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    Microchip Technology Inc 2N6760

    MOSFET N-CH 400V 5.5A TO204AA
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    Microchip Technology Inc JANTX2N6760

    MOSFET N-CH 400V 5.5A TO204AA
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    Microchip Technology Inc JANTXV2N6760

    MOSFET N-CH 400V 5.5A TO204AA
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    Unitrode Corporation JANTX2N6760

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    Bristol Electronics JANTX2N6760 37 1
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    International Rectifier JANTX2N6760

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    Bristol Electronics JANTX2N6760 7 1
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    NexGen Digital JANTX2N6760 3
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    2N6760 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6760 International Rectifier HEXFET TRANSISTORS Original PDF
    2N6760 Microsemi N Channel MOSFET; Package: TO-204AA; Original PDF
    2N6760 Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V TO-3 Original PDF
    2N6760 Fairchild Semiconductor N-Channel Power MOSFETs, 5.5A, 350V/400V Scan PDF
    2N6760 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. Scan PDF
    2N6760 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    2N6760 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan PDF
    2N6760 IXYS High Voltage Power MOSFETs Scan PDF
    2N6760 IXYS High Voltage Power MOSFETs Scan PDF
    2N6760 Motorola Switchmode Datasheet Scan PDF
    2N6760 Motorola European Master Selection Guide 1986 Scan PDF
    2N6760 Motorola Power Transistor Selection Guide Scan PDF
    2N6760 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    2N6760 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6760 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6760 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6760 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6760 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6760 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6760 Unknown FET Data Book Scan PDF

    2N6760 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DD 127 D TRANSISTOR

    Abstract: transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6762 2N6760 JANTX 121465 2n6760
    Text: 2N6756, 2N6758, 2N6760 and 2N6762 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/542 DESCRIPTION This family of 2N6756, 2N6758, 2N6760 and 2N6762 switching transistors are military qualified up to the JANTXV level for high-reliability applications. Microsemi also offers


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    2N6756, 2N6758, 2N6760 2N6762 MIL-PRF-19500/542 2N6762 DD 127 D TRANSISTOR transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6760 JANTX 121465 PDF

    mosfet to3

    Abstract: irf33 2N6760 IRF330 LE17
    Text: N-CHANNEL POWER MOSFET IRF330 / 2N6760 • Power MOSFET Transistor In A Hermetic Metal TO-3 Package • High Input Impedance / RDS on < 1.0Ω • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available


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    IRF330 2N6760 O-204AA) mosfet to3 irf33 2N6760 LE17 PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6760 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


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    MIL-PRF-19500/542 2N6760 O-204AA) T4-LDS-0152 PDF

    2N6760

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6760 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


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    MIL-PRF-19500/542 2N6760 O-204AA) T4-LDS-0152 2N6760 PDF

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET IRF330 / 2N6760 • Power MOSFET Transistor In A Hermetic Metal TO-3 Package • High Input Impedance / RDS on < 1.01 • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available


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    IRF330 2N6760 O-204AA) PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6760+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)5.5 I(DM) Max. (A) Pulsed I(D)3.5 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


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    2N6760 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6760+JAN Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)5.5 I(DM) Max. (A) Pulsed I(D)3.5 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


    Original
    2N6760 PDF

    2N6760

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6760 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


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    MIL-PRF-19500/542 2N6760 O-204AA) T4-LDS-0152 2N6760 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6760+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)5.5 I(DM) Max. (A) Pulsed I(D)3.5 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


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    2N6760 PDF

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


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    30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 PDF

    1A31E

    Abstract: 2N6759 2N6760
    Text: 3 8 7 5081 G E SOL ID S T A T E 01 DE | 3fi7SDfll □ □ 1 0 3 *1 5 a r ° • , T ' 3 9 ’ 11 _ Standard Power MOSFETs 2N6759, 2N6760 File Number 1588 N-Channel Enhancement-Mode Poyver Field-Effect Transistors 4.5A and 5.5A, 350V - 400V rDs on = 1.0 fi and 1.5 Q


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    1A31E T-39-11 2N6759, 2N6760 2N6759 2N6760 2N6/60 1A31E PDF

    2N6760

    Abstract: 2N6898 2N67 2N6759
    Text: Standard Power M O SFETs 2N6759, 2N6760 File Number 1588 N-Channel Enhancement-Mode Power Field-Effect Transistors T E R M IN A L D IA G R A M 4.5A and 5.5A, 350V - 400V rDs on = 1.0 Q and 1.5 Q o 9 Features: • SOA is pow er-dissipation lim ited ■ N anosecond sw itching speeds


