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    TD236 Price and Stock

    Samtec Inc DW-04-07-T-D-236

    FLEXIBLE BOARD STACKING HEADER W
    Free Sample
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    DigiKey DW-04-07-T-D-236 Bulk 1
    • 1 $2.54
    • 10 $2.54
    • 100 $2.54
    • 1000 $2.54
    • 10000 $2.54
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    Samtec Inc DW-05-10-T-D-236

    CONN HDR 10POS 0.1 STACK T/H TIN
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DW-05-10-T-D-236 Bulk 1
    • 1 $1.1
    • 10 $1.1
    • 100 $1.1
    • 1000 $1.1
    • 10000 $1.1
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    Newark DW-05-10-T-D-236 Bulk 1
    • 1 $1.08
    • 10 $0.94
    • 100 $0.81
    • 1000 $0.591
    • 10000 $0.49
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    Powell Electronics DW-05-10-T-D-236 398 1
    • 1 $1.19
    • 10 $1.19
    • 100 $0.75
    • 1000 $0.49
    • 10000 $0.49
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    Master Electronics DW-05-10-T-D-236
    • 1 -
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    • 100 $0.9038
    • 1000 $0.5522
    • 10000 $0.3643
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    Sager DW-05-10-T-D-236 603 1
    • 1 $1.13
    • 10 $1.13
    • 100 $0.75
    • 1000 $0.49
    • 10000 $0.41
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    JRH Electronics DW-05-10-T-D-236

    STACKING BOARD CONNECTOR, DW SER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DW-05-10-T-D-236 Bulk 1
    • 1 $2.16
    • 10 $2.16
    • 100 $2.16
    • 1000 $0.89091
    • 10000 $0.89091
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    Samtec Inc DW-10-07-T-D-236

    FLEXIBLE BOARD STACKING HEADER W
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DW-10-07-T-D-236 Bulk 1
    • 1 $5.04
    • 10 $5.04
    • 100 $5.04
    • 1000 $5.04
    • 10000 $5.04
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    JRH Electronics MTMM-101-09-T-D-236

    CONN HEADER VERT 2POS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MTMM-101-09-T-D-236 Bulk 1
    • 1 $0.51
    • 10 $0.51
    • 100 $0.51
    • 1000 $0.2
    • 10000 $0.2
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    Find more TD236 price and stock on Findchips.com

    TD236 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TD236 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    TD236 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    TD236 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    TD236 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    TD236 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S5 100 B112 MT RELAY

    Abstract: CK 66 UL 94V-0 LCD sh 0357 94v-0 c225t F8212 panduit standoff RF based remote control robot circuit diagram of incubator D1148 burndy Y35 crimping tool manual
    Text: ELECTRICAL SOLUTIONS A. System Overview Click on the logo above to go to www.panduit.com up to date product information find a local distributor technical information Section Index B1. Cable Ties A. System Overview B2. Cable Accessories B. Bundle B3. Stainless


    Original     		PDF SA-NCCB51 S5 100 B112 MT RELAY CK 66 UL 94V-0 LCD sh 0357 94v-0 c225t F8212 panduit standoff RF based remote control robot circuit diagram of incubator D1148 burndy Y35 crimping tool manual

    TD236

    Abstract: 1SS336
    Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm Small package : SC-59 Low forward voltage : VF 3 = 0.84V (typ.) Fast reverse recovery time : trr = 7ns (typ.) Small total capacitance : CT = 7pF (typ.)


    Original     		PDF 1SS336 SC-59 TD-236MOD TD236 1SS336

    1SS336

    Abstract: No abstract text available
    Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm l Small package : SC-59 l Low forward voltage : VF 3 = 0.84V (typ.) l Fast reverse recovery time : trr = 7ns (typ.) l Small total capacitance : CT = 7pF (typ.)


    Original     		PDF 1SS336 SC-59 1SS336

    1SS336

    Abstract: td236
    Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm z Small package : SC-59 z Low forward voltage : VF 3 = 0.84V (typ.) z Fast reverse recovery time : trr = 7ns (typ.) z Small total capacitance : CT = 7pF (typ.)


    Original     		PDF 1SS336 SC-59 1SS336 td236

    1SS337

    Abstract: No abstract text available
    Text: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm z Small package : SC-59 z Low forward voltage : VF 3 = 0.88V (typ.) z Fast reverse recovery time : trr = 6ns (typ.) z Small total capacitance : CT = 1.6pF (typ.)


