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    G7N60 Search Results

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    G7N60 Price and Stock

    onsemi HGTG7N60A4

    IGBT 600V 34A TO-247-3
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    DigiKey HGTG7N60A4 Tube 150
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    Win Source Electronics HGTG7N60A4 3,540
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    FLIP ELECTRONICS HGTG7N60A4D

    IGBT 600V 34A TO-247-3
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    DigiKey HGTG7N60A4D Tube 400
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    onsemi HGTG7N60A4D

    IGBT 600V 34A TO-247-3
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    DigiKey HGTG7N60A4D Tube
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    Avnet Americas HGTG7N60A4D Tube 439
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    Newark HGTG7N60A4D Bulk 120
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    Flip Electronics HGTG7N60A4D 900
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    Intersil Corporation G7N60A4D

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    Bristol Electronics G7N60A4D 546 2
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    Intersil Corporation HGTG7N60A4D

    INSULATED GATE BIPOLAR TRANSISTOR, 34A I(C), 600V V(BR)CES, N-CHANNEL, TO-247 (Also Known As: G7N60A4D)
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    Quest Components HGTG7N60A4D 436
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    Find more G7N60 price and stock on Findchips.com

    G7N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    g7n60b3d

    Abstract: igbt g7n60b3d G7N60B3 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 2MH22 150OC
    Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) g7n60b3d igbt g7n60b3d G7N60B3 HGT1S7N60B3DS9A RHRD660 2MH22 PDF

    g7n60

    Abstract: g7n60a
    Text: HGT1S7N60A4S9A, G7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, G7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 HGTG7N60A4 150oC. 100kHz 200kHz 125oC g7n60 g7n60a PDF

    G7N60B3

    Abstract: G7N60B HGT1S7N60B3S HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 RHRD660 G7N60 Igbts guide TA49190
    Text: HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Data Sheet January 2002 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S 150oC. HGTP7N60B3 G7N60B3 G7N60B HGTD7N60B3S HGTD7N60B3S9A RHRD660 G7N60 Igbts guide TA49190 PDF

    Untitled

    Abstract: No abstract text available
    Text: HGT1S7N60B3DS Data Sheet 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGT1S7N60B3DS is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		HGT1S7N60B3DS HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) PDF

    g7n60

    Abstract: G7N60B3
    Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) g7n60 G7N60B3 PDF

    G7N60

    Abstract: G7N60C3D zener diode gem HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121
    Text: HGTP7N60C3D, HGT1S7N60C3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTP7N60C3D, HGT1S7N60C3DS HGTP7N60C3D HGT1S7N60C3DS 150oC. TA49115. TA49057. G7N60 G7N60C3D zener diode gem HGT1S7N60C3DS9A TA49121 PDF

    G7N60C3

    Abstract: g7n60c HGTD7N60C3S9A HGTD7N60C3S HGTP7N60C3 LD26 RHRD660
    Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTD7N60C3S, HGTP7N60C3 HGTD7N60C3S HGTP7N60C3 150oC. G7N60C3 g7n60c HGTD7N60C3S9A LD26 RHRD660 PDF

    8508 zener

    Abstract: g7N60C3D g7n60c HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121
    Text: HGTP7N60C3D, HGT1S7N60C3DS TM Data Sheet November 2000 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices


    Original     		HGTP7N60C3D, HGT1S7N60C3DS HGTP7N60C3D HGT1S7N60C3DS 150oC. TA49115. TA49057. 8508 zener g7N60C3D g7n60c HGT1S7N60C3DS9A TA49121 PDF

    G7N60

    Abstract: G7N60B3D tb105 igbt g7n60b3d HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660
    Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) G7N60 G7N60B3D tb105 igbt g7n60b3d HGT1S7N60B3DS9A RHRD660 PDF

    G7N60C3

    Abstract: G7N60 g7n60c HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 RHRD660
    Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state


    Original     		HGTD7N60C3S, HGTP7N60C3 HGTD7N60C3S HGTP7N60C3 150oC. G7N60C3 G7N60 g7n60c HGTD7N60C3S9A RHRD660 PDF

    G7N60B3

    Abstract: G7N60 G7N60B HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 HGT1S7N60B3S
    Text: HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S G7N60B3 G7N60 G7N60B HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 PDF

    G7N60C3

    Abstract: No abstract text available
    Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTD7N60C3S, HGTP7N60C3 HGTD7N60C3S HGTP7N60C3 150oC. G7N60C3 PDF

    g7N60C3D

    Abstract: No abstract text available
    Text: HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3D 150oC. TA49115. TA49057. 140nild g7N60C3D PDF

    g7n60a4d

    Abstract: g7n60a G7N60A4 HGT1S7N60A4DS HGT1S7N60A4DS9A HGTG7N60A4D HGTP7N60A4D TA49331 TA49370 HGTG*N60A4D
    Text: G7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Data Sheet January 2005 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS HGTP7N60A4D HGT1S7N60A4DS 150oC. TA49331. TA49370. g7n60a4d g7n60a G7N60A4 HGT1S7N60A4DS9A HGTG7N60A4D TA49331 TA49370 HGTG*N60A4D PDF

