Untitled
Abstract: No abstract text available
Text: IDT79RV3081-25MJ 1/3 IL08 C-MOS RISC CONTROLLER WITH FLOATING POINT ACCELERATOR VDD (+5 V) GND GND VDD (+5 V) GND VDD (+5 V) VDD (+5 V) GND GND VDD (+5 V) GND VDD (+5 V) NC GND VDD (+5 V) GND VDD (+5 V) GND VDD (+5 V) 74 73 72 71 70 69 68 67 66 65 64 63
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IDT79RV3081-25MJ
R3051
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Untitled
Abstract: No abstract text available
Text: * IDT79R3081-25MJ 1/3 IL00 C-MOS RISC CPU 1 GND VDD(+5V) 80 75 GND 5 VDD(+5V) 10 GND VDD(+5V) —TOP VIEW— GND VDD(+5V) 15 70 VDD(+5V) GND 20 GND VDD(+5V) 65 25 60 GND VDD(+5V) VDD(+5V) 35 PIN I/O No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
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IDT79R3081-25MJ
32X32)
R3051
16KB/8KB)
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NTE2954
Abstract: No abstract text available
Text: NTE2954 MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Low Gate Charge: 147nC Typ D Low Reverse Transfer Capacitance: 300pF Typ D Fast Switching D 100% Avalanche Tested D Imporved dv/dt Capability Absolute Maximum Ratings: TC = +25°C unless otherwise specified
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NTE2954
147nC
300pF
NTE2954
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FUR460
Abstract: GUR460 UF4007 SMD Spice UF5408 MUR Motorola fast diode UF5400 "spice model" uf5408 SMD diode SMA UF4007 GENERAL SEMICONDUCTOR SMD DIODES mur 460 data
Text: N E GUR440 & GUR460 MUR440 & MUR460 Ultrafast Axial-Leaded Rectifiers W P R O New Four Ampere Axial Introduction GUR460 Features Cross Reference GUR460 Applications Ultrafast Recovery FER Selector Chart Spice Model Parameters D U To view the datasheets please click here ➔
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GUR440
GUR460
MUR440
MUR460
GUR460
GUR440,
GUR460,
MUR440
MUR460.
FUR460
UF4007 SMD
Spice UF5408
MUR Motorola fast diode
UF5400 "spice model"
uf5408 SMD diode
SMA UF4007
GENERAL SEMICONDUCTOR SMD DIODES
mur 460 data
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g7n60
Abstract: g7n60a
Text: HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These
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HGT1S7N60A4S9A,
HGTG7N60A4
HGTP7N60A4
HGTG7N60A4
150oC.
100kHz
200kHz
125oC
g7n60
g7n60a
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G60T120
Abstract: IGW60T120 IGBT 1200V 60A PG-TO-247-3
Text: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • C Best in class TO247 Short circuit withstand time – 10 s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications
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IGW60T120
G60T120
IGW60T120
IGBT 1200V 60A
PG-TO-247-3
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2SD1325
Abstract: 25mJ
Text: Power Transistors 2SD1325 Silicon NPN triple diffusion planar type Darlington For midium speed power switching Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 60±10 V Collector to emitter voltage
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2SD1325
2SD1325
25mJ
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SGW25N120
Abstract: IGBT 1200V 60A
Text: Preliminary SGW25N120 Fast S-IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution
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SGW25N120
O-247AC
Q67040-S4277
Mar-00
SGW25N120
IGBT 1200V 60A
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sgw25n120
Abstract: No abstract text available
Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
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SGW25N120
SGW25N120
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Untitled
Abstract: No abstract text available
Text: Target IGW60T120 TrenchStoP Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • • Best in class TO247 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers :
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IGW60T120
O-247AC
Q67040-S4521
Feb-02
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k25n120
Abstract: No abstract text available
Text: SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode • 40lower Eoff compared to previous generation Short circuit withstand time – 10 s Designed for: - Motor controls - Inverter G - SMPS NPT-Technology offers:
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SKW25N120
40lower
PG-TO-247-3
K25N120
k25n120
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1325 Silicon NPN triple diffusion planar type Darlington For midium speed power switching Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 φ3.1±0.1 ● ● Parameter Symbol Ratings Unit Collector to base voltage VCBO 60±10 V Collector to emitter voltage
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2SD1325
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g25n120
Abstract: SGW25N120 PG-TO-247-3-21 G25N120 TSC
Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
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SGW25N120
PG-TO-247-3-1
O-247AC)