    Original     		PDF 1SS337 SC-59 1SS337

    nec k 813

    Abstract: s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284AS
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE33284A NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A nec k 813 s11 diode shottky IEI1207 NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284AS

    1SS348

    Abstract: No abstract text available
    Text: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.56V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS348 SC-59 TD-236MOD 1SS348

    Untitled

    Abstract: No abstract text available
    Text: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.56V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS348 SC-59 TD-236MOD 100mA

    1SS344

    Abstract: No abstract text available
    Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application Unit in mm Low forward voltage : VF 3 = 0.50V (typ.) Fast reverse recovery time : trr = 20ns (typ.) High average forward current : IO = 0.5A (max) Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS344 961001EAA2' 1SS344

    1SS337

    Abstract: 88 diode toshiba
    Text: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm Small package : SC-59 Low forward voltage : VF 3 = 0.88V (typ.) Fast reverse recovery time : trr = 6ns (typ.) Small total capacitance : CT = 1.6pF (typ.)


    Original     		PDF 1SS337 SC-59 TD-236MODtransportation 1SS337 88 diode toshiba

    E112 jfet

    Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
    Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261


    Original     		PDF LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565

    TD236

    Abstract: 1SS348
    Text: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF 3 = 0.56V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS348 SC-59 TD-236MOD TD236 1SS348

    Untitled

    Abstract: No abstract text available
    Text: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit in mm Small package : SC-59 Low forward voltage : VF 3 = 0.88V (typ.) Fast reverse recovery time : trr = 6ns (typ.) Small total capacitance : CT = 1.6pF (typ.)


    Original     		PDF 1SS337 SC-59 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application l Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) l Fast reverse recovery time : trr = 20ns (typ.) l High average forward current : IO = 0.5A (max)


    Original     		PDF 1SS344 TD-236MOD SC-59 100mA 500mA

    1SS344

    Abstract: TD236
    Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application z Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) z Fast reverse recovery time : trr = 20ns (typ.) z High average forward current : IO = 0.5A (max)


    Original     		PDF 1SS344 1SS344 TD236

    1SS348

    Abstract: TD236
    Text: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.56V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS348 SC-59 TD-236MOD 1SS348 TD236

    1SS348

    Abstract: No abstract text available
    Text: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.56V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS348 SC-59 TD-236MOD 1SS348

    1SS344

    Abstract: No abstract text available
    Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application z Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) z Fast reverse recovery time : trr = 20ns (typ.) z High average forward current : IO = 0.5A (max)


    Original     		PDF 1SS344 1SS344

    1SS344

    Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE
    Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application l Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) l Fast reverse recovery time : trr = 20ns (typ.) l High average forward current : IO = 0.5A (max)


    Original     		PDF 1SS344 1SS344 TOSHIBA "ULTRA HIGH SPEED" DIODE

    1SS337

    Abstract: No abstract text available
    Text: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm l Small package : SC-59 l Low forward voltage : VF 3 = 0.88V (typ.) l Fast reverse recovery time : trr = 6ns (typ.) l Small total capacitance : CT = 1.6pF (typ.)


    Original     		PDF 1SS337 SC-59 1SS337

    TD236

    Abstract: No abstract text available
    Text: NOTES: 1, D&E DD NOT INCLUDE MOLD FLASH, 2, MOLD FLASH DR PROTRUSIONS NEIT TD EXCEED ,15mm .006" , 3, CONTROLLING DIMENSION: MILLIMETERS, 4, MEETS JED EC TD236, INCHES MIN 0,031 0,001 0,014 MAX 0,047 0,005 0,022 MIN 0,787 0,025 0,356 MAX 1,194 0,127 0,559


    OCR Scan     		PDF TD236, TD236

    s-mini

    Abstract: SMini
    Text: S -M IN I-2 -3 F 1 A U n iti nn I ft JEDECII'K E I A J □~ K mm$ ftâ Ic S—MINI TD-236MDD SC-59 2-3F1A - A u g .2000


    OCR Scan     		PDF TD-236MDD SC-59 2000S-MINI-2-3F1A s-mini SMini

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    Zener sot marking 162

    Abstract: marking 8D SOT 89 marking 81t marking 81J
    Text: ZENER DIODES 300mW MMBZ5225 THRU MMBZS267 CASE TYPE: TD-236AB (SOT-23) % Nominal Zener voltage)3) at Maximum Zener Zenar impedance*1* Test curant Iz t Type Marking VzV Izr mA MMBZ5225 MMBZ5226 MMBZ5227 18E 8A 8B 3.0 MMBZ5228 MMBZ5229 MMBZ5230 MMBZ5231 MMBZ5232


    OCR Scan     		PDF 300mW) MMBZ5225 MMBZS267 TD-236AB OT-23) Zener sot marking 162 marking 8D SOT 89 marking 81t marking 81J