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    2SK1606 Search Results

    2SK1606 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1606 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK160-6 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1606 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1606 Unknown FET Data Book Scan PDF
    2SK1606 Panasonic Field Effect Transistors Scan PDF

    2SK1606 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA776

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA776 Silicon epitaxial planer type Unit : mm For the switching circuit ø0.45 max. Low forward rise voltage VF and satisfactory wave detection effi- 1st Band 2nd Band ciency Temperature coefficient of forward characteristic is small.


    Original     		PDF 2SK1606 MA776 DO-34) MA776

    2SK1606

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK1606 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 5.5±0.2 2.7±0.2 4.2±0.2 0.7±0.1 ● High-speed switching (switching power supply)


    Original     		PDF 2SK1606 2SK1606

    Untitled

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA785 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification Anode ● S-Mini type 2-pin package, enabling high-density mounting ● IF(AV)=100mA rectification possible


    Original     		PDF 2SK1606 MA785 100mA

    DIODE M4A

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA791 Silicon epitaxial planer type Unit : mm +0.2 For super high-speed switching circuit For small current rectification 2.8 –0.3 +0.25 1.5 –0.05 ● IF(AV)=100mA rectification possible ● Fast reverse recovery time trr, optimum for high-frequency rectifica-


    Original     		PDF 2SK1606 MA791 100mA DIODE M4A

    DIODE M4A

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA793 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification 2.1±0.1 ● S-Mini type 3-pin package with two elements (series connection) of MA792 incorporated 0.425


    Original     		PDF 2SK1606 MA793 MA792 100mA 100mA DIODE M4A

    MA789

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA789 Silicon epitaxial planer type Unit : mm +0.2 For super high-speed switching circuit For small current rectification 2.8 –0.3 +0.25 1.5 –0.05 ● Reverse voltage VR (DC value)= 60V guaranteed 1.45 0.95 3 +0.1


    Original     		PDF 2SK1606 MA789 200mA 0S-8130 100mA MA789

    schottky diode marking A7

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA2S707 Silicon epitaxial planer type Unit : mm For UHF mixer 1.60±0.05 • Features (0.2) Small forward voltage VF ● Large conversion gain GC and optimum for UHF mixer ● SS-Mini package, enabling down-sizing of the equipment and auto-


    Original     		PDF 2SK1606 MA2S707 schottky diode marking A7

    2SK1606

    Abstract: MA205WA MA204WA
    Text: 2SK1606 Switching Diodes MA204WA, MA205WA Silicon epitaxial planer type Unit : mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 ±0.05 1.45 0.8 4.0 ● Short 0.8 • Features capacity between pins, Ct 14.5±0.5 0.85 ● Supply 0.65 max. in radial taping manner possible


    Original     		PDF 2SK1606 MA204WA, MA205WA 2SK1606 MA205WA MA204WA

    Untitled

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA782 Silicon epitaxial planer type Unit : mm 0.3 min. For super high-speed switching circuit For small current rectification φ1.4±0.1 • Features Sealed in the LLD package, enabling high-density mounting Reverse voltage VR (DC value) = 40V guaranteed


    Original     		PDF 2SK1606 MA782 200mA

    Untitled

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA792 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification 2.1±0.1 ● S-Mini type 3-pin package, enabling high-density mounting ● IF(AV)=100mA rectification possible


    Original     		PDF 2SK1606 MA792 100mA 100mA

    ma741

    Abstract: M1L marking
    Text: 2SK1606 Schottky Barrier Diodes SBD MA741 Silicon epitaxial planer type Unit : mm For the switching circuit 2.1±0.1 0.425 1.25±0.1 0.425 ● Low forward rise voltage VF and satisfactory wave detection efficiency Extremely low reverse current IR 2 +0.1


    Original     		PDF 2SK1606 MA741 MA704A SC-70 ma741 M1L marking

    Untitled

    Abstract: No abstract text available
    Text: 2SK1606 Switching Diodes MA128 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 ● Short reverse recovery period trr ● Small capacity between pins, Ct ● High voltage resistance VR : 80V 3 0 to 0.05 0.1 to 0.3


