SPT0305
Abstract: BST50 SMD MARKING CODE RAC HYB3118165 HYB5118165 5118165BSJ-60 5118165BSJ
Text: 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:
|
Original
|
PDF
|
16-Bit
5118165BSJ/BST-50/-60
3118165BSJ/BST-50/-60
HYB5118165
HYB3118165
P-TSOPII-50/44-1
GPX05958
SPT0305
BST50
SMD MARKING CODE RAC
HYB3118165
HYB5118165
5118165BSJ-60
5118165BSJ
|
V53C318160A
Abstract: No abstract text available
Text: V53C318160A 3.3 VOLT 1M X 16 FAST PAGE MODE CMOS DYNAMIC RAM MOSEL VITELIC HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tRAC 50 ns 60 ns 70 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns 35 ns Min. Fast Page Mode Cycle Time, (tPC) 35 ns 40 ns
|
Original
|
PDF
|
V53C318160A
16-bit
cycles/16
cycles/256
V53C318160A
|
V53C316165A
Abstract: No abstract text available
Text: V53C316165A 3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM MOSEL VITELIC HIGH PERFORMANCE 50 60 Max. RAS Access Time, tRAC 50 ns 60 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC) 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)
|
Original
|
PDF
|
V53C316165A
16-bit
cycles/64
42-pin
50/44-pin
V53C316165A
|
HYB3116165BSJ
Abstract: HYB3118165 HYB3118165BSJ HYB5118165 P-TSOP 5118165BSJ-60
Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ-50/-60 HYB5116165BSJ-50/-60 HYB3116165BSJ/(BST(L)-50/-60 3118165BSJ/(BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature
|
Original
|
PDF
|
16-Bit
HYB5116165BSJ-50/-60
HYB3116165BSJ/
HYB3118165BSJ/
HYB5116165
HYB3116165
HYB5118165
HYB3118165
HYB3116165BSJ
HYB3118165
HYB3118165BSJ
HYB5118165
P-TSOP
5118165BSJ-60
|
Q67100-Q1192
Abstract: WL3 MARKING BST60
Text: HYB3116165BSJ/BST L -50/-60/-70 3118165BSJ/BST(L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature
|
Original
|
PDF
|
HYB3116165BSJ/BST
HYB3118165BSJ/BST
16-Bit
HYB3118165BSJ/BST-50)
HYB3118165BSJ/BST-60)
GPJ05853
HYB3116
165BSJ/BST
P-SOJ-42
Q67100-Q1192
WL3 MARKING
BST60
|
smd code marking wl5
Abstract: Q67100-Q1188 BST60
Text: HYB3116165BSJ/BST L -50/-60/-70 3118165BSJ/BST(L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature
|
Original
|
PDF
|
HYB3116165BSJ/BST
HYB3118165BSJ/BST
16-Bit
HYB3118165BSJ/BST-50)
HYB3118165BSJ/BST-60)
GPJ05853
HYB3116
165BSJ/BST
P-SOJ-42
smd code marking wl5
Q67100-Q1188
BST60
|
V53C516165A
Abstract: No abstract text available
Text: V53C516165A 5 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM MOSEL VITELIC HIGH PERFORMANCE 50 60 Max. RAS Access Time, tRAC 50 ns 60 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC) 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)
|
Original
|
PDF
|
V53C516165A
16-bit
cycles/64
42-pin
50/44-pin
V53C516165A
|
V53C318165A
Abstract: No abstract text available
Text: V53C318165A 3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM MOSEL VITELIC HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tRAC 50 ns 60 ns 70 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)
|
Original
|
PDF
|
V53C318165A
16-bit
cycles/16
42-pin
V53C318165A
|
d8430
Abstract: 18165BSJ-60 BST60
Text: SIEM EN S 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 3116165BSJ/BST(L)-5Q/-60/-70 HYB 3118165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 *C operating temperature • Performance: -50 -60 ^RAC RAS access time
|
OCR Scan
|
PDF
|
16-Bit
3116165BSJ/BST
-5Q/-60/-70
3118165BSJ/BST
3118165BSJ/BST-50)
3118165BSJ/BST-60)
3118165BSJ/BST-70)
3116165BSJ/BST-50)
3116165BSJ/BST-60)
d8430
18165BSJ-60
BST60
|
SIEMENS BST
Abstract: SIEMENS BSt L 45 100 BST50 code marking rah SIEMENS BST 10 20 Q1107 SIEMENS BST H siemens BST H 04 40 SIEMENS BST P SIEMENS BST L
Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:
|
OCR Scan
|
PDF
|
16-Bit
HYB5118165
HYB3118165
5118165BSJ/BST-50/-60
3118165BSJ/BST-50/-60
3118165BSJ/BST-50/-60
SIEMENS BST
SIEMENS BSt L 45 100
BST50
code marking rah
SIEMENS BST 10 20
Q1107
SIEMENS BST H
siemens BST H 04 40
SIEMENS BST P
SIEMENS BST L
|
SIEMENS BST 68
Abstract: BST50 3118165 SIEMENS BST Q
Text: SIEM EN S 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:
|
OCR Scan
|
PDF
|
16-Bit
5118165BSJ/BST-50/-60
3118165BSJ/BST-50/-60
HYB5118165
HYB3118165
P-TSOPII-50/44-1
GPX05958
SIEMENS BST 68
BST50
3118165
SIEMENS BST Q
|
SIEMENS BST
