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    HGT1S7N60B3DS9A Search Results

    HGT1S7N60B3DS9A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGT1S7N60B3DS9A Fairchild Semiconductor 14 A, 600 V, UFS N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF

    HGT1S7N60B3DS9A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    g7n60b3d

    Abstract: igbt g7n60b3d G7N60B3 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 2MH22 150OC
    Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) g7n60b3d igbt g7n60b3d G7N60B3 HGT1S7N60B3DS9A RHRD660 2MH22

    Untitled

    Abstract: No abstract text available
    Text: HGT1S7N60B3DS Data Sheet 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGT1S7N60B3DS is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGT1S7N60B3DS HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057)

    g7n60

    Abstract: G7N60B3
    Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) g7n60 G7N60B3

    G7N60

    Abstract: G7N60B3D tb105 igbt g7n60b3d HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660
    Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) G7N60 G7N60B3D tb105 igbt g7n60b3d HGT1S7N60B3DS9A RHRD660

    G7N60B3D

    Abstract: G7N60B3 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 TA49190
    Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) G7N60B3D G7N60B3 HGT1S7N60B3DS9A RHRD660 TA49190

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    g7n60b3d

    Abstract: igbt g7n60b3d HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 G7N60
    Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    Original     		PDF HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) g7n60b3d igbt g7n60b3d HGT1S7N60B3DS9A RHRD660 G7N60

    g7n60b3d

    Abstract: G7N60B3 igbt g7n60b3d
    Text: S E M I C O N D U C T O R HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode November 1997 Features Description • 14A, 600V, TC = 25oC The HGTP7N60B3D, HGT1S7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining


    Original     		PDF HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS HGT1S7N60B3D HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) g7n60b3d G7N60B3 igbt g7n60b3d

    g7n60b3d

    Abstract: igbt g7n60b3d 476 10R 931 g7n60b3 C110 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 IN8001
    Text: in t e HGTP7N60B3D, HGT1S7N60B3DS r r ii J a n u a ry . m D ata S h eet 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    OCR Scan     		PDF HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS TA49190. RHRD660 TA49057) g7n60b3d igbt g7n60b3d 476 10R 931 g7n60b3 C110 HGT1S7N60B3DS9A RHRD660 IN8001