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    2SK118 Price and Stock

    Sanken Electric Co Ltd 2SK1186

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    Quest Components 2SK1186 192
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    Toshiba America Electronic Components 2SK118

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    Transistors
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    Sanken Electric 2SK1186

    Transistors
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    Sanken Electric 2SK1187

    Transistors
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    2SK118 Datasheets (55)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK118 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK118 Unknown Scan PDF
    2SK118 Unknown Field Effect Transistor. Silicon N Channel junction type Scan PDF
    2SK118 Unknown FET Data Book Scan PDF
    2SK118 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK118 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK118 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK118 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan PDF
    2SK118 Toshiba Silicon N channel field effect transistor for general purpose and impedance converter and condenser microphone applications Scan PDF
    2SK118 Toshiba TO-92 Mini Package Transistors / Junction FETs Scan PDF
    2SK1180 Allegro MicroSystems TRANS MOSFET 500V 10A 3TO-3PF Original PDF
    2SK1180 Sanken Electric TRANS MOSFET N-CH 500V 10A 3TO-3PF Original PDF
    2SK1180 Sanken Electric MOSFET Selection Guide Original PDF
    2SK1180 Sanken Electric MOSFET Selection Guide Original PDF
    2SK1181 Allegro MicroSystems TRANS MOSFET 500V 13A 3TO-3PF Original PDF
    2SK1181 Sanken Electric TRANS MOSFET N-CH 500V 13A 3TO-3PF Original PDF
    2SK1181 Sanken Electric MOSFET Selection Guide Original PDF
    2SK1181 Sanken Electric MOSFET Selection Guide Original PDF
    2SK1183 Allegro MicroSystems TRANS MOSFET 200V 3A 3TO-220F Original PDF
    2SK1183 Sanken Electric TRANS MOSFET N-CH 200V 3A 3TO-220F Original PDF

    2SK118 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK1185

    Abstract: FM20
    Text: 2SK1185 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics (Ta = 25ºC) Ratings typ Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS VGSS ±20 V I GSS ±500 nA VGS = ±20V ID ±5 A I DSS 250 µA VDS = 100V, VGS = 0V


    Original     		2SK1185 2SK1185 FM20 PDF

    2SK1181

    Abstract: No abstract text available
    Text: 2SK1181 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ID ±13 A I DSS A VTH 2.0 8.5 ±52 (Tch ID (pulse) 150ºC) min 500 I D = 250µA, VGS = 0V


    Original     		2SK1181 FM100 2SK1181 PDF

    SLA5038

    Abstract: 2SK1190 SLA5015 2SK1192 SLA5013 2SK1180 2SK1191 SLA5012 SMA5106 2SK2848
    Text: 3 Power MOSFETs 3-1. MOSFETs 3-2. MOSFET Arrays 25 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419


    Original     		2SK1188 2SK1189 2SK2419 2SK1190 2SK2420 2SK1191 2SK2421 2SK1192 2SK1712 2SK1185 SLA5038 2SK1190 SLA5015 2SK1192 SLA5013 2SK1180 2SK1191 SLA5012 SMA5106 2SK2848 PDF

    condenser microphone 20hz

    Abstract: 2SK118
    Text: TOSHIBA 2SK118 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2 S K 1 18 Unit in mm GENERAL PURPOSE A N D IM PEDANCE CONVERTER A N D CONDENSER MICROPHONE APPLICATIONS 4.2 MAX. • • • High Breakdown Voltage High Input Impedance Low Noise


    OCR Scan     		2SK118 100k0, 120Hz) 55MAX. condenser microphone 20hz 2SK118 PDF

    2SK1186

    Abstract: FM20
    Text: 2SK1186 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS VGSS ±20 V I GSS ID ±9 A I DSS A VTH 2.0 W Re (yfs) 2.4 ±36 (Tch ID (pulse) 150ºC) 30 (Tc = 25ºC)


    Original     		2SK1186 2SK1186 FM20 PDF

    2SK1177

    Abstract: 2SK2420 2SK1180
    Text: 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419 22.0 35 EAS RDS (ON) max (VGS = 10V) Ciss (typ)


    Original     		2SK1188 2SK1189 2SK2419 2SK1190 2SK2420 2SK1191 2SK2421 2SK1192 2SK1712 2SK1185 2SK1177 2SK1180 PDF

    2SK118

    Abstract: 2SK1182 2SK118+equivalent
    Text: 2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		2SK118 2SK118 2SK1182 2SK118+equivalent PDF

    2SK3460

    Abstract: 2SK2710A 2SK3332 2SK3460 equivalent 2SK2708 FKV550T 2SK1190 2SK1191 2SK2706 2SK3199 equivalent
    Text: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V 2SJ424* VGSS (V) ID (A) ID (pulse) (A) PD (W) ±5 ±20 25 ±20 ±8 ±32 ±20 ±2.5 ±10 500 ±20 ±8.5 2SK1180 500 ±20 2SK1181 500 2SK1183 −60 ±20 2SJ425 −60


