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Glenair Inc 943-001M13-35NS Circular MIL Spec Connector CONNECTING DEVICES - SAV-CON CONNECTORS
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Mouser Electronics	943-001M13-35NS					1 $5753.77 10 $5753.77 100 $5753.77 1000 $5753.77 10000 $5753.77	Get Quote
Newark	943-001M13-35NS	Bulk			1	1 $5242.43 10 $2389.31 100 $1405.48 1000 $1405.48 10000 $1405.48	Buy Now
SMC Corporation of America KQ2L03-35NS 1-Touch Fitting, Union Elbow,5/32-in Tube,1/4NPT Dia, Brass/Electroless Ni, w/Seal \| SMC Corporation KQ2L03-35NS
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RS	KQ2L03-35NS	Bulk	12		1	1 $3.47 10 $3.47 100 $3.47 1000 $3.47 10000 $3.47	Buy Now
SMC Corporation of America KQ2Y03-35NS Fitting, male run tee, 5/32"OD, 1/4NPT \| SMC Corporation KQ2Y03-35NS
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RS	KQ2Y03-35NS	Bulk	10		1	1 $4.91 10 $4.91 100 $4.91 1000 $4.91 10000 $4.91	Buy Now
SMC Corporation of America KQ2S13-35NS FITTING, HEX HD MALE CONN, 1/4NPT NKL PL BR THRD W/SEALANT, FOR 1/2 \| SMC Corporation KQ2S13-35NS
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RS	KQ2S13-35NS	Bulk	8		1	1 $6.86 10 $6.86 100 $6.86 1000 $6.86 10000 $6.86	Buy Now
SMC Corporation of America KQ2H03-35NS One-Touch Fitting, 5/32 in. Tube Size, NPT Thread, KQ2 Series \| SMC Corporation KQ2H03-35NS
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RS	KQ2H03-35NS	Bulk	7		1	1 $2.51 10 $2.51 100 $2.51 1000 $2.51 10000 $2.51	Buy Now

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335NS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: APT26F120B2 APT26F120L 1200V, 27A, 0.58Ω Max, trr ≤335ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft	Original	APT26F120B2 APT26F120L 335ns O-264 O-247	PDF
APT26F120B2 Abstract: APT26F120L MIC4452 Text: APT26F120B2 APT26F120L 1200V, 27A, 0.58Ω Max, trr ≤335ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft	Original	APT26F120B2 APT26F120L 335ns O-264 APT26 O-247 APT26F120B2 APT26F120L MIC4452	PDF
APT26F120B2 Abstract: APT26F120L MIC4452 DTA105 Text: APT26F120B2 APT26F120L 1200V, 26A, 0.65Ω Max, trr ≤335ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft	Original	APT26F120B2 APT26F120L 335ns O-247 APT26F120B2 APT26F120L MIC4452 DTA105	PDF
BERULUB FR 16 B Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram Text: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power	Original	IXBH40N160, BERULUB FR 16 B circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram	PDF
IXAN0017 Abstract: 0017 spot welder circuit diagram IXBH40N160 MOSFET 1600v 100A IXLH45N160 high frequency welder circuit diagram TC4431 application MOSFET 1200v 30a 108nC Text: New 1600V BIMOSFET Transistors Open Up New Applications IXAN0017 by Ralph E. Locher IXYS Corporation Santa Clara, CA Introduction There are many applications today using high voltage MOSFETs and IGBTs, which would benefit from a higher voltage part. Examples are	Original	IXAN0017 IXBH40N160, IXAN0017 0017 spot welder circuit diagram IXBH40N160 MOSFET 1600v 100A IXLH45N160 high frequency welder circuit diagram TC4431 application MOSFET 1200v 30a 108nC	PDF
APT26F120B2 Abstract: APT26F120L MIC4452 335ns Text: APT26F120B2 APT26F120L 1200V, 26A, 0.65Ω Max, trr ≤335ns N-Channel FREDFET T-Max Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft	Original	APT26F120B2 APT26F120L 335ns O-247 APT26F120B2 APT26F120L MIC4452 335ns	PDF
