 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605 Switching 1N3065 1n914 equivalent 1N3605 1N4151 equivalent 1N3062 1N4153 silicon diodes 1N4863 datasheets diode 1n3064 1N3063 PDF

    1N4150

    Abstract: 25 Ampere Silicon Power Diodes 1N4148M 1n914a-1
    Text: HITANO ENTERPRISE CORP. 1N914 THRU 1N4148~1N4454 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING VOLTAGE RANGE -50 to 100 Volts DIODES CURRENT - 0.075 to 0.2 Ampere FEATURES * Silicon epitaxial planar diodes * Low power loss, high efficiency * Low leakage


    Original     		1N914 1N4148 1N4454 DO-34 DO-35 MIL-STD-202E, 1N4150 1N4151 25 Ampere Silicon Power Diodes 1N4148M 1n914a-1 PDF

    SL415

    Abstract: No abstract text available
    Text: HIGH SPEED SWITCHING DIODES 250mW/500mW DO-35 CASE 28 SURGE PART NUMBER •■■■ Peak Reverse voltage VRM 1N914 :,:v -v 100 1N4148 1N4150 1N4151 1N4154 1N4448 1N4454 Forwan Voltage wmmm» % 75 75 75 75 50 50 25 75 50 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0


    OCR Scan     		250mW/500mW DO-35 1N914 1N914A 1N914B 1N4148 1N4150 1N4151 1N4154 1N4448 SL415 PDF

    1N5426

    Abstract: 1N5208 AMERICAN POWER DEVICES 1n914
    Text: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current


    Original     		00000S3 DO-35 400mW 1N4150 1N4152 1N4153 1N4305 DO-35 1N5426 1N5208 AMERICAN POWER DEVICES 1n914 PDF

    1N4148-1N4154

    Abstract: lN4148 N4148 1N4148-A 1N3064 1N4148 1N4154 1N4454 1N914 SC-40
    Text: 18 6 9 10 5 CAPAR C OM PON E N T S 71 CORP "" 7LC 003 0 0 DE I laa^lDS Q0PD300 ? | j APAR High Speed Switching Diodes Series 1N4148-1N4154 CORP. Pp • ■ ■ ■ q ti T ' ' o- 3 - 0 ?■ Package Outline and Physical Dimensions ir o c High reliability 0.2 Fit


    OCR Scan     		1N4148-1N4154 DO-35) DO-35 SC-40 1N4148 1N914 1N4154 1N4454 1N4148 01/iF 1N4148-1N4154 lN4148 N4148 1N4148-A 1N3064 1N4454 SC-40 PDF

    ALL4150

    Abstract: 1N4606
    Text: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current


    Original     		00000S3 DO-35 ALL4152 ALL4153 ALL4450 ALL4451 ALL4453 ALL4454 500mW ALL4150 1N4606 PDF

    BA513

    Abstract: iskra diode BA523 BA521 BA519 DIODE BA531 BA521 diode BA531 iskra BA533
    Text: ISKRA ELECTRONICS INC SSE D • 4063477 Silicijeve planarne signalne diode Silicon planar signal diodes *'. lien Tip/Type BA 511 BA 513 BA 517 BA 518 BA 519 BA 520 BA 521 BA 523 BA 531 BA 533 BA 543 BA 544 BA 545 BA 546 BA 547 :io o m 1N4148 1N4448 1N4150


    OCR Scan     		BA511 1N4148 BA513 1N4448 BAS17 1N4150 701/iA BA518 1N4151 BA519 iskra diode BA523 BA521 DIODE BA531 BA521 diode BA531 iskra BA533 PDF

    1N914 pspice

    Abstract: 1N4148 pspice 1N4148 SMA 1N4004 SMB 1N4148 JAN Diode 1N4004 SMA JAN 1N4148 1N4148 smc ss14 diode DIODE 1N4004
    Text: Discrete Temperature range Software version Revision date 1N3064 DO-35-2 Electrical 25°C N/A N/A 1N4004 DO-41-2 Electrical 25°C 6.0 Jul 05, 2002 1N4148 DO-35-2 Electrical 25°C 6 Jan 01, 1994 1N4149 DO-35-2 Electrical 25°C N/A N/A 1N4150 DO-35-2 Electrical


