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California Eastern Laboratories (CEL) NE3210S01 RF MOSFET GAAS HJ-FET 2V SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE3210S01					1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE3210S01-T1B RF MOSFET GAAS HJ-FET 2V SMD
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DigiKey	NE3210S01-T1B	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
E-T-A 3120-F321-P7T1-W19XG3-X3210-S01BM-7A CIR BRKR THRM 7A 250VAC 50VDC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	3120-F321-P7T1-W19XG3-X3210-S01BM-7A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
NEC Electronics Group NE3210S01-T1B
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Bristol Electronics	NE3210S01-T1B		75			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NEC Electronics Group NE3210S01
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	NE3210S01		75			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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3210S01 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
22S21 Abstract: NE329 NEC Ga FET marking A Text: SUPER LOW NOISE HJ FET 3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 2.0 ± 0.2 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm	Original	NE3210S01 NE3210S01 3210S01 24-Hour 22S21 NE329 NEC Ga FET marking A	PDF
3210S01 Abstract: ne3210s01 NE3210S01-T1B NE3210S01-T1 NE3210 Text: SUPER LOW NOISE HJ FET 3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz 2.0 – 0.2 • GATE LENGTH: LG ≤ 0.20 µm 2. 1 – • GATE WIDTH: WG = 160 µm	Original	NE3210S01 NE3210S01 3210S01 NE3210S01-T1B NE3210S01-T1 NE3210	PDF
NE3210S01-T1B Abstract: ne3210s01 nec 4814 3210S01 NEC 7812 NE3210S01-T1 ne 7812 NEC Ga FET marking k Text: NEC's SUPER LOW NOISE HJ FET 3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz 2.0 ± 0.2 • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ±	Original	NE3210S01 NE3210S01 3210S01 36e-12 014e-12 NE3210S01-T1B nec 4814 NEC 7812 NE3210S01-T1 ne 7812 NEC Ga FET marking k	PDF
NE3210S01 Abstract: nec 4814 NEC Ga FET marking A 4524 kf NE3210S01-T1 Text: SUPER LOW NOISE HJ FET 3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 2.0 ± 0.2 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm	Original	NE3210S01 NE3210S01 3210S01 24-Hour nec 4814 NEC Ga FET marking A 4524 kf NE3210S01-T1	PDF
NE3210S01 Abstract: 3210S01 NE3210S01-T1B NE3210S01-T1 ne 7812 d 2689 marking so1 Text: NEC's SUPER LOW NOISE HJ FET 3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz 2.0 ± 0.2 • GATE LENGTH: LG ≤ 0.20 m 2. 1 ±	Original	NE3210S01 NE3210S01 3210S01 4e-12 12e-12 36e-12 014e-12 NE3210S01-T1B NE3210S01-T1 ne 7812 d 2689 marking so1	PDF
150J10 Abstract: No abstract text available Text: SUPER LOW NOISE HJ FET 3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz 2.0 ± 0.2 • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm	Original	NE3210S01 NE3210S01 3210S01 1e-14 4e-12 12e-12 36e-12 014e-12 150J10	PDF
3210S01 Abstract: NE3210S01-T1B nec 0882 NEC Ga FET marking A NE3210S01-T1 150J10 Text: SUPER LOW NOISE HJ FET 3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 2.0 ± 0.2 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm	Original	NE3210S01 NE3210S01 3210S01 24-Hour NE3210S01-T1B nec 0882 NEC Ga FET marking A NE3210S01-T1 150J10	PDF