    G7N60C3D

    Abstract: G7N60C3 G7N60 DIODE 809 marking HGTP7N60C3D RHRD660 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A TA49121
    Text: HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3D 150oC. TA49115. TA49057. 140ns G7N60C3D G7N60C3 G7N60 DIODE 809 marking HGTP7N60C3D RHRD660 HGT1S7N60C3DS HGT1S7N60C3DS9A TA49121 PDF

    G7N60C3D

    Abstract: G7N60 TA49121 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D
    Text: HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB • 14A, 600V at TC = +25oC • • • • • EMITTER COLLECTOR GATE 600V Switching SOA Capability


    Original     		HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS O-220AB 140ns 150oC O-262AA HGT1S7N60C3D G7N60C3D G7N60 TA49121 HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D PDF

    g7n60c

    Abstract: G7N60 G7N60C3 HGTD7N60C3 HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 RHRD660
    Text: HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT June 1996 Features Packaging • 14A, 600V at TC = +25oC • • • • JEDEC TO-220AB EMITTER 600V Switching SOA Capability Typical Fall Time - 140ns at TJ = +150oC


    Original     		HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 O-220AB 140ns 150oC O-251AA HGTD7N60C3S HGTP7N60C3 g7n60c G7N60 G7N60C3 HGTD7N60C3 HGTD7N60C3S9A RHRD660 PDF

    G7N60B3

    Abstract: G7N60B HGT1S7N60B3 HGT1S7N60B3S HGTD7N60B3 HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3
    Text: HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 Semiconductor 14A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 14A, 600V, TC = 25oC The HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high


    Original     		HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S HGTP7N60B3 G7N60B3 G7N60B HGT1S7N60B3 HGTD7N60B3 HGTD7N60B3S HGTD7N60B3S9A PDF

    g7n60b3d

    Abstract: G7N60B3 G7N60 igbt g7n60b3d N 407 Diode
    Text: HARRIS HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode November 1997 Features Description • 14A, 600V, T C = 2 5 °C The HGTP7N60B3D, HGT1S7N60B3D and HGT1S7N60B3DS


    OCR Scan     		HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS HGT1S7N60B3D HGT1S7N60B3DS TA49190. RHRD660 TA49057) 1-800-4-HARRIS g7n60b3d G7N60B3 G7N60 igbt g7n60b3d N 407 Diode PDF

    g7n60b3d

    Abstract: igbt g7n60b3d 476 10R 931 g7n60b3 C110 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 IN8001
    Text: in t e HGTP7N60B3D, HGT1S7N60B3DS r r ii J a n u a ry . m D ata S h eet 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    OCR Scan     		HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS TA49190. RHRD660 TA49057) g7n60b3d igbt g7n60b3d 476 10R 931 g7n60b3 C110 HGT1S7N60B3DS9A RHRD660 IN8001 PDF

    igbt 600V

    Abstract: g7n60c TA49121 G7N60C3D 50QL HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D LD26
    Text: HGTP7N60C3D, HGT1S7N60C3DS interrii J a n u a ry . m Data Sheet 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and H G T1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices


    OCR Scan     		HGTP7N60C3D, HGT1S7N60C3DS HGTP7N60C3D HGT1S7N60C3DS TA49115. TA49057. igbt 600V g7n60c TA49121 G7N60C3D 50QL HGT1S7N60C3D HGT1S7N60C3DS9A LD26 PDF

    g7n60b3

    Abstract: g7N60B G7N60 C110 HGT1S7N60B3S HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3
    Text: HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 in t e r r ii J a n u a ry . m Data Sheet 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    OCR Scan     		HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S HGTP7N60B3 g7n60b3 g7N60B G7N60 C110 HGTD7N60B3S HGTD7N60B3S9A PDF

    7N60C3

    Abstract: 7N60C3D S7N60 g7N60C3D Zener Diode LT 432 diode lt 823 S7N60C3D 600VU NT 407 F power transistor
    Text: H G TP 7N60C3D, HGT1S 7N60C3D, HGT1S7N60C3DS H A R R IS S E M I C O N D U C T O R 1 4 A, 60 0V, U F S S e r i e s N - C h a n n e l I G B T January 1997 wi th An ti - P a r a i I el H y p e r f a s t D i o d e s Features Packaging JEDEC TO-22QAB • 1 4A, 6 0 0 V at T c = 2 5 ° C


    OCR Scan     		7N60C3D, HGT1S7N60C3DS O-22QAB O-262AA HGTP7N60C3D, HGT1S7N60C3D HGT1S7N60C3DS -800-4-H 7N60C3 7N60C3D S7N60 g7N60C3D Zener Diode LT 432 diode lt 823 S7N60C3D 600VU NT 407 F power transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode November 1997 Features Description • 14A, 600V, T C = 25°C The HGTP7N60B3D, HGT1S7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining


    OCR Scan     		HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS HGT1S7N60B3D TA49190. RHRD660 TA49057) 1-800-4-HARRIS PDF