    Original     		1N3064 1N4004 1N4148 1N4149 1N4150 1N4151 1N4152 1N4154 1N4305 1N4448 1N914 pspice 1N4148 pspice 1N4148 SMA 1N4004 SMB 1N4148 JAN Diode 1N4004 SMA JAN 1N4148 1N4148 smc ss14 diode DIODE 1N4004 PDF

    jedec Package do

    Abstract: No abstract text available
    Text: noNm •JEDEC Standard <Absolute maximum ratings> >f s m Part No. V rm V Vr (V) Ifm (mA) to (mA) Ip (mA) 1n 8 (A) P (mW) Tj Topr Tstg CO Cc) Cc) Package 1N4148 1N914 100 75 450 150 200 2 500 200 - 6 5 - + 200 - 6 5 — + 200 DO-35 1N4149 1N916 100 75 450


    OCR Scan     		1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N4154 1N4446 1N4447 1N4448 jedec Package do PDF

    FD300 diode

    Abstract: BAX13 DIODE BA243 FD333 FD300 DIODE BA244 BA244 BA200 lN914 155pa3
    Text: Sem iconductors Fairchild Sem iconductors Diodes C om puter D iodes B y A sce n d in g trr G la ss p acka g e REFEREN CE T A B L E Code trr nse c M ax. Bv v o lts M in nA M ax lR FD700 FD777 BAX13 BAY71 BAY74 1N914 1N916 1N4148 1N4448 0.7 0.75 4.0 4.0 4.0


    OCR Scan     		FD700 35200F FD777 35201D BAX13 35202B BAY71 35203X BAY74 3S204R FD300 diode DIODE BA243 FD333 FD300 DIODE BA244 BA244 BA200 lN914 155pa3 PDF

    1S2473 equivalent

    Abstract: 1S2473 1S2471 1S1555 2CK80-2CK85 1S2471 equivalent DO-35 ic vrm 2CK70 1N4149-1N4154
    Text: 9.高速开关二极管 序号 型号 IC VRM Trr mA V ns 4 外形 1 1N4148 150 100V 2 1N4149-1N4154 150 35-100V 2-4 DO-35 3 1N4446-1N4454 150 40-100V 1-4 DO-35 4 1N914 75


    Original     		1N4148 1N4149-1N4154 5-100V DO-35 1N4446-1N4454 0-100V 1N914 BAV17-BAV21 5-250V 1S2473 equivalent 1S2473 1S2471 1S1555 2CK80-2CK85 1S2471 equivalent DO-35 ic vrm 2CK70 1N4149-1N4154 PDF

    1N4536

    Abstract: 1n4531
    Text: TYPES 1N4531 THRU 1N4534, 1N4536 SILICON SWITCHING DIODES B U L L E T I N N O . D L -S 7 3 9 7 7 4 , M A R C H 1 9 6 7 - R E V I S E D M A R C H 1 9 7 3 FAST SWITCHING DIODES • Rugged Double-Plug Construction Electrical Equivalents 1N4531 . . . 1N4148 . . . 1N914


    OCR Scan     		1N4531 1N4534, 1N4536 1N4531 1N4148 1N914 1N4533. 1N4152 1N3605 1N4532 PDF

    1N4548

    Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
    Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A


    Original     		1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428 PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    FD6666

    Abstract: FD6666 equivalent jantx2n2920 355ML 1N5318 1N4148 JANTX 1N4148 JAN 1N5319 JANTX2N2222A JANTX2N918
    Text: MILITARY APPROVED DIODES & TRANSISTORS DIODES JAN1N251 JAN1N457 JAN1N458 JAN1N459 JAN1N483B JAN-TX1N483B JAN1N485B JAN-TX1N485B JAN1N486B JAN-TX1N486B JAN1N643 JAN1N658 JAN1N662 JAN1N663 JAN1N753A JAN1N754A JAN1N755A JAN1N756A JAN1N757A JAN1N758A JAN1N759A


    OCR Scan     		JAN1N251 JAN1N457 JAN1N458 JAN1N459 JAN1N483B JAN-TX1N483B JAN1N485B JAN-TX1N485B JAN1N486B JAN-TX1N486B FD6666 FD6666 equivalent jantx2n2920 355ML 1N5318 1N4148 JANTX 1N4148 JAN 1N5319 JANTX2N2222A JANTX2N918 PDF

    in4447

    Abstract: IN4446 in4449 DIODe IN4446 1n914 equivalent IN4I48 in4448 IN4305 1N4148 1N4149
    Text: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20


