VN2410M
Abstract: VN2406D VN2406L VN2406M VN2410L TN2410L VN2410* mosfet tn2410 siliconix to-18
Text: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V
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TN2410L,
VN2406/2410
TN2410L
VN2406D
VN2410L
VN2406L
VN2410M
VN2406M
VN2406D
VN2410M
VN2406M
VN2410L
TN2410L
VN2410* mosfet
tn2410
siliconix to-18
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Untitled
Abstract: No abstract text available
Text: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V
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TN2410L,
VN2406/2410
TN2410L
VN2406D
VN2410L
VN2406L
VN2410M
VN2406M
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One-chip telephone IC
Abstract: telephone line voice amplifier Voice to e1 converter circuit U 4076 One-chip telephone cordless IC VN2410* mosfet BFP67 slc96 remote terminal E1 PCM encoder V30 CPU
Text: TEMIC Semiconductors Communication Segment Digital Networks Wireless Communication Wired Communication Communication We’ve been supporting advances in communications industry for decades. Today, we continue to offer the best combination of applications knowledge and leading-edge solutions required by the
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29C93A
102/V
V25bis)
PQFP44
29C93A
29C921
80C51
One-chip telephone IC
telephone line voice amplifier
Voice to e1 converter circuit
U 4076
One-chip telephone cordless IC
VN2410* mosfet
BFP67
slc96 remote terminal
E1 PCM encoder
V30 CPU
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Untitled
Abstract: No abstract text available
Text: STP6621 P Channel Enhancement Mode MOSFET -18.0A SCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STP6621
STP6621
-60V/-10
-60V/-8
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Untitled
Abstract: No abstract text available
Text: STP6623 P Channel Enhancement Mode MOSFET -18.0A SCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STP6623
STP6621
-60V/-10
-60V/-8
STP6623
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BFC44
Abstract: W52A
Text: SEME BFC44 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69
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BFC44
BFC44
W52A
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APT5012
Abstract: No abstract text available
Text: Standard Power MOSFETs Power MOS V MOSFET Technology. is a patented selfaligned interdigitated open cell structure with improved switching and RDS ON advantages over our previous MOS IV® generation and over industry standard closed cell devices. Feature
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APT5019HVR
APT5026HVR
APT4014HVR
APT4018HVR
O-258
APT20M42HVR
APT1001R1AVR
APT6032AVR
APT6035AVR
APT5012
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Si4660DY
Abstract: No abstract text available
Text: SPICE Device Model Si4660DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4660DY
18-Jul-08
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SML50EUZ12LC
Abstract: No abstract text available
Text: SML50EUZ12LC Enhanced Ultrafast Recovery Diode 1200 Volt, 2 X 50 Amp Back of Case Cathode SML 50EUZ12LC 1 - Anode 1 TECHNOLOGY The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with
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SML50EUZ12LC
50EUZ12LC
SML50EUZ12LC
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MRF8S23120HR3
Abstract: AN1955 C3225JB2A334KT j162 MRF8S23120H C5750X7R1H106KT
Text: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to
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MRF8S23120H
MRF8S23120HR3
MRF8S23120HSR3
MRF8S23120HR3
AN1955
C3225JB2A334KT
j162
MRF8S23120H
C5750X7R1H106KT
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to
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MRF8S23120H
MRF8S23120HR3
MRF8S23120HSR3
MRF8S23120HR3
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74881
Abstract: S71394 SUD50NP04-48 74*881
Text: SPICE Device Model SUD50NP04-48 Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50NP04-48
18-Jul-08
74881
S71394
SUD50NP04-48
74*881
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SiR880DP
Abstract: v2410
Text: SPICE Device Model SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR880DP
18-Jul-08
v2410
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Untitled
Abstract: No abstract text available
Text: T em ic TN2410L, VN2406/2410 Series Semiconductors N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number n S on) M a x (Q ) V GS(th) (V) Id (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D
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TN2410L,
VN2406/2410
TN2410L
VN2406D
VN2410L
VN2406L
VN2410M
VN2406M
VN2406D