    OCR Scan
    2N6759, 2N6760 2N6759 2N6760 TQ-204AA 2N6796 O-2I35AF O-205AF 2N6800 2N6898 2N67 PDF

    2N6760

    Abstract: MF2400 2N6759 E7A04
    Text: ñ4 3469674 FAIRCHILD SEMICONDUCTOR uni n i dËT| 3 4 b T t , 7 4 □ □ 2 7 A D D 84D 27800 D 2N6759/2N6760 N-Channel Power MOSFETs, 5.5 A, 350 V/400 V F a ir c h ild A Schlum berger Com pany _ Power And Discrete Division D escription These devices are n-channel, enhancement mode, power


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    34tTb74 2N6759/2N6760 T-39-11 2N6759 2N6760 2N6760 E7A04 MF2400 PDF

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan
    2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r PDF

    2N6760

    Abstract: 2N67 2N6759
    Text: Standard Power MOSFETs 2N6759, 2N6760 File Number 1588 N-Channel Enhancement-Mode Power Field-Effect Transistors T E R M IN A L D IA G R A M 4.5A and 5.5A, 350V - 400V rDs on = 1.0 Q and 1.5 Q o 9 Features: • SOA is pow er-dissipation lim ited ■ N anosecond sw itching speeds


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    2N6759, 2N6760 2N6759 2N6760 TQ-204AA 2N67 PDF

    2N6759

    Abstract: N675
    Text: MOTOROLA SEMICONDUCTOR 2N6759 2N6760 TECHNICAL DATA D c s ì ^ i k m ' s l a l ; i 4.5 and 5.5 AMPERE N-CHANNEL TMOS POWER FETs N^CHANNEL ENHANCEMENT-MODE SIUCON GATE TMOS POWER FIELD EFFECT TRANSISTOR rDS on) = 1 5 OHM 350 VOLTS These TMOS Power FETs are designed for high voltage, high


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    2N6759 2N6760 2N6760 19500/542A N675 PDF

    Untitled

    Abstract: No abstract text available
    Text: Type No. IRF232 IRF630 IRF631 IRF632 IRF633 9-16 2N6759 2N6760 IRF330 IRF331 IRF333 IRF730 IRF731 TO-204AA 42 T 02 04A A (42) TO-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) 70220 (37) T0204AA (42) TO-204AA (42) T 02 04A A (42) T0-204AA (42)


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    IRF232 IRF233 IRF630 IRF631 IRF632 IRF633 MTP12N18 MTP12N20 2N6759 2N6760 PDF

    2N6759

    Abstract: No abstract text available
    Text: 2J 2 N 6 759 2N6760 Ha r r is N -C hannel Enhancem ent-M ode Power Field-E ffect Transistors August 1991 Package Features T0-204AA • 4.5 A and 5.5A, 350V - 400V BO TTO M VIEW • roS on = 1-o n and SOURCE • SOA is Power-Dissipation Limited / DRAIN (FLANGE)


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    T0-204AA 2N6760 2N6759 2N6760 PDF

    TO-254

    Abstract: T0-204 IRF450 equivalent
    Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS


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    2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent PDF

    CMD8

    Abstract: No abstract text available
    Text: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)


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    DD3711b T-39-01 CMD8 PDF

    2n6152

    Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90
    Text: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (*typ) (max) (pF) (max) *typ (0) *typ (A) Id (A) Vg s (V) *typ (S) Id


    OCR Scan
    2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 1N7000 2N61B 2N676 1N7001 2N5184 2N6164 2n6800 IXTP4N90 PDF

    lts 542

    Abstract: LTS 543 2n6800 LTS 542 INTERNAL DIAGRAM 2N6756 2N6790 LH0063 QPL-19500 TRANSISTOR C 557 B
    Text: Standard Power MOSFETs 2N6790 File N u m be r 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE TDSIonl = 0 . 8 0 Features: • a ■ ■ m SOA is power-dissipation limited Nanosecond switching speeds


    OCR Scan
    2N6790 92cs-3374i 2N6790 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF lts 542 LTS 543 LTS 542 INTERNAL DIAGRAM 2N6756 LH0063 QPL-19500 TRANSISTOR C 557 B PDF

    QPL-19500

    Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
    Text: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits


    OCR Scan
    2N6903 2N6903 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ QPL-19500 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760 PDF

    1N7001

    Abstract: 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211 IXTP4N90
    Text: - M. A %¿ £ tt t Vd s or * Vd g h V € £ të (Ta=25^C) Vg s (V) Ig s s Pd Id * /CH * /CH (A) (W) % 1 CnA) V g s th) Id s s Vg s (V) (m a Vd s (V) ) min max (V) (V) Vd s = Vg s Id (mA) Ö-) '14 F Ds(on) b(on) gfs Ciss Coss Crss <*typ) (max) (pF) (*typ)


    OCR Scan
    XTP4N80 O-220 IXTP4N80A IXTP4N90 T0-204AA 2N6659 O-205AF 2N6660 1N7001 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211 PDF