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NEC Electronics Group NE32984D-T1A
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NE329 Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
NE32900	NEC	Semiconductor Selection Guide	Original	PDF
NE32900	NEC	NONLINEAR MODEL	Original	PDF
NE32984D	NEC	N-CHANNEL HJ-FET	Original	PDF
NE32984D-S	NEC	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET	Original	PDF
NE32984D-SL	NEC	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET	Original	PDF
NE32984D-T1	NEC	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET	Original	PDF
NE32984D-T1	NEC	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET	Original	PDF
NE329S01	NEC	N-CHANNEL HJ-FET	Original	PDF
NE329S01	NEC	SUPER LOW NOISE HJ FET	Original	PDF
NE329S01	NEC	Semiconductor Selection Guide	Original	PDF
NE329S01-T1	NEC	SUPER LOW NOISE HJ FET	Original	PDF
NE329S01-T1B	NEC	SUPER LOW NOISE HJ FET	Original	PDF

NE329 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NE329S01 Abstract: NE329S01-T1 NE329S01-T1B Text: SUPER LOW NOISE HJ FET NE329S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz 24 Noise Figure, NF dB • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz • GATE LENGTH: 0.2 µm • GATE WIDTH: 200 µm	Original	NE329S01 NE329S01 NE329S01-T1 NE329S01-T1B 24-Hour NE329S01-T1 NE329S01-T1B	PDF
Untitled Abstract: No abstract text available Text: NONLINEAR MODEL SCHEMATIC NE329S01 CGD_PKG 0.001pF Ldx DRAIN Q1 Lgx GATE 0.56nH Rdx 6 ohms Rgx 0.64nH 6 ohms Lsx 0.06nH CGS_PKG 0.055pF CDS_PKG 0.05PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1	Original	NE329S01 001pF 055pF 1e-14 3e-12 13e-12 42e-12 023e-12 24-Hour	PDF
FET model Abstract: NE32900 Text: NONLINEAR MODEL SCHEMATIC NE32900 Ldx DRAIN 0.28nH Q1 Lgx GATE 0.35nH Lsx 0.025nH SOURCE FET NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units VTO -0.825 RG 7 time seconds VTOSC RD 4 capacitance farads ALPHA 7 RS 4 inductance	Original	NE32900 025nH 1e-14 3e-12 095e-12 42e-12 023e-12 24-Hour FET model NE32900	PDF
NE32984D Abstract: NE32984D-S NE32984D-SL NE32984D-T1 K 3264 fet Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 1.0 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE	Original	NE32984D NE32984D NE32984D-S NE32984D-T1 NE32984D-SL 84D-SL 24-Hour NE32984D-S NE32984D-SL NE32984D-T1 K 3264 fet	PDF
NEC D288 Abstract: d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116 Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent	Original	NE32984D NE32984D NEC D288 d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116	PDF
D2504 transistor Abstract: d636 transistor transistor D450 transistor d525 d1944 d1405 transistor transistor d412 transistor D454 NF 817 NE329S01 Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent low	Original	NE329S01 NE329S01 NE329S01-T1 D2504 transistor d636 transistor transistor D450 transistor d525 d1944 d1405 transistor transistor d412 transistor D454 NF 817	PDF
NEC D74 Abstract: transistor D113 NEC D76 NE32900 nec, hetero junction transistor 4560d GHz Power FET low noise, hetero junction fet NEC D70 Text: DATA SHEET PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped	Original	NE32900 NE32900 NEC D74 transistor D113 NEC D76 nec, hetero junction transistor 4560d GHz Power FET low noise, hetero junction fet NEC D70	PDF
low noise, hetero junction fet Abstract: NE32984D NE32984D-S NE32984D-T1 IS21S Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE	Original	NE32984D NE32984D NE32984D-S NE32984D-T1 24-Hour low noise, hetero junction fet NE32984D-S NE32984D-T1 IS21S	PDF
22S21 Abstract: NE329 NEC Ga FET marking A Text: SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 2.0 ± 0.2 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm	Original	NE3210S01 NE3210S01 3210S01 24-Hour 22S21 NE329 NEC Ga FET marking A	PDF
micro servo 9g Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518 Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call	Original	V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518	PDF
NE32900 Abstract: 4560d Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
nec 151 Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900 Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.	OCR Scan	NE32900 NE32900 nec 151 transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET IV IF f / HETERO j u n c t io n f ie l d e f f e c t t r a n s is t o r / NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION N E 3 29 00 is H etero J u n ctio n F E T chip th a t utilizes the hetero ju n ctio n betw een S i-d op ed A IG aA s and un do pe d	OCR Scan	NE32900	PDF
Untitled Abstract: No abstract text available Text: NEC SUPER LOW NOISE HJ FET FEATURES NE329S01 & a s s o c ia t e d GAIN vs. FREQUENCY n o is e f ig u r e -• SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz • HIGH ASSOCIATED GAIN:	OCR Scan	NE329S01 NE329S01 Rn/50 NE329S01-T1 NE329S01-T1B	PDF