Abstract: SIEMENS BST t SIEMENS BST h 35 SIEMENS BST L 35 90 BST70 BST60
Text: SIEMENS 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 3116165BSJ/BST(L)-50/-60/-70 HYB 3118165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC
|
OCR Scan
|
PDF
|
16-Bit
3116165BSJ/BST
3118165BSJ/BST
3118165BSJ/BST-50)
3118165BSJ/BST-60)
165BSJ/BST
SIEMENS BST
SIEMENS BST t
SIEMENS BST h 35
SIEMENS BST L 35 90
BST70
BST60
|
Untitled
Abstract: No abstract text available
Text: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70
|
OCR Scan
|
PDF
|
P-SOJ-26/20-5
|
siemens 3ld 25
Abstract: TA5C HYB3116405BT
Text: r i E u r f t k c j i ç m ç r a j INFORMATION NOTE F o u rth G e n e r a t io n 16M - D R A M s C h a ra c te risa tio n D ata 3 .3 V p ro d u cts "f n c I r^ C J mftjT0M11.DOC SiEM ENS _ 3,3V lé M - D H A M s
|
OCR Scan
|
PDF
|
inioifiM11
16M-DRAMs
siemens 3ld 25
TA5C
HYB3116405BT
|
|
|
Untitled
Abstract: No abstract text available
Text: SIEMENS 1 M x 1 6 - B it D y n a m ic R A M H Y B 5 1 1 6 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 1 k & 4 k R e fre s h H Y B 5 1 1 8 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 H y p e r P a g e M o d e - E D O Prelim inary Inform ation max. 495 active mW ( HYB3116165BSJ-60)
|
OCR Scan
|
PDF
|
HYB3116165BSJ-60)
HYB3116165BSJ-70)
HYB5118165BSJ
HYB5116165BSJ
35b05
DG71b30
|
Untitled
Abstract: No abstract text available
Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: ÍRA C RAS access time
|
OCR Scan
|
PDF
|
16-Bit
5116165BSJ
5118165BSJ
5118165BSJ-50)
5118165BSJ-60)
5118165BSJ-7EDO
E35hQ5
165BSJ-50/-60/-70
16-EDO
|
Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC V53C318160A 3.3 VOLT 1M X 16 FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tpj^c 50 ns 60 ns 70 ns Max. Column Address Access Time, (tcAA) 25 ns 30 ns 35 ns Min. Fast Page Mode Cycle Time, (tpc) 35 ns
|
OCR Scan
|
PDF
|
V53C318160A
16-bit
cycles/16
cycles/256
42-Pin
50/44-Pin
|
3165805AT-60
Abstract: Q67100
Text: SIEMENS Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Ordering Code Page HYB 3116160BSJ-50 on request 618 HYB 311616QBSJ-60 on request 618 HYB 3116160BSJ-70 on request 618 HYB 3116160BST-50 on request 618 HYB 3116160BST-60
|
OCR Scan
|
PDF
|
3116160BSJ-50
311616QBSJ-60
3116160BSJ-70
3116160BST-50
3116160BST-60
3116160BST-70
3116165BSJ-50
3116165BSJ-60
3116165BSJ-70
3116165BST-50
3165805AT-60
Q67100
|
SIEMENS BST 68
Abstract: SIEMENS BST P 45 115 SIEMENS BST P SIEMENS BST t SIEMENS BST f 04 SIEMENS BST 5118165 SIEMENS BST Q SIEMENS BST N 35 SIEMENS BST G 03 60
Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ-50/-60 HYB5116165BSJ-50/-60 HYB3116165BSJ/(BST(L)-50/-60 3118165BS J/(BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature
|
OCR Scan
|
PDF
|
16-Bit
HYB5116165BSJ-50/-60
HYB3116165BSJ/
HYB3118165BS
P-SOJ-42
P-TSOPI1-50/44
400mil)
SIEMENS BST 68
SIEMENS BST P 45 115
SIEMENS BST P
SIEMENS BST t
SIEMENS BST f 04
SIEMENS BST
5118165
SIEMENS BST Q
SIEMENS BST N 35
SIEMENS BST G 03 60
|
Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC V53C318165A 3.3 VOLT 1M X 16 ED O P A G E M O D E CM O S DYNAM IC R A M HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tpj^c 50 ns 60 ns 70 ns Max. Column Address Access Time, (tcAA) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, (tpc)
|
OCR Scan
|
PDF
|
V53C318165A
16-bit
42-Pin
50/44-Pin
|
HYB39S16400T
Abstract: hyb39s16800t 314100BJBJL 3165805AT Siemens Multibank DRAM HYB5118160BS 4K x 1 DRAM
Text: SIEMENS 4M Product View 4M Product View 4M DRAM 1M X 4 4M X 1 256kX 16 HVB 314100BJ/BJL HYB 314400BJ/BJL HYB314405BJ/BJL HYB 314171BJ/BJL HYB 314175BJ/BJL HYB 514100BJ/BJL HYB 514400BJ/BJL HYB 514405BJ/BJL HYB 314265BJ/BJL HYB 514171 BJ/BJL HYB 514175BJ/BJL
|
OCR Scan
|
PDF
|
256kX
314100BJ/BJL
314400BJ/BJL
HYB314405BJ/BJL
314171BJ/BJL
314175BJ/BJL
514100BJ/BJL
514400BJ/BJL
514405BJ/BJL
314265BJ/BJL
HYB39S16400T
hyb39s16800t
314100BJBJL
3165805AT
Siemens Multibank DRAM
HYB5118160BS
4K x 1 DRAM
|
5116165
Abstract: 5118165 EDO DRAM
Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 ÍR A C
|
OCR Scan
|
PDF
|
16-Bit
5116165BSJ
5118165BSJ
5118165BSJ-50)
5118165BSJ-60)
5118165BSJ-70)
5116165BSJ-50)
5116165BSJ-60)
165BSJ-50/-60/-70
5116165
5118165
EDO DRAM
|