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    2SK110 Search Results

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    Panasonic Electronic Components 2SK11030QL

    JFET N-CH 20MA MINI3-G1
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    DigiKey 2SK11030QL Reel
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    Rochester Electronics LLC 2SK1109(2)-A

    JFET N-CH
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    DigiKey 2SK1109(2)-A Bulk 1,015
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    Renesas Electronics Corporation 2SK1109(2)-A

    2SK1109(2)-A
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    Verical 2SK1109(2)-A 1,700 1,242
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    Rochester Electronics 2SK1109(2)-A 1,700 1
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    NEC Electronics Group 2SK1109-J36

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    Bristol Electronics 2SK1109-J36 300
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    FEC Semiconductor 2SK1102

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    Bristol Electronics 2SK1102 48 2
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    2SK110 Datasheets (57)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK11/0 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK110 Unknown FET Data Book Scan PDF
    2SK1100 Unknown FET Data Book Scan PDF
    2SK1101 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1101 Unknown N-CHANNEL SILICON POWER MOS-FET Scan PDF
    2SK1101 Unknown FET Data Book Scan PDF
    2SK1101-01M Collmer Semiconductor FAP-II Series / FAP-IIIA Series MOSFETS Scan PDF
    2SK1101-01M Fuji Electric N-CHANNEL SILICON POWER MOS-FET Scan PDF
    2SK1101-01MR Fuji Electric N-channel Silicon Power MOSFET Scan PDF
    2SK1101MR Unknown N-CHANNEL SILICON POWER MOS-FET Scan PDF
    2SK1102 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1102 Fuji Electric TRANS MOSFET N-CH 500V 10A 3TO-220F Scan PDF
    2SK1102 Unknown Scan PDF
    2SK1102 Unknown FET Data Book Scan PDF
    2SK1102-01 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1102-01M Collmer Semiconductor FAP-II Series / FAP-IIIA Series MOSFETS Scan PDF
    2SK1102-01M Fuji Electric N-CHANNEL SILICON POWER MOS-FET Scan PDF
    2SK1102-01MR Fuji Electric N-CHANNEL SILICON POWER MOS-FET Scan PDF
    2SK1102-01MR Fuji Electric N-channel Silicon Power MOSFET Scan PDF
    2SK1103 Panasonic TRANS JFET N-CH 6A 3MINI3-G1 Original PDF

    2SK110 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1104

    Abstract: 2SJ0164 2SJ164
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET For switching circuits Complementary to 2SK1104 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


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    PDF 2002/95/EC) 2SJ0164 2SJ164) 2SK1104 2SK1104 2SJ0164 2SJ164

    Untitled

    Abstract: No abstract text available
    Text: 2SK1103 Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction Unit : mm For switching Complementary with 2SJ163 +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 3 V Drain current ID ±20 mA Gate current IG 10 mA Allowable power dissipation


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    PDF 2SK1103 2SJ163

    2SK1104

    Abstract: 2SJ164 SC-72
    Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS


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    PDF 2SK1104 2SJ164 SC-72 2SK1104 2SJ164 SC-72

    analog switching ic

    Abstract: 2SK1103 UN1213 UNR1213 XN08081 XN8081
    Text: Composite Transistors XN08081 XN8081 Silicon N-channel junction (FET) Silicon NPN epitaxial planer transistor (Tr) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element • 2SK1103 + UNR1213 (UN1213)


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    PDF XN08081 XN8081) 2SK1103 UNR1213 UN1213) analog switching ic 2SK1103 UN1213 UNR1213 XN08081 XN8081

    2SK1104

    Abstract: 2SJ164
    Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 2.0±0.2 (0.8) 3.0±0.2 4.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 • Features 15.6±0.5 ■ Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SK1104 2SJ164 2SK1104 2SJ164

    2SK1103

    Abstract: XN1D873
    Text: Composite Transistors XN1D873 Silicon N-channel junction FET Unit: mm For analog switching +0.2 2.8 -0.3 +0.25 0.65±0.15 +0.1 +0.1 0 to 0.1 2SK1103 x 2 elements • Absolute Maximum Ratings 1 : Gate Tr1 2 : Gate (Tr2) 3 : Source (Tr2) (Ta=25˚C) Parameter


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    PDF XN1D873 2SK1103 2SK1103 XN1D873

    2SK1103

    Abstract: XP1D873
    Text: Composite Transistors XP1D873 Silicon N-channel junction FET Unit: mm 0.2±0.05 For analog switching 2.1±0.1 2.0±0.1 2 5 3 4 0.9± 0.1 • Basic Part Number of Element 2SK1103 x 2 elements 0 to 0.1 ● 0.7±0.1 +0.05 ● 1 0.425 0.12 – 0.02 ● Two elements incorporated into one package.