U/25/20/TN26/15/850/NE32984D Abstract: No abstract text available Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vd s b 2V , Io s - 1 0 mA FEATURES • VERY LOW NOISE FIGURE: 0.40 dB Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz m TJ • Lg S 0 .2 0 \|im , W g = 2 0 0 \|u n	OCR Scan	NE32984D NE32984D NE32984D-S NE32984D-T1 NE32984D-SL 84D-SL 24-Hour U/25/20/TN26/15/850/NE32984D	PDF
Transistor NEC K 3654 Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS	OCR Scan	NE32984D NE32984D NE32984D-T1A NE32984D-SL NE32984D-T1 Transistor NEC K 3654 NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V	PDF
NEC Ga FET marking L Abstract: U/25/20/TN26/15/850/NE32984D Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm	OCR Scan	NE32984D NE32984D NE32984D-SL NE32984Dr NEC Ga FET marking L U/25/20/TN26/15/850/NE32984D	PDF
Untitled Abstract: No abstract text available Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.40 dB Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz m • Lg < 0.20 ^m, WG = 200 \im	OCR Scan	NE32984D NE32984D NE32984D-S NE32984D-T1 24-Hour	PDF
5282 F 1349 Abstract: No abstract text available Text: _ DATA SHEET_ IV IF f * / h e t e r o j u n c t io n f ie l d e f f e c t t r a n s is t o r / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET D ESC R IPTIO N The NE329S01 is a Hetero Junction FET that utilizes the	OCR Scan	NE329S01 NE329S01 Rn/50 5282 F 1349	PDF
840-SL Abstract: NE32984D U/25/20/TN26/15/850/NE32984D Text: NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED FEATURES GAIN v« FRFOMFWrV Vos = 2 V, lo i a 10 IÎ1A • VERY LOW NOISE FIGURE: 0.40 d 8 Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 0 8 Typical at 12 GHz ai • La i 0.20 pm . W o • 200 nm	OCR Scan	NE32984D NE329640 NE329640-S NE329Ã 40-T1 NE32964D-SI 840-SL 840-SL NE32984D U/25/20/TN26/15/850/NE32984D	PDF
Untitled Abstract: No abstract text available Text: SUPER LOW NOISE HJ FET FEATURES NE329S01 N O IS E F IG U R E & A S S O C IA T E D G A IN vs. F R E Q U E N C Y S U P E R L O W N O IS E F IG U R E : 0.35 dB Typ at f = 12 GHz H IG H A S S O C IA T E D G A IN : m T> < 3 1 3 .0 d B T y p a tf = 12 GHz G A T E L E N G TH : 0.2 jim	OCR Scan	NE329S01 NE329S01 NE329S01-T1 NE329S01-T1B 24-Hour	PDF
0747 Abstract: NE32900 Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE32900 & a s s o c ia t e d GAIN vs. FREQUENCY n o is e f ig u r e -• SUPER LOW NOISE FIGURE: 0.35 d B T y p a tf = 12 GHz • HIGH ASSOCIATED GAIN:	OCR Scan	NE32900 NE32900 1e-14 3e-12 095e-12 42e-12 023e-12 0747	PDF
NEC Ga FET marking L Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking Text: _ DATA SHEET_ M F P / HETERO JUNCTION FIELD EFFECT TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm	OCR Scan	NE329S01 NE329S01 NE329S01-T1 NE329S01-T1B NEC Ga FET marking L lg TYP 513 309 low noise FET NEC U SAAI Marking	PDF
NE32900 Abstract: No abstract text available Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32900 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES SUPER LOW NOISE FIGURE: 0.35 dB T yp at f = 12 G Hz HIGH ASSOCIATED GAIN: m T> < 1 3 . 0 d B T y p a t f = 12 G Hz GATE LENGTH: 0.2 jim 3 ro GATE W IDTH: 200 jim	OCR Scan	NE32900 24-Hour NE32900	PDF

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NEC Electronics Group NE32984D-T1A

NE329 Datasheets (12)

NE329 Datasheets Context Search

NE329S01

Untitled

FET model

NE32984D

NEC D288

D2504 transistor

NEC D74

low noise, hetero junction fet

22S21

micro servo 9g

NE32900

nec 151

Untitled

Untitled

U/25/20/TN26/15/850/NE32984D

Transistor NEC K 3654

NEC Ga FET marking L

Untitled

5282 F 1349

840-SL

Untitled

0747

NEC Ga FET marking L

NE32900