LE2-20 Abstract: le11 Text: ISOLATION TRANSFORMERS RESISTORS CAPACITORS COILS DELAY LINES SERIES ‘LE’ LAN-ETHERNET APPLICATIONS FEATURES 0.018±0.008 [.457±0.076] 15 13 12 10 9 . . . . . . . . . . . . . . . . . . 16 1 2 4 5 7 8 0.200 [5.08] [17.78±0.254] 7 EQUAL SPACES 0.100” ± 0.010	Original	16-pin 14-pin LE1-20 LE1-35 LE1-50 LE1-75 LE1-100 LE1-200 LE2-20 LE2-50 le11	PDF
BERULUB FR 16 Abstract: ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B Text: Application Notes & Technical Information Volume 2 Volume 1 Contents Title Page Standard IGBT "G" Series M1 - 2 What is a HiPerFET Power Mosfet? M1 - 3 New 1600 V BIMOSFET Transistors Open up New Appl. M1 - 5 Comparative Performance of BIMOSFET in FLY Back Converter Circuits	Original	ISOPLUS247 UC3854A UC3854B DN-44, TDA4817 BERULUB FR 16 ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B	PDF
Untitled Abstract: No abstract text available Text: A D S -9 2 7 1MHz, 14-Bit, Low-Power Sampling A/D Converter INNOVATION a n d EXCELLENCE FEATURES • • • • • • • • 14-Bit resolution 1MHz sampling rate No missing codes Functionally complete Small 24-pin DDIP Low power, 1.95 Watts maximum Operates from ±15V or ±12V supplies	OCR Scan	14-Bit, 14-Bit 24-pin S-927 ADS-927 -80dB DS-927 DS-0264B	PDF
HM4716 Abstract: HM4864P2 Text: H M 4 8 6 4 - 2 , H M 4 8 6 4 - 3 - HM4864P-2, HM4864P-3 6 5 5 3 6 -word x 1-bit Dynamic Random A cce ss Memory The HM4864 is a 65,536-words by 1-bit, MOS random access memory circuit fabricated with H IT A C H I'S double-poly N-channel H M 4 86 4 -2 , H M 4864-3	OCR Scan	HM4864P-2, HM4864P-3 HM4864 536-words HM4716 HM4864P2	PDF
2SK1500 Abstract: 2SK1502 2SK1535 2SK1537 2SK1513 235n 2501L 2SK1501 2SK1531 2SK1438 Text: - 108 - ft m % ± £ m & m £ A V it ft K V, tt m * (V ft * ffi X P d/P c h £ * (W) I* (A) less (max) (A) Vg s (V) (Ta=25T) 1Ï m S Id s (min) (max) V d s (A) (A) (V) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s (S) (V) Id (A) 2SK1497	OCR Scan	2SK1497 2SK1438 2SK1499 2SK1500 2SK1501, 1501-Z 580nstyp 2SK1526 235ns, 2SK1502 2SK1535 2SK1537 2SK1513 235n 2501L 2SK1501 2SK1531	PDF
2SK520 Abstract: 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43 Text: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . (V) «• m të P d /P c h * * (A) * * (W) Ig s s (max) (A) Vg s (V) ^ W (Ta=25°C) te (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) Id (A) Q (min) (S) 1 I >>60 B -— ' ü Vd s (V) Id	OCR Scan	2SJ299 2SJ300 2SJ317 2SK11 2SK12 2SK521 100MHZ 2SK522 20mVmax 2SK523 2SK520 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43	PDF
upd4265 Abstract: 4265 AAFW Text: SEC /iP D 4 2 6 5 6 5 ,5 3 6 x 1 -B IT D Y N A M IC CMOS RAM NEC Electronics Inc. Revision 1 Pin Configuration D e scrip tio n T h e N E C /UPD4265 is a 6 5 ,5 3 6 -w o rd b y 1 -b it d y n a m ic C M O S R a n d o m A c c e s s M e m o ry R A M d e s ig n e d to	OCR Scan	UPD4265 536-word PD4265 xPD4265 4265 AAFW	PDF
HN462532G Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4 Text: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .	OCR Scan		PDF

2SK30 Abstract: 2sK30 fet 2SK19TM 2SK34 FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33 Text: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . * * (V) «• m të P d /P c h (A) * * (W) Ig s s (max) (A) Vg s (V) ^ te W (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (max) V d s (V) (A) (A) Id (A) Q (min) (S) 1 I >>60 B -—' ü Vd s (V) Id	OCR Scan	2SJ299 2SJ300 2SJ317 2SK11 2SK12 10DGS, 2SK41NP 2SK25 2SK30ATM 2SK30 2SK30 2sK30 fet 2SK19TM 2SK34 FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33	PDF
