Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1SS336 Search Results

    SF Impression Pixel

    1SS336 Price and Stock

    Toshiba America Electronic Components 1SS336

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 1SS336 94,982
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Toshiba America Electronic Components 1SS336(TE85R)

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 1SS336(TE85R) 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    1SS336 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS336 Kexin Ultra High Speed Switching Application Original PDF
    1SS336 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS336 TY Semiconductor Ultra High Speed Switching Application - SOT-23 Original PDF
    1SS336 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS336 Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) Scan PDF
    1SS336 Toshiba DIODE Scan PDF
    1SS336TE85L Toshiba 1SS336 - DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS336TE85L2 Toshiba 1SS336 - DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS336TE85R Toshiba 1SS336 - DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS336TE85R2 Toshiba 1SS336 - DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF

    1SS336 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TD236

    Abstract: 1SS336
    Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm Small package : SC-59 Low forward voltage : VF 3 = 0.84V (typ.) Fast reverse recovery time : trr = 7ns (typ.) Small total capacitance : CT = 7pF (typ.)


    Original     		PDF 1SS336 SC-59 TD-236MOD TD236 1SS336

    1SS336

    Abstract: No abstract text available
    Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm l Small package : SC-59 l Low forward voltage : VF 3 = 0.84V (typ.) l Fast reverse recovery time : trr = 7ns (typ.) l Small total capacitance : CT = 7pF (typ.)


    Original     		PDF 1SS336 SC-59 1SS336

    1SS336

    Abstract: td236
    Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm z Small package : SC-59 z Low forward voltage : VF 3 = 0.84V (typ.) z Fast reverse recovery time : trr = 7ns (typ.) z Small total capacitance : CT = 7pF (typ.)


    Original     		PDF 1SS336 SC-59 1SS336 td236

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS336 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage: VF3 = 0.84 V Typ . 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast reverse recovery time: trr = 7ns(Typ). +0.05 0.1-0.01 0-0.1 +0.1 0.97-0.1 : CT = 7pF(Typ). +0.1 0.38-0.1 Small total capacitance


    Original     		PDF 1SS336 OT-23

    1SS336

    Abstract: No abstract text available
    Text: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION 1SS336 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage: VF3 = 0.84 V Typ . 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast reverse recovery time: trr = 7ns(Typ). +0.05 0.1-0.01 0-0.1 +0.1 0.97-0.1 : CT = 7pF(Typ).


    Original     		PDF 1SS336 OT-23 1SS336

    1SS336

    Abstract: No abstract text available
    Text: 1SS336 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS336 ○ 超高速度スイッチング用 z z z z : : : : 外形が小さい。 順電圧特性が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm


    Original     		PDF 1SS336 SC-59 236MOD 100mA 200mA 1SS336

    Untitled

    Abstract: No abstract text available
    Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit in mm Small package : SC-59 Low forward voltage : VF 3 = 0.84V (typ.) Fast reverse recovery time : trr = 7ns (typ.) Small total capacitance : CT = 7pF (typ.)


    Original     		PDF 1SS336 SC-59 961001EAA2'

    1SS336

    Abstract: No abstract text available
    Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm z Small package : SC-59 z Low forward voltage : VF 3 = 0.84V (typ.) z Fast reverse recovery time : trr = 7ns (typ.) z Small total capacitance : CT = 7pF (typ.)


    Original     		PDF 1SS336 SC-59 1SS336

    Untitled

    Abstract: No abstract text available
    Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm l Small package : SC-59 l Low forward voltage : VF 3 = 0.84V (typ.) l Fast reverse recovery time : trr = 7ns (typ.) l Small total capacitance : CT = 7pF (typ.)


    Original     		PDF 1SS336 SC-59 TD-236MOD 100mA 200mA

    TD236

    Abstract: No abstract text available
    Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm z Small package : SC-59 z Low forward voltage : VF 3 = 0.84V (typ.) z Fast reverse recovery time : trr = 7ns (typ.) z Small total capacitance : CT = 7pF (typ.)


    Original     		PDF 1SS336 SC-59 TD236

    1ss346

    Abstract: No abstract text available
    Text: DOC. NO. 04CB-000429 PART NO. 0407-000118 1SS336 SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION, • Small Package : SC—59 • Low Forward Voltage : VF=0.84V Typ. • Fast Reverse Recovery Time : trr=7ns(Typ.) • Small Total Capacitance


    Original     		PDF 04CB-000429 1SS336 101MA 200mA 1SS346 1ss346

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    Untitled

    Abstract: No abstract text available
    Text: 1SS336 T O SH IB A 1SS336 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0 .5 2 .5 - 0 . 3 : SC-59 : Vp 3 = 0.84V (Typ.) : trr = 7ns (Typ.) : Or = 7pF (Typ.) + 0 .2 5 1 .5 - 0 . 1 5 , 0 .9 5 Small Package


    OCR Scan     		PDF 1SS336 SC-59

    Untitled

    Abstract: No abstract text available
    Text: 1SS336 T O SH IB A 1SS336 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. . • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + 0 .5 2 .5 - 0 . 3 : SC-59 : Vp 3 = 0.84V (Typ.)


    OCR Scan     		PDF 1SS336 SC-59

    1SS336

    Abstract: No abstract text available
    Text: TOSHIBA 1SS336 1 SS336 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance +0.5 2 .5 - 0.3 : SC-59 : Vjr 3 = 0.84V (Typ.)


    OCR Scan     		PDF 1SS336 SC-59 O-236MOD 961001EAA2' 1SS336

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS336 TOSHIBA DIODE 1 SILICON EPITAXIAL PLANAR TYPE < ; < ; * 3 f i U nit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. + 0.5 2 . 5 - 0 .3 • Small Package :SC-59 + 0 ,2 5 1. 5 - 0 . 1 5 . • Low Forward Voltage :Vf 3 = 0.84V (Typ.) • Fast Reverse RecoveryTime


    OCR Scan     		PDF 1SS336 SC-59

    1SS336

    Abstract: No abstract text available
    Text: 1SS336 SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm +0.5 2 5-0.3 . Small Package :SC-59 . Low Forward Voltage :V f =0 .84V Typ. + 0.25 1.5 -0 .1 5 , . Fast Reverse Recovery Time : trr= ?n s (Typ.) . Small Total Capacitance


    OCR Scan     		PDF 1SS336 SC-59 100mA 200raA 1SS336

    1S1585

    Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
    Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80


    OCR Scan     		PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737