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    2355Z Price and Stock

    TE Connectivity DTS21H23-55ZB

    DTS21H23-55ZB
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    DigiKey DTS21H23-55ZB Bulk 50
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    Master Electronics DTS21H23-55ZB
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    JRH Electronics 72-433023-55Z

    MIL-DTL-26482 PT Series Recept C
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    DigiKey 72-433023-55Z 1
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    TE Connectivity DTS20H23-55ZC

    DTS20H23-55ZC
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    Mouser Electronics DTS20H23-55ZC
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    TE Connectivity DTS24H23-55ZC

    DTS24H23-55ZC
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    DigiKey DTS24H23-55ZC Bulk 50
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    JRH Electronics 72-464723-55Z

    MIL-DTL-26482 PT Series Recept C
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    DigiKey 72-464723-55Z 1
    • 1 $1475.53
    • 10 $1147.745
    • 100 $382.491
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    2355Z Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M24308/13-1

    Abstract: No abstract text available
    Text: ca_C1-C61.qxd:Layout 1 2/10/11 9:32 AM Page 1 ca_C1-C61.qxd:Layout 1 2/10/11 9:32 AM Page 2 D Subminiature Selector Guide D- Subminiature D Sub C Series D*NM D*H MIL-DTL-24308 Wire Gauge Range AWG AWG 18 - 30 up to AWG 20 AWG 18 - 30 Mating Cycles 500 500


    Original     		PDF C1-C61 MIL-DTL-24308 DAMA-26S-NMB-K47FO DBMA-44P-NMB-K47FO DBMA-44S-NMB-K47FO DCMA-62P-NMB-K47FO DCMA-62S-NMB-K47FO DDMA-78P-NMB-K47FO DDMA-78S-NMB-K47FO M24308/13-1

    DAMMG7X2PJ

    Abstract: M24308/5-38
    Text: ca_C1-C61.qxd:Layout 1 2/10/11 9:32 AM Page 1 ca_C1-C61.qxd:Layout 1 2/10/11 9:32 AM Page 2 D Subminiature Selector Guide D- Subminiature D Sub C Series D*NM D*H MIL-DTL-24308 Wire Gauge Range AWG AWG 18 - 30 up to AWG 20 AWG 18 - 30 Mating Cycles 500 500


    Original     		PDF C1-C61 MIL-DTL-24308 DAMA-26S-NMB-K47FO DBMA-44P-NMB-K47FO DBMA-44S-NMB-K47FO DCMA-62P-NMB-K47FO DCMA-62S-NMB-K47FO DDMA-78P-NMB-K47FO DDMA-78S-NMB-K47FO DAMMG7X2PJ M24308/5-38

    KYS 30 40 diode

    Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
    Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching


    OCR Scan     		PDF 30kHz 1560A 4bflb55b Q000S1S IXSH20N60 IXSM20N60 KYS 30 40 diode 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100

    10N03

    Abstract: 06N03 VU050-12N03 04n03 14n03 VU050-16N03 VU050-08N03 IT5 rectifier 16N03 12n03
    Text: MbE D • 4 h ñ b 25 b 0 0 G 1 25 5 3 H I X Y I X Y S CORP 'T-Z.SiQ^ g m -< n TYYS k_J Data Sheet No. 911004A - November 1991 Three-Phase Diode Rectifier Bridge VU050 FEATURES:_ • Isolated Direct Copper Bond Base Plate


    OCR Scan     		PDF E72873M) 11004A VU050 VU050-04N03 VU050-06N03 VU050-08N03 VU050-10N03 VU050-12N03 VU050-14N03 VU050-16N03 10N03 06N03 04n03 14n03 VU050-16N03 IT5 rectifier 16N03 12n03

    schematic diagram UPS ica

    Abstract: optocoupler TLP 250 TLP250 MOSFET DRIVER application note schematic diagram UPS inverter three phase IXDP630PC TLP250 MOSFET DRIVER TLP250 mosfet gate Driver schematic diagram 48 volt UPS ups high power FET Transistor IXDP630PI
    Text: □IXYS Data Sheet No. 9 1560B October 1991 INVERTER INTERFACE & DIGITAL DEADTIME GENERATOR for 3-PHASE PWM Controls IXDP630 / IXDP631 Features R eplaces 10-12 Standard SSI/MSI Logic Devices Allows a Wide Range of PWM Modulation Strategies Directly Drives High Speed Optocouplers


