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    S8213 Search Results

    S8213 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TPS82130SILT Texas Instruments 3-A 17V Step-down Converter Module with Integrated Inductor 8-uSiP -40 to 125 Visit Texas Instruments Buy
    TPS82130SILR Texas Instruments 3-A 17V Step-down Converter Module with Integrated Inductor 8-uSiP -40 to 125 Visit Texas Instruments Buy
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    S8213 Price and Stock

    Texas Instruments TPS82130EVM-720

    EVAL BOARD FOR TPS82130
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    DigiKey TPS82130EVM-720 Box 4 1
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    Texas Instruments TPS82130SILT

    DC DC CONVERTER 0.9-5V
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    DigiKey TPS82130SILT Cut Tape 1
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    TPS82130SILT Digi-Reel 1
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    TPS82130SILT Reel 250
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    Newark TPS82130SILT Cut Tape 408 1
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    Bristol Electronics TPS82130SILT 600
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    Chip 1 Exchange TPS82130SILT 28,509
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    Win Source Electronics TPS82130SILT 19,040
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    ABLIC Inc. S-8213AAJ-I6T1U

    IC BATT PROT LI-ION 2-3CL SNT-6A
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    DigiKey S-8213AAJ-I6T1U Reel 5,000
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    ABLIC Inc. S-8213AAD-I6T1U

    IC BATT PROT LI-ION 2-3CL SNT-6A
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    Mouser Electronics S-8213AAD-I6T1U
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    ABLIC Inc. S-8213AAR-I6T1U

    IC BATT PROT LI-ION 2-3CL SNT-6A
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    DigiKey S-8213AAR-I6T1U Reel 5,000
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    S8213 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S821/328 NKK Switches Switches - Toggle Switches - SWITCH TOGGLE DPST 30A 125V Original PDF
    S-8213AAB-I6T1U ABLIC Inc. Integrated Circuits (ICs) - PMIC - Battery Management - IC BATT PROTECTION Original PDF
    S-8213AAB-M6T1U ABLIC Inc. Integrated Circuits (ICs) - PMIC - Battery Management - IC BATT PROTECTION Original PDF
    S-8213AAC-I6T1U ABLIC Inc. Integrated Circuits (ICs) - PMIC - Battery Management - IC BATT PROTECTION Original PDF
    S-8213AAC-M6T1U ABLIC Inc. Integrated Circuits (ICs) - PMIC - Battery Management - IC BATT PROTECTION Original PDF
    S-8213AAD-I6T1U ABLIC Inc. Integrated Circuits (ICs) - PMIC - Battery Management - IC BATT PROTECTION Original PDF
    S-8213AAD-M6T1U ABLIC Inc. Integrated Circuits (ICs) - PMIC - Battery Management - IC BATT PROTECTION Original PDF
    S-8213AAE-I6T1U ABLIC Inc. Integrated Circuits (ICs) - PMIC - Battery Management - IC BATT PROTECTION Original PDF
    S-8213AAE-M6T1U ABLIC Inc. Integrated Circuits (ICs) - PMIC - Battery Management - IC BATT PROTECTION Original PDF
    S-8213AAF-I6T1U ABLIC Inc. Integrated Circuits (ICs) - PMIC - Battery Management - IC BATT PROTECTION Original PDF
    S-8213AAF-M6T1U ABLIC Inc. Integrated Circuits (ICs) - PMIC - Battery Management - IC BATT PROTECTION Original PDF
    S-8213AAG-I6T1U ABLIC Inc. Integrated Circuits (ICs) - PMIC - Battery Management - IC BATT PROTECTION Original PDF
    S-8213AAG-M6T1U ABLIC Inc. Integrated Circuits (ICs) - PMIC - Battery Management - IC BATT PROTECTION Original PDF
    S-8213AAH-I6T1U ABLIC Inc. Integrated Circuits (ICs) - PMIC - Battery Management - IC BATT PROTECTION Original PDF
    S-8213AAH-M6T1U ABLIC Inc. Integrated Circuits (ICs) - PMIC - Battery Management - IC BATT PROTECTION Original PDF
    S-8213AAI-I6T1U ABLIC Inc. Integrated Circuits (ICs) - PMIC - Battery Management - IC BATT PROTECTION Original PDF
    S-8213AAI-M6T1U ABLIC Inc. Integrated Circuits (ICs) - PMIC - Battery Management - IC BATT PROTECTION Original PDF
    S-8213AAJ-I6T1U ABLIC Inc. Integrated Circuits (ICs) - PMIC - Battery Management - IC BATT PROTECTION Original PDF
    S-8213AAJ-M6T1U ABLIC Inc. Integrated Circuits (ICs) - PMIC - Battery Management - IC BATT PROTECTION Original PDF
    S-8213AAK-I6T1U ABLIC Inc. Integrated Circuits (ICs) - PMIC - Battery Management - IC BATT PROTECTION Original PDF

    S8213 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TPCS8213

    Abstract: No abstract text available
    Text: S8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ S8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)


    Original
    TPCS8213 TPCS8213 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUD23N06-31 Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SUD23N06-31 18-Jul-08 PDF