G25N120
PG-TO-247-3-21
SGW25N120
PG-TO-247-3-21
G25N120 TSC
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igbt sgw25n120
Abstract: 50S INFINEON SGW25N120 ir igbt 1200V 40A IGBT 1200V 60A igbt to247 PG-TO-247-3 igbt 1200V 40A short circuit
Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 s • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
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SGW25N120
PG-TO-247-3
SGW25N120
igbt sgw25n120
50S INFINEON
ir igbt 1200V 40A
IGBT 1200V 60A
igbt to247
PG-TO-247-3
igbt 1200V 40A short circuit
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SKW25N120
Abstract: IGBT 200A 1200V
Text: SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:
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SKW25N120
40lower
P-TO-247-3-1
O-247AC)
O-247AC
Q67040-S4282
Jul-02
SKW25N120
IGBT 200A 1200V
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PowerDI-123
Abstract: SBR3U30P1 PowerDI123 RSX101M-30 PMDU SBR2U30P1 336V RB160M 16kv 5ma diode Schottky Diode 30V 1A SOD diodes toshiba
Text: New Product Announcement January 17, 2007 Announcing Industry-First 3 Ampere High Performance SBR Technology in PowerDITM123 Package SBR® Super Barrier Rectifier Package Cross Section Diodes, Inc. patented interlocking clip construction and a flat lead frame heat-sink solder pad result in higher power
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PowerDITM123
SBR3U30P1,
SBR2U30P1,
SBR2A30P1,
SBR2A40P1
SBR3U30P1)
PowerDITM123
PowerDI-123
SBR3U30P1
PowerDI123
RSX101M-30 PMDU
SBR2U30P1
336V
RB160M
16kv 5ma diode
Schottky Diode 30V 1A SOD
diodes toshiba
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G60T120
Abstract: PG-TO-247-3-21
Text: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • C Best in class TO247 Short circuit withstand time – 10 s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications
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Original
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IGW60T120
G60T120
PG-TO-247-3-21
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G60T120
Abstract: No abstract text available
Text: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • • • • • • • • • • Best in class TO247 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications
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IGW60T120
15stances.
G60T120
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K25N120
Abstract: No abstract text available
Text: SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter G - SMPS • NPT-Technology offers:
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SKW25N120
40lower
SKW25N120
K25N120
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transistor TIP 42
Abstract: TIP 42 transistor Tl 5153 transistor tip 3055 transistor tip 5530 B0738 TIP 122 transistor TIP110 TIP111 TIP 3055 transistor
Text: TYPES TIP115, TIP116, TIP117 P-N-P DARLINGTON-CONNECTED SILICON POW ER TR A N SISTO R S D ESIG NED IFOR C O M P L E M E N T A R Y USE W ITH T IP 1 10, T IP 1 11, T IP 112 • High SOA Capability, 40 V and 1.25 A 50 W at 25°C Case Temperature Min hpE of 500 at 4 V , 2 A
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TIP115,
TIP116,
TIP117
TIP110,
TIP111,
TIP112
25-mJ
TIP115
TIP116
transistor TIP 42
TIP 42 transistor
Tl 5153
transistor tip 3055
transistor tip 5530
B0738
TIP 122 transistor
TIP110
TIP111
TIP 3055 transistor
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7N60a4
Abstract: LG 631 IC TA49331 LG 631 HGTD7N60A4S HGTD7N60A4S9A HGTG7N60A4 HGTP7N60A4 LD26 transistor st make 803
Text: HGTD7N60A4S, HGTG7N60A4, HGTP7N60A4 in t e r r ii J a n u a ry . m D ata S h eet File N u m b er i 4826 Features 600V, SMPS Series N-Channel IGBT The HGTD7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These
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OCR Scan
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HGTD7N60A4S,
HGTG7N60A4,
HGTP7N60A4
HGTG7N60A4
HGTP7N60A4
TA49331.
7N60a4
LG 631 IC
TA49331
LG 631
HGTD7N60A4S
HGTD7N60A4S9A
LD26
transistor st make 803
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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Untitled
Abstract: No abstract text available
Text: INTRODUCTION PLASTIC ENCAPSULATED TRAN SISTO RS TRI ACS AND THYRISTO RS This catalogue provides technical descriptions and specifications on Plastic Power Semiconductors manufactured by Texas Instruments. From the earliest days o f transistors Sem iconductor C ircuit Designers have
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T1P116
Abstract: TIP112 TIP115 TIP117
Text: PANASONIC INDL/ELEK -CIO ^•=132052 D01D441 t, 1SE D Darlington Silicon PNP Power Transistors T-33-3Í TO-220 Package Absolute Maximum Ratings Ta=25°C Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current
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O-220
001Q441
T-33-3
Ta-25Â
TIP115
TIP112
i32fl52
0D1D442
100x100
T1P116
TIP112
TIP115
TIP117
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