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PIR CONTROLLER LP 0001
Abstract: No abstract text available
Text: UCC19411/2/3 UCC29411/2/3 UCC39411/2/3 TYPICAL CHARACTERISTICS UNITRODE CORPORATION 7 CONTINENTAL BLVD. • MERRIMACK, NH 03054 TEL. 603 424-2410 • FAX (603) 424-3460 7-65 UCC29421/2 UCC39421/2 CONNECTION DIAGRAMS ABSOLUTE MAXIMUM RATINGS Supply Voltage (VIN, VOUT,VPUMP). 8V
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UCC19411/2/3
UCC29411/2/3
UCC39411/2/3
UCC29421/2
UCC39421/2
PIR CONTROLLER LP 0001
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sml20m40bfn
Abstract: L8030
Text: im i^i llll Sem elab Power M anagem ent Division 4 GENERATION HERMETIC POWER MOSFETS Package b v dss R d s ON PD W atts Q g(n C ) O hm s lD(Cont.) Am ps Ciss(pF) Volts (Typ) (Typ) 0.260 36.0 830 11560 454 SM L10026DFN 0.500 22.0 595 5560 227 SM L10050CFN
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L10026DFN
L10050CFN
SML1001R1AN
L1001R1HN
SML1001
L1002RAN
L1002RCN
L1002R4AN
L1002R4CN
sml20m40bfn
L8030
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TO-264AA
Abstract: bfc60 BFC51 SOT227 BFC24
Text: lili Sem elab Power M anagem ent Division 4 GENERATION PLASTIC POWER MOSFETS Part Package Number Type 255 BFC10 SOT227 242 BFC11 SOT227 5410 232 BFC12 SOT227 5350 228 BFC13 SOT227 BFC14 224 520 5325 56.0 IN DEVELOPMENT, ULTRA LOW RDS ON MOSFETs in SOT227 Package
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OT227
BFC10
BFC11
BFC12
BFC13
TO-264AA
bfc60
BFC51
SOT227
BFC24
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apt5040an
Abstract: APT1001R1AN APT4020AN apt6040an APT5025AN
Text: APT HERMETIC MOSFET PRODUCTS Ciss pF Typ Volts Rds(ON) Ohms lD(Cont.) Amps 600 0.090 63.0 830 11270 440 APT60M90BFN 500 0.060 78.0 830 11176 420 APT50M 60BFN 400 0.042 95.0 830 11176 476 APT40M42BFN b v dss Pp Watts Qg(nC) Typ APT Part No. New Product Comments
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APT60M90BFN
APT50M
60BFN
APT40M42BFN
APT20M
21BFN
40BFN
APT100MJCFN
APT8030CFN
apt5040an
APT1001R1AN
APT4020AN
apt6040an
APT5025AN
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APT1004RGN
Abstract: No abstract text available
Text: APT HERMETIC MOSFET PRODUCTS BV DSS Volts 1000 800 600 500 4UC 1000 800 R ds o n Ohms lD(Cont.) CiSS(pF) Qg(nC) A PT New Product Package Am ps Watts Typ Typ Part No. Comments Style 1.100 1.300 9.5 250 2460 90 APT1001R1HN 90 250 2460 90 APT1001R3HN 0.750
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APT5011AFN
APT40M
80AFN
APT1004RGN
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APT*1002R4BN
Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Text: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0
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O-247
APT1001RBN
APT1001R1BN
APT1001RBNR
APT1001R1BNR
APT1001R3BN
APT1001R6BN
APT1002RBN
APT1002R4BN
APT1002RBNR
APT*1002R4BN
APT5040BNF
FREDFET
APT802R4BN
APT5020BNR
APT5085BN
APT5020BNF
APT5025BN
APT6040BNR
APT5085BNF
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APT802R4KN
Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
Text: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN
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APT4016BN
APT4018BN
APT41I20BN
APT4025BN
APT4030BN
APT4040BN
APT5020BN
APT5022BN
APT5025BN
APT5040BN
APT802R4KN
APT6018LNR
APT6060BN
mosfet selector guide
APT-6018
APT10M25bnfr
k 3530 MOSFET
1r3b
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os805
Abstract: sml8075hn
Text: MilitaryAerospace Division Please note th a t o u r 4th G en eration p o w er MOSFETi are currently available in Eu ro p e only. Military-Aerospace Division PowerMOS IV hermetic M O SFETs T h e latest and most efficient M O S F E T family • on the market, the P o w e r M O S I V IVI range is in
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O-258
O-254
O-254
SML6060CN
SML6Q70AN
SML6070CN
SML60IR3CN
SML60IR6CN
os805
sml8075hn
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BFC44
Abstract: 140-A11 7a2 diode
Text: lili IF F ! mi BFC44 SEME LAB 4TH GENERATION MOSFET TO 247-AD Package Outline. Dimensions in mm inches 4 69 (0 1151 S 31 <0 209) 1 40 (0 056) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15 40 (0 «101 VDSS ID(cont) 0 40 (0 018) 1 01 (0 040^ I Terminal 1
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BFC44
O247-AD
MIL-STD-750
1331fi7
DD01S4fi
BFC44
140-A11
7a2 diode
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FS5UM-14A
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS5UM-14A HIGH-SPEED SWITCHING USE FS5UM-14A • VOSS .7 0 0 V • rDS ON (MAX) .2 .6 Í2
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FS5UM-14A
FS5UM-14A
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