    SiR466DP

    Abstract: SiR466
    Text: SPICE Device Model SiR466DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SiR466DP 18-Jul-08 SiR466 PDF

    sir472

    Abstract: sir472dp vishay 138
    Text: SPICE Device Model SiR472DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SiR472DP 18-Jul-08 sir472 vishay 138 PDF

    SiR468DP

    Abstract: No abstract text available
    Text: SPICE Device Model SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SiR468DP S-82134 15-Sep-08 PDF

    Dexerials

    Abstract: S-8213AAB-I6T1U S-8213 S-8213AAH-I6T1U S-8213AAC-I6T1U I6T1U
    Text: S-8213 Series www.sii-ic.com BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK SECONDARY PROTECTION Rev.1.1_00 Seiko Instruments Inc., 2012-2013 The S-8213 Series is used for secondary protection of lithium-ion rechargeable batteries, and incorporates a high-accuracy


    Original
    S-8213 Dexerials S-8213AAB-I6T1U S-8213AAH-I6T1U S-8213AAC-I6T1U I6T1U PDF

    TPCS8213

    Abstract: No abstract text available
    Text: S8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ S8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)


    Original
    TPCS8213 TPCS8213 PDF

    sony chemical fuse

    Abstract: battery protection ic for 2-serial
    Text: S-8213 Series www.sii-ic.com BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK SECONDARY PROTECTION Rev.1.0_00 Seiko Instruments Inc., 2012 The S-8213 Series is used for secondary protection of lithium-ion rechargeable batteries, and incorporates a high-accuracy


    Original
    S-8213 sony chemical fuse battery protection ic for 2-serial PDF

    handbook of shipboard electromagnetic shielding practices

    Abstract: ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915
    Text: S9407-AB-HBK-010 Revision 2 HANDBOOK OF SHIPBOARD ELECTROMAGNETIC SHIELDING PRACTICES This document supersedes S9407-AB-HBK-010, Revision 1 date published 30 September 1989 APPROVED FOR PUBLIC RELEASE; DISTRIBUTION IS UNLIMITED Published by Direction of Commander, Naval Sea Systems Command


    Original
    S9407-AB-HBK-010 S9407-AB-HBK-010, S9407-AB-HBK-010 03Z44, 05H31, 08K/CHABAY) PMS303A41, handbook of shipboard electromagnetic shielding practices ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915 PDF

    SiR496DP

    Abstract: No abstract text available
    Text: SPICE Device Model SiR496DP Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SiR496DP 18-Jul-08 PDF

    S-82130

    Abstract: mosfet SPICE MODEL SiA534DJ
    Text: SPICE Device Model SiA534DJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SiA534DJ 18-Jul-08 S-82130 mosfet SPICE MODEL PDF

    TPCS8213

    Abstract: S8213
    Text: S8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ S8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • • Low drain-source ON-resistance: R DS (ON) = 8.4 mΩ (typ.) High forward transfer admittance: |Yfs | = 13 S (typ.)


    Original
    TPCS8213 TPCS8213 S8213 PDF

    SiR472DP

    Abstract: 82137
    Text: SPICE Device Model SiR472DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SiR472DP S-82137 15-Sep-08 82137 PDF

    SiR466DP

    Abstract: mosfet SPICE MODEL S-82135 64330
    Text: SPICE Device Model SiR466DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SiR466DP S-82135 15-Sep-08 mosfet SPICE MODEL 64330 PDF

    S8213

    Abstract: TPCS8213
    Text: S8213 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ S8213 ○ リチウムイオン 2 次電池用 • 単位: mm 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 8.4 mΩ (標準)


    Original
    TPCS8213 20070701-JA S8213 TPCS8213 PDF

    sir464

    Abstract: SiR464DP mosfet SPICE MODEL
    Text: SPICE Device Model SiR464DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SiR464DP S-82132 15-Sep-08 sir464 mosfet SPICE MODEL PDF

    MDM 6600

    Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
    Text: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1


    Original
    9800-OERF-007 9800-OERF-005 MDM 6600 mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918 PDF

    sir468

    Abstract: No abstract text available
    Text: SPICE Device Model SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SiR468DP 18-Jul-08 sir468 PDF

    S-82136

    Abstract: SiR496DP mosfet SPICE MODEL spice model AN
    Text: SPICE Device Model SiR496DP Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SiR496DP S-82136 15-Sep-08 mosfet SPICE MODEL spice model AN PDF

    SiR464DP

    Abstract: No abstract text available
    Text: SPICE Device Model SiR464DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SiR464DP 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiB452DK Vishay Siliconix N-Channel 190-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SiB452DK 18-Jul-08 PDF

    56 pF CH

    Abstract: S-82130
    Text: SPICE Device Model SiA534DJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SiA534DJ S-82130-Rev. 15-Sep-08 56 pF CH S-82130 PDF

    SiR462DP

    Abstract: sir462 S-82133
    Text: SPICE Device Model SiR462DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SiR462DP S-82133 15-Sep-08 sir462 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUD23N06-31 Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SUD23N06-31 S-82138 15-Sep-08 PDF