TPCS8213
Abstract: No abstract text available
Text: TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ TPCS8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)
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TPCS8213
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S8214
Abstract: TPCS8214
Text: TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCS8214 Lithium Ion Battery Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 10S (typ.)
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TPCS8214
S8214
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S8302
Abstract: TPCS8302
Text: TPCS8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPCS8302 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)
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S8302
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s8208
Abstract: TPCS8208
Text: TPCS8208 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIII TPCS8208 ○ リチウムイオン 2 次電池用 • 単位: mm 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 13 mΩ (標準)
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TPCS8208
s8208
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s8211
Abstract: TPCS8211
Text: TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8211 Lithium Ion Battery Applications Note Book PC Portable Machines and Tools Unit: mm • Has a small footprint. • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)
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TPCS8211
s8211
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s8208
Abstract: TPCS8208
Text: TPCS8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8208 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)
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TPCS8208
s8208
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TPCS8201
Abstract: S8201
Text: TPCS8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS II TPCS8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)
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a3180
Abstract: TPCS8303 TPCS83
Text: TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCS8303 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)
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TPCS8303
a3180
TPCS8303
TPCS83
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s8204
Abstract: TPCS8204 S-8204
Text: TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8204 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.)
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TPCS8204
s8204
TPCS8204
S-8204
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S8204
Abstract: S-8204 TPCS8204
Text: TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8204 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.)
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TPCS8204
S8204
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s8211
Abstract: TPCS8211
Text: TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8211 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)
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s8211
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s8210
Abstract: A/s8210
Text: TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8210 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.2 S (typ.)
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TPCS8210
s8210
A/s8210
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3B marking
Abstract: No abstract text available
Text: TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCS8303 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Machines and Tools • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)
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TPCS8303
3B marking
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s8212
Abstract: No abstract text available
Text: TPCS8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8212 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.)
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TPCS8212
s8212
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s8210
Abstract: No abstract text available
Text: TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8210 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.2 S (typ.)
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TPCS8210
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TPCS8213
Abstract: No abstract text available
Text: TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ TPCS8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)
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TPCS8213
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S8210
Abstract: TPCS8210
Text: TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8210 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) · High forward transfer admittance: |Yfs| = 9.2 S (typ.)
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TPCS8210
S8210
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s8211
Abstract: TPCS8211 S-8211
Text: TPCS8211 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIII TPCS8211 ○ リチウムイオン 2 次電池用 ○ ノートブック PC 用 ○ 携帯電子機器用 • 単位: mm 小型薄型で実装面積が小さい。
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TPCS8211
s8211
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s8212
Abstract: S-8212 TPCS8212
Text: TPCS8212 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIII TPCS8212 ○ リチウムイオン 2 次電池用 • 単位: mm 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 16 mΩ (標準)
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TPCS8212
s8212
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S8302
Abstract: 3B MARKING
Text: TPCS8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPCS8302 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)
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TPCS8302
S8302
3B MARKING
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TPCS8211
Abstract: S8211 S-8211A S-8211
Text: TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8211 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)
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TPCS8211
TPCS8211
S8211
S-8211A
S-8211
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S8209
Abstract: 357 MARKING
Text: TPCS8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8209 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.)
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TPCS8209
S8209
357 MARKING
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Untitled
Abstract: No abstract text available
Text: TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS II TPCS8205 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Low drain-source ON resistance: RDS (ON) = 30 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.)
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TPCS8213
Abstract: S8213
Text: TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ TPCS8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • • Low drain-source ON-resistance: R DS (ON) = 8.4 mΩ (typ.) High forward transfer admittance: |Yfs | = 13 S (typ.)
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TPCS8213
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S8213
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