    Original     		PDF 2SK1606 MA128 MA123

    MA740

    Abstract: Marking m3c
    Text: 2SK1606 Schottky Barrier Diodes SBD MA740 Silicon epitaxial planer type 2.8 –0.3 Repetitive peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current Single Double Single Double Single Double VRRM Storage temperature


    Original     		PDF 2SK1606 MA740 200mA 100mA MA740 Marking m3c

    Untitled

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA775 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification ø0.45 max. COLORED BAND INDICATES CATHODE ● VR (DC value)= 50V guaranteed 1st Band 2nd Band 2 • Absolute Maximum Ratings (Ta= 25˚C)


    Original     		PDF 2SK1606 MA775 DO-34) 100mA

    MA776

    Abstract: 2SK1606
    Text: 2SK1606 Schottky Barrier Diodes SBD MA776 Silicon epitaxial planer type Unit : mm For the switching circuit ø0.45 max. 5mm pitch insertion possible ● Low forward rise voltage VF and satisfactory wave detection effiTemperature coefficient of forward characteristic is small.


    Original     		PDF 2SK1606 MA776 DO-34 MA776 2SK1606

    Untitled

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA792WA Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification 2.1±0.1 ● S-Mini type 3-pin package with two elements (anode common) of MA792 incorporated 0.425


    Original     		PDF 2SK1606 MA792WA MA792 100mA 100mA

    104 M3D

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA745WK Silicon epitaxial planer type Unit : mm For the switching circuit 2.1±0.1 0.425 1.25±0.1 0.425 ● Low forward rise voltage VF, optimum for low-voltage rectification ● Fast reverse recovery time trr, optimum for high-frequency rectifica-


    Original     		PDF 2SK1606 MA745WK 104 M3D

    Untitled

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA788 Silicon epitaxial planer type Unit : mm +0.2 For super high-speed switching circuit For small current rectification 2.8 –0.3 +0.25 1.5 –0.05 ● Reverse voltage VR (DC value)= 60V guaranteed 1.45 0.95 3 +0.1


    Original     		PDF 2SK1606 MA788 200mA 200mA 100mA

    104 M3D

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA795WK Silicon epitaxial planer type 0.28±0.05 Extra-small (SS-Mini type) package, enabling high-density mounting Low VF type (IF=1mA), optimum for low voltage rectification of 3 2 VF = 0.3V or less ● 1 0.28±0.05


    Original     		PDF 2SK1606 MA795WK 104 M3D

    Untitled

    Abstract: No abstract text available
    Text: 2SK1606 Switching Diodes MA152WK Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 Small capacity between pins, Ct 1 0.95 ● +0.2 Short reverse recovery period trr


    Original     		PDF 2SK1606 MA152WK

    MA175WA

    Abstract: Ma175
    Text: 2SK1606 Switching Diodes MA175WA, MA176WA Silicon epitaxial planer type Unit : mm 4.0±0.2 3.0±0.2 For switching circuits Small capacity between pins, Ct • Absolute Maximum Ratings Ta= 25˚C Parameter Symbol MA175WA Reverse voltage (DC) MA176WA MA175WA


    Original     		PDF 2SK1606 MA175WA MA176WA MA175WA MA176WA Ma175

    marking 2D diode 2PIN

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA784 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification Anode S-Mini type 2-pin package, enabling high-density mounting ● IF(AV)=100mA rectification possible


    Original     		PDF 2SK1606 MA784 100mA 100mA marking 2D diode 2PIN

    2SK1606

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK1606 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)


    OCR Scan     		PDF 2SK1606 -150V, 2SK1606

    2sk2324

    Abstract: 2SK2124 2SK2127 2sk2323
    Text: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22C)F(a) TO-220E (D55) (D59) 2SK1605 2SK2123 2SK1606 TOP-3(a) (D60) TOP-3E (D65) 2SK2125 2SK1608 2SK2126 2SK1609 2SK2127 R o S 'ù n ; Id (A) 2SK2032 2SK2571 500 2SK1610 2SK2383 550 2SK2047 max. ( ü )


    OCR Scan     		PDF O-22C O-220E 2SK1605 2SK1606 2SK2123 2SK2124 2SK1607 2SK2032 2SK2571 2SK2509 2sk2324 2SK2127 2sk2323