    Original     		2SJ424* 2SK1180 2SK1181 2SK1183 2SJ425 2SK1177 2SK1179 2SK1184 2SK1185 2SK1186 2SK3460 2SK2710A 2SK3332 2SK3460 equivalent 2SK2708 FKV550T 2SK1190 2SK1191 2SK2706 2SK3199 equivalent PDF

    2SK1183

    Abstract: FM20
    Text: 2SK1183 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Ta = 25ºC Electrical Characteristics Ratings Unit Symbol (Ta = 25ºC) Ratings typ min Unit max Conditions VDSS 200 V V(BR) DSS V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA


    Original     		2SK1183 FM100 2SK1183 FM20 PDF

    2SK1187

    Abstract: FM20
    Text: 2SK1187 External dimensions 1 . FM20 Absolute Maximum Ratings Ratings Unit Symbol VDSS 100 V V BR DSS VGSS ±20 V I GSS ID ±12 A I DSS A VTH 2.0 W Re (yfs) 4.4 58 mJ RDS (on) 0.12 Tch 150 ºC Ciss Tstg –55 to +150 ºC ±48 (Tch 35 (Tc = 25ºC) PD


    Original     		2SK1187 2SK1187 FM20 PDF

    2SK1181

    Abstract: No abstract text available
    Text: 2SK1181 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ID ±13 A I DSS A VTH 2.0 85 (Tc = 25ºC) W Re (yfs) 8.5 ±52 (Tch ID (pulse) PD 150ºC)


    Original     		2SK1181 FM100 2SK1181 PDF

    2SK1185

    Abstract: FM20
    Text: 2SK1185 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS VGSS ±20 V I GSS ID ±5 A I DSS A VTH 2.0 W Re (yfs) 1.5 ±20 (Tch ID (pulse) 150ºC) 25 (Tc = 25ºC)


    Original     		2SK1185 2SK1185 FM20 PDF

    2sk129

    Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119


    Original     		2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2sk129 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131 PDF

    2SK1186

    Abstract: FM20
    Text: 2SK1186 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Ta = 25ºC Electrical Characteristics Ratings Unit Symbol min Unit max Conditions VDSS 100 V V(BR) DSS V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA VGS = ±20V ID ±9 A I DSS


    Original     		2SK1186 FM100 2SK1186 FM20 PDF

    2SK1184

    Abstract: FM20
    Text: 2SK1184 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Ta = 25ºC Electrical Characteristics Ratings Unit Symbol min Unit max Conditions VDSS 200 V V(BR) DSS V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA VGS = ±20V ID ±5 A I DSS


    Original     		2SK1184 FM100 2SK1184 FM20 PDF

    2SK1189

    Abstract: No abstract text available
    Text: TOSHIBA 2SK118 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 9 <; K 1 1 8 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS 4.2 MAX. • • • High Breakdown Voltage High Input Impedance Low Noise


    OCR Scan     		2SK118 120Hz) 2SK1189 PDF

    2SK1184

    Abstract: FM20
    Text: 2SK1184 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics (Ta = 25ºC) Ratings typ Symbol Ratings Unit Symbol VDSS 200 V V(BR) DSS VGSS ±20 V I GSS ±500 nA VGS = ±20V ID ±5 A I DSS 250 µA VDS = 200V, VGS = 0V


    Original     		2SK1184 2SK1184 FM20 PDF

    2SK1187

    Abstract: FM20
    Text: 2SK1187 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS VGSS ±20 V I GSS ±12 ID ±48 (Tch ID (pulse) 150ºC) 35 (Tc = 25ºC) PD min (Ta = 25ºC) Ratings typ


    Original     		2SK1187 2SK1187 FM20 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK118 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 18 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS 4.2MAX. • • • High Breakdown Voltage High Input Impedance Low Noise


    OCR Scan     		2SK118 55MAX. PDF

    2SK1188

    Abstract: FM20
    Text: 2SK1188 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V(BR) DSS VGSS ±20 V I GSS ID ±10 A I DSS A VTH 2.0 25 (Tc = 25ºC) W Re (yfs) 2.2 ±40 (Tch ID (pulse) PD 150ºC)


    Original     		2SK1188 2SK1188 FM20 PDF

    2SK1180

    Abstract: No abstract text available
    Text: 2SK1180 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics (Ta = 25ºC) Ratings typ Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ±500 nA VGS = ±20V ID ±10 A I DSS 250 µA VDS = 500V, VGS = 0V


    Original     		2SK1180 FM100 2SK1180 PDF

    2SK1188

    Abstract: FM20
    Text: 2SK1188 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Ta = 25ºC Ratings Unit Symbol min (Ta = 25ºC) Ratings typ Unit max Conditions VDSS 60 V V(BR) DSS V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA VGS = ±20V ID ±10 A I DSS


    Original     		2SK1188 FM100 2SK1188 FM20 PDF

    2sk170 FET

    Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
    Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch


    Original     		2SK246 2SJ103 2SK117 2SK362 2SK363 2SK364 2SJ104 2SK30ATM 2SK170 2SJ74 2sk170 FET Junction-FET fet to92 2SK118 2SJ74 2sk879 2sj105 2SJ14 PDF

    2SK118

    Abstract: No abstract text available
    Text: 2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		2SK118 2SK118 PDF