    OCR Scan     		PDF 91560B IXDP630 IXDP631 P061180 schematic diagram UPS ica optocoupler TLP 250 TLP250 MOSFET DRIVER application note schematic diagram UPS inverter three phase IXDP630PC TLP250 MOSFET DRIVER TLP250 mosfet gate Driver schematic diagram 48 volt UPS ups high power FET Transistor IXDP630PI

    IXDP630 application note

    Abstract: IXDP630
    Text: □IXYS Data Sheet No. 91560B October 1991 INVERTER INTERFACE & DIGITAL DEADTIME GENERATOR for 3-PHASE PWM Controls IXDP630 / IXDP631 Features 5 Volt H C M O S Logic Im plem entation M aintains Low P o w er a t High S p ee d R e p la c e s Devices 1 0 - 1 2 S ta n d a r d S S I/M S I Logic


    OCR Scan     		PDF 91560B IXDP630 IXDP631 IXDP630 application note

    2355ZankerRd

    Abstract: No abstract text available
    Text: IflE D I X Y S CORP 4b ö b 2 2 b OOOOb'n 1 ~T-2P\ -<2> □IXYS ADVANCE TECHNICAL DATA SHEET* March 1989 PART NUMBER Data Sheet No. 3407A MOSIGBT with Anti-Parallel Rectifier IXGH20N100U1 FEATURES: • High Voltage M OSIGBT and Anti-Parallel Rectifier in One Package


    OCR Scan     		PDF IXGH20N100U1 O-247 384928IX 2355ZankerRd

    Untitled

    Abstract: No abstract text available
    Text: □ I X Y S orr li 3 005689 IXMS150 HIGH PERFORMANCE DUAL PWM CONTROLLER PRELIMINARY INFORMATION FEATURES • Two complete, synchronous pulse width modulators in one CMOS monolithic IC. • Under-voltage lockout assures proper behavior on power-ip and power-down.


    OCR Scan     		PDF IXMS150 20kHz 400kHz. 100kHz, 100kHz 20-100kHz 10kohms, 047uF, 30ohms, 1500pF,

    IXGH20N60U1

    Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
    Text: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package


    OCR Scan     		PDF 1750A 30KHz T-39-15 IXGH10N60U1 IXGH10N60AU1 IXGH20N60U1 IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB

    1XFH12n100

    Abstract: transistor 13n80
    Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure


    OCR Scan     		PDF 4bflb22b 1532A 200ns) IXFH12N100 IXFH10N100 IXFM12N100 IXFM10N100 1XFH12n100 transistor 13n80

    1xys

    Abstract: D-6840 D6840 VB035-08N04 VB024-08N04 VB035-04N04 VB010 VB015-10N04 VB035 VB024-04N04
    Text: 4b E D • I X Y S Mbflb25b D00127S 1 «IXY CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Sheet No. 911014A November 1991 VB006 VB015 VB035 Single-Phase Diode Rectifier Bridge VB010 VB024 • C om pact Housing


    OCR Scan     		PDF Mbflb25b D00127S 11014A VB006 VB015 VB035 ---N02 VB015-- VB024-- VB010 1xys D-6840 D6840 VB035-08N04 VB024-08N04 VB035-04N04 VB015-10N04 VB035 VB024-04N04

    40n60 transistor

    Abstract: 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60
    Text: MbE D • Mb S b S E b OO O O S T M T «IXY I X V S CORP T □IX Y S I V I S Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features • • • Guaranteed Short Circuit Capability SCSOA Optimized for 60Hz to 30kHz Switching


    OCR Scan     		PDF 1560A 30kHz IXSH20N60 IXSM20N60 Tj-125 40n60 transistor 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60