    OCR Scan     		100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 in4447 IN4446 in4449 DIODe IN4446 1n914 equivalent IN4I48 in4448 IN4305 1N4148 PDF

    1N914 CJ 4148

    Abstract: No abstract text available
    Text: 1N914 THRU RECTIFIER SPECIALISTS 1N 4148 1N 4454 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES * * * * * Silicon epitaxial planar diodes Low power loss, high efficiency Low leakage


    Original     		1N914 DO-34 DO-35 MIL-STD-202E, SbA766gDrSbA8 1N914 CJ 4148 PDF

    DIODe IN4446

    Abstract: in4447 in4449 IN4I48 1n914 equivalent in4448 JANTX 1N916 1n916 equivalent IN4446 1N916 JANTX
    Text: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20


    OCR Scan     		100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 DIODe IN4446 in4447 in4449 IN4I48 1n914 equivalent in4448 JANTX 1N916 1n916 equivalent IN4446 1N916 JANTX PDF

    CMPD2836

    Abstract: CMPD2838 CMPD914 1N4454 CMPD7000 1N4148.1N4448 1N4148 1N4154 1N4448 1N914
    Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å


    Original     		CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 CMPD2836 CMPD2838 CMPD914 1N4454 CMPD7000 1N4148.1N4448 1N4148 1N4154 1N4448 1N914 PDF

    1N457 equivalent

    Abstract: 1n916 equivalent 1n914 sot 23 1n914 equivalent 1N3070 equivalent 1N916 1N3064 FDH444 1N3070 fdh300
    Text: Surface Mount Diodes General Purpose & Specialty Surface Mount Diodes continued The National "MMBD" Series provides the SOT-23 electrical equivalent of the standard devices listed. Each family is available in 5 configurations. MMBD 1200 FAMILY 1N914 1N914A


    OCR Scan     		OT-23 1N914 1N914A 1N916 1N916A 1N3064 1N4148 1N4149 1N4151 1N4154 1N457 equivalent 1n916 equivalent 1n914 sot 23 1n914 equivalent 1N3070 equivalent FDH444 1N3070 fdh300 PDF

    1n4148 die

    Abstract: DIODE CHIP 1N4148 1n4148 die chip 1N4148.1N4448 1n914 equivalent 1N4454 1N4148 CMPD914 1N914B 1N4148 chip
    Text: PROCESS CPD63 Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å


    Original     		CPD63 CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 1n4148 die DIODE CHIP 1N4148 1n4148 die chip 1N4148.1N4448 1n914 equivalent 1N4454 1N4148 CMPD914 1N914B 1N4148 chip PDF

    DIODO 1N4148

    Abstract: diodo 1N914 1N4532 2 935 diodo in4727 1N4727 1N4148 1N4149 DZ806 1N4152
    Text: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N 914 1N 914A 1N 9 1 4 B BV @ 100/1A Min. V I r @ 25°C Max. (ri A) @ V r (V) V f Max. (V) @ I f (m A) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Num ber 100 100 25 30 1.00 10 4 25 20 1.00


    OCR Scan     		100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 DIODO 1N4148 diodo 1N914 1N4532 2 935 diodo in4727 1N4727 1N4148 DZ806 1N4152 PDF

    1n4148

    Abstract: 1n4148 die chip DIODE CHIP 1N4148 1N4148.1N4448 1N4154 1N4448 1N4454 1N914 1N914B CMPD4448
    Text: PROCESS CPD63 Central Switching Diode TM Semiconductor Corp. High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization


    Original     		CPD63 CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 1n4148 1n4148 die chip DIODE CHIP 1N4148 1N4148.1N4448 1N4154 1N4448 1N4454 1N914 1N914B CMPD4448 PDF

    1N4148 chip

    Abstract: DIODE CHIP 1N4148 1n4148 die 1n4148 1n4148 die chip 1N4148.1N4448 CPD83V DIODE R3 1N4154 1N4448
    Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x11 MILS Die Thickness 7.1MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å


    Original     		CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 1N4148 chip DIODE CHIP 1N4148 1n4148 die 1n4148 1n4148 die chip 1N4148.1N4448 CPD83V DIODE R3 1N4154 1N4448 PDF