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    275X2 Search Results

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    275X2 Price and Stock

    Littelfuse Inc V10E275X2688

    Varistors 275V 10mm Epoxy UltraMOV
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    Mouser Electronics V10E275X2688
    • 1 $0.74
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    • 1000 $0.313
    • 10000 $0.268
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    CTS Corporation 275X232L103B1A1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 275X232L103B1A1
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    IXYS Corporation 275X2-501N16A-00

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 275X2-501N16A-00 42
    • 1 $124.82
    • 10 $106.097
    • 100 $99.856
    • 1000 $99.856
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    Knowles Capacitors CSA5275X21X8K61R8J

    Film Capacitors 61.8PF 100V 5%
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    TTI CSA5275X21X8K61R8J WAFL 600 1
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    275X2 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    275X2-102N06A-00 IXYS-RF Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET 2 N-CHANNEL DE275 Original PDF
    275X2-501N16A-00 IXYS-RF Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET 2 N-CHANNEL DE275 Original PDF

    275X2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Profile 8254 275x21 mm Weight (Kg/mt) Width (mm) Height (mm) RTH (C/W)* *Lenght (mm) 8,7 275 21 0,65 200 PADA ENGINEERING S.r.l. Via G. B. Pirelli, 11 - Saltara (PU) 61030 - Italy Tel. +39 0721 899555 - Fax. +39 0721 897064 - www.padaengineering.com


    Original
    PDF 275x21

    Untitled

    Abstract: No abstract text available
    Text: 275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The 275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.


    Original
    PDF DE275X2-501N16A DE275X2-501N16A

    DE275X2-501N16A

    Abstract: "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2
    Text: 275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The 275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.


    Original
    PDF DE275X2-501N16A DE275X2-501N16A "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2

    servomotor Omron R88M

    Abstract: R88D-KN04H-ECT EN61800-5-2 R88A-CPG R88D Omron Manual R88A-CRK omron r88d R88D-KT15H R88D-KT04H R88D-KN
    Text: DataSheet G5-Series System Configuration .2 AC Servomotors/Servo Drives with Built-in EtherCAT Communications.2 AC Servomotors/Servo Drives with General-purpose Pulse Train or Analog


    Original
    PDF 2356-81-300/Fax: 847-843-7900/Fax: 6835-3011/Fax: 21-5037-2222/Fax: I816-E1-05 servomotor Omron R88M R88D-KN04H-ECT EN61800-5-2 R88A-CPG R88D Omron Manual R88A-CRK omron r88d R88D-KT15H R88D-KT04H R88D-KN

    Untitled

    Abstract: No abstract text available
    Text: G•SiC Technology UltraBright LEDs CxxxUB29x-S0100 Features • Applications UltraBright® LED Performance – – – – 3.8mW min 460nm Deep Blue 3.4mW min (470nm) Blue 2.5mW min (505nm) Signal Green 1.7mW min (527nm) Green • Sorted to Wavelength and Power Bins


    Original
    PDF CxxxUB29x-S0100 460nm) 470nm) 505nm) 527nm) 527nm 505nm 470nm

    120LQ045

    Abstract: No abstract text available
    Text: PD - 91858 SCHOTTKY RECTIFIER 120LQ045 HIGH EFFICIENCY SERIES 120 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 120LQ045 Units IF AV 120 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 800 A VF @ 120Apk, TJ =125°C 1.07 V TJ,TstgOperating and storage -55 to 150


    Original
    PDF 120LQ045 120Apk, 120LQ045 MIL-PRF-19500

    legrand 037 30

    Abstract: legrand 037 87 legrand 037 40 operating instructions legrand 037 40 legrand 037 53 legrand 037 00 operating instructions legrand 036 70 Legrand data sockets LEGRAND 037 legrand 037 02
    Text: Technical catalogue ABB SACE A division of ABB S.p.A. Enclosures and Cable Systems Viale Vicenza, 61 36063 Marostica VI - Italy Tel.: +39 0424 478200 - Telefax: +39 0424 478310 http://www.abb.com 1SLC001001D0203 November ‘08 Printed in Italy 3.000 - CAL


    Original
    PDF 1SLC001001D0203 1SLC001001D0203 legrand 037 30 legrand 037 87 legrand 037 40 operating instructions legrand 037 40 legrand 037 53 legrand 037 00 operating instructions legrand 036 70 Legrand data sockets LEGRAND 037 legrand 037 02

    Untitled

    Abstract: No abstract text available
    Text: PD - 94396 SCHOTTKY RECTIFIER 120LQ100 HIGH EFFICIENCY SERIES 120 A, 100V Major Ratings and Characteristics Characteristics Description/Features 120LQ100 Units IF AV 120 A VRRM 100 V IFSM @ tp = 8.3ms half-sine 1000 A VF @ 120Apk, TJ =125°C 0.74 V TJ,TstgOperating and storage -55 to 150


    Original
    PDF 120LQ100 120Apk, 120LQ100 MIL-PRF-19500

    Untitled

    Abstract: No abstract text available
    Text: PD - 91858 SCHOTTKY RECTIFIER 120LQ045 HIGH EFFICIENCY SERIES 120 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 120LQ045 Units IF AV 120 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 800 A VF @ 120Apk, TJ =125°C 1.07 V TJ,TstgOperating and storage -55 to 150


    Original
    PDF 120LQ045 120Apk, 120LQ045 MIL-PRF-19500

    120LQ100

    Abstract: No abstract text available
    Text: PD - 94396 SCHOTTKY RECTIFIER 120LQ100 HIGH EFFICIENCY SERIES 120 A, 100V Major Ratings and Characteristics Characteristics Description/Features 120LQ100 Units IF AV 120 A VRRM 100 V IFSM @ tp = 8.3ms half-sine 1000 A VF @ 120Apk, TJ =125°C 0.74 V TJ,TstgOperating and storage -55 to 150


    Original
    PDF 120LQ100 120Apk, 120LQ100 MIL-PRF-19500

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    DE275X2-102N06A

    Abstract: mosfet pair DE275X2-102N06A 1000 volt mosfet 50W rf power transistor 100MHz RF POWER MOSFET TRANSISTOR 100MHz 102N06A 400P 10-DOF 275X2-102N06A ssd2
    Text: 275X2-102N06A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The 275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.


    Original
    PDF DE275X2-102N06A DE275X2-102N06A 102N06A mosfet pair DE275X2-102N06A 1000 volt mosfet 50W rf power transistor 100MHz RF POWER MOSFET TRANSISTOR 100MHz 400P 10-DOF 275X2-102N06A ssd2

    DE275X2-102N06A

    Abstract: mosfet pair DE275X2-102N06A 1000 volt mosfet "RF MOSFETs" 102N06A 400P 275x2-102n06a rf power mosfet MOSFET 50 amp 1000 volt
    Text: 275X2-102N06A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The 275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.


    Original
    PDF DE275X2-102N06A DE275X2-102N06A 102N06A mosfet pair DE275X2-102N06A 1000 volt mosfet "RF MOSFETs" 400P 275x2-102n06a rf power mosfet MOSFET 50 amp 1000 volt

    Untitled

    Abstract: No abstract text available
    Text: RF POWER MOSFET Products Product Line of mom D ire cte d Etiergy, inc. An QIXYS Company DE Series The patented DE-SERIES Fast Power MOSFETs are a new class of unique high power transistors designed as a circuit element from the ground up for high speed, high frequency, high power applications at frequencies up to 100 MHz. DEI's Fast Power™ technology


    OCR Scan
    PDF de102N02A 275-102N06A 275X2-102N06A 375-102N12A 475-102N21A 275x2