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    PDF XP1D873 2SK1103 2SK1103 XP1D873

    2sk129

    Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119


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    PDF 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2sk129 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 2.0±0.2 (0.8) 3.0±0.2 M Di ain sc te on na tin nc ue e/ d 4.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 • Features


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    PDF 2SK1104 2SJ164

    2SJ0163

    Abstract: 2SJ163 2SK1103
    Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation


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    PDF 2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103

    FET121

    Abstract: 2SK1103 XN0D873 XN1D873
    Text: Composite Transistors XN0D873 XN1D873 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 4 5 1.50+0.25 –0.05 3 1 1.1+0.2 –0.1 10˚ • 2SK1103 x 2 • Absolute Maximum Ratings Ta = 25°C


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    PDF XN0D873 XN1D873) 2SK1103 SC-74A FET121 2SK1103 XN0D873 XN1D873

    2SK1104

    Abstract: 2SJ164 2sj16
    Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 M Di ain sc te on na tin nc ue e/ d unit: mm 2.0±0.2 ● Low ON-resistance ● Low-noise characteristics 15.6±0.5 • Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SK1104 2SJ164 2SK1104 2SJ164 2sj16

    2SJ163

    Abstract: 2SK1103
    Text: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS −65 V Drain current ID 20 mA Gate current


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    PDF 2SK1103 2SJ163 2SJ163 2SK1103

    2SK1103

    Abstract: UN1213 XP8081
    Text: Composite Transistors XP8081 Silicon N-channel junction FET Tr1 Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For analog switching (Tr1)/switching (Tr2) 1 6 2 5 3 4 0 to 0.1 2SK1103+UN1213 (transistors with built-in resistor) 0.12 –0.02 0.9±0.1


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    PDF XP8081 2SK1103 UN1213 UN1213 XP8081

    2SK1011

    Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


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    PDF 2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1011 2SK1013-01 2SK1222-01 2sk1211

    A2149

    Abstract: cnc schematic 2SK1101-01M 2SK series 3dd4 A2148 6aj5
    Text: 2SK1101-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S Outline Drawings • Features 'H ig h speed sw itching »Low o n-resistance »No secondary b reakdow n • Low driving p o w er ►High voltage


    OCR Scan
    PDF 2SK1101-01M SC-67 0D030Dti A2-150 A2149 cnc schematic 2SK series 3dd4 A2148 6aj5

    Untitled

    Abstract: No abstract text available
    Text: 2SK1101-01M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S I Outline Drawings • Features • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage • V gss = ± 3 0 V G uarantee


    OCR Scan
    PDF 2SK1101-01M 1101-01M

    2sk1507

    Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan
    PDF 2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2sk1507 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1013-01

    A2151

    Abstract: No abstract text available
    Text: 2SK1102-01 MR FUJI P O W E R M O S - F E T N-Ch ANNEL SILICON POWER MOS-FET F-II SERIES • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V rss = ± 3 0 V Guarantee • Avalanche-proof


    OCR Scan
    PDF 2SK1102-01 538B-7680 A2151

    2SK2079-01M

    Abstract: 2SK2079 2SK2001-01M 2SK1549 2SK900 2SK901 2SK902 2SK905 2SK906 2SK947M
    Text: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45


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    PDF 2SK905 2SK906 2SK900 T0220 2SK947M T0220F15 2SK901 2SK1549 T03PF 2SK902 2SK2079-01M 2SK2079 2SK2001-01M

    2SK1012

    Abstract: 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 2SK1917-01M
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan
    PDF 2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1012 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102

    K1105

    Abstract: No abstract text available
    Text: 2SK1105-R FUJI P O W E R M O S-FE T N-CHANNEL SILICON POWER MOS-FET F - I S E R I E S • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators


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    PDF 2SK1105-R GaTg30 K1105

    Untitled

    Abstract: No abstract text available
    Text: <s MOSFETs FAP-II Series V G S ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2 S K 1 006-01M 2 S K 1 007-01 2 SK 1 009-01 2 S K 1 386-01 2 S K 1 0 1 1-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2 SK 1 008-01


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    PDF 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01

    2SK2079

    Abstract: 2SK2079-01M
    Text: S MOSFETs F-l Series Low Rds (ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Maximum Ratinas Id (A) V dss (V) Pd (W)


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    PDF 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK2079 2SK2079-01M