UPD4265 Abstract: No abstract text available Text: SEC /¿PD4265 6 5 ,5 3 6 x 1 -BIT DYNAMIC CMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The NEC /UPD4265 is a 65,536-word by 1-bit d ynam ic CM O S Random Access M em ory RAM designed to operate from a single + 5 V p ow er supply. The	OCR Scan	uPD4265 536-word PD4265 PD4265	PDF
2SK68A Abstract: 2SK44 2SK34 2SK60 2sK30 fet FET 2SK23A 2sk43 2SK30 2SK68 2SK44SP Text: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m * * (A) ^ m P d /P c h . (V) «• të * * (W) Ig s s (max) (A) Vg s (V) (Ta=25°C) te W (min) (max) Vd s (V) (V) (V) (min) (max) V d s (V) (A) (A) Id (A) Q (min) (S) 1 I >>60 B -—' ü Vd s (V) Id	OCR Scan	2SJ299 2SJ300 2SJ317 2SK11 2SK12 2SK65 2SK66 2SK1109 2SK67 2SK68A 2SK44 2SK34 2SK60 2sK30 fet FET 2SK23A 2sk43 2SK30 2SK68 2SK44SP	PDF
HM4864P-2 Abstract: HM4864-2 HM4864-3 HM4864P-3 HM4816 20 led VU meter HM4716 cel hitachi mmh3681-01 HM4864 Text: H M 4 8 6 4 - 2 , H M 4 8 6 4 - 3 - HM4864P-2, HM4864P-3 6 5 5 3 6 - word x 1 -b it Dynamic Random Access Memory The H M 4864 is a 65,536-words by 1-bit, MOS random access mem ory c irc u it fabricated w ith H ITAC H I'S double-poly N-channel silicon gate process fo r high performance and high fu n ction a l	OCR Scan	HM4864-2, HM4864-3- HM4864P-2, HM4864P-3 65536-word HM4864 536-words HM4864P-2 HM4864-2 HM4864-3 HM4864P-3 HM4816 20 led VU meter HM4716 cel hitachi mmh3681-01	PDF
IH200 Abstract: No abstract text available Text: O0 O ISOLATION TRANSFORMERS SERIES ‘LE’ LAN-ETHERNET APPLICATIONS • Economical ■ Low leakage inductance and interwinding capacitance ■ Fast rise time 3nSec typ. ■ Low profile 16-pin DIP 14-pin avail. ■ Surface Mount design available ■ Choice of turns ratio, 1:1 or 2:1	OCR Scan	16-pin 14-pin LE1-20 LE1-35 LE1-50 LE1-100 LE1-200 LE2-20 LE2-50 LE2-100 IH200	PDF
LE2-20 Abstract: No abstract text available Text: ISOLATION TRANSFORMERS SERIES ‘LE’ LAN-ETHERNET APPLICATIONS 0.M5MAX 22 5 Economical Low leakage inductance and interwinding capacitance Fast rise time 3nSec typ. Low profile 16-pin DIP (14-pin avail.) Surface Mount design available Choice of turns ratio, 1:1 or 2:1	OCR Scan	16-pin 14-pin LE1-20 LE1-35 LE1-50 LE1-75 LE1-100 LE1-200 LE2-20 LE2-50	PDF
Untitled Abstract: No abstract text available Text: ISOLATION TRANSFORMERS SERIES ‘LE' LAN-ETHERNET APPLICATIONS Primary Primary DCR Max. Indue.* ET Constant PRI SEC (±20%) (V-fiS Min) RCD Type Turns Ratio (±5%) LE1 -20 LE1-35 LE1-50 LE1-75 LE1-100 LE1 -200 1:1 1:1 1:1 1:1 1:1 1:1 20/l/H 35/jH 50/l/H	OCR Scan	LE1-35 LE1-50 LE1-75 LE1-100 35/jH 75//H 100//H 200fjH LE2-20 LE2-50	PDF
Untitled Abstract: No abstract text available Text: ISOLATION TRANSFORMERS SERIES ‘LE’ LAN-ETHERNET APPLICATIONS Economical Low leakage inductance and interwinding capacitance Fast rise time 3nSec typ. Low profile 16-pin DIP 14-pin avail. Surface Mount design available Choice of turns ratio, 1:1 or 2:1	OCR Scan	16-pin 14-pin LE1-20 LE1-35 LE1-50 LE1-75 LEI-100 LE1-200 75/iH 10tyiH	PDF
HM4864P-2 Abstract: HM4864-2 HM4864-3 HM4864P-3 HM4816A HM4716 hm4816A ram HM4864P HM4864 HM4816 Text: H M 4 8 6 4 - 2 , H M 4 8 6 4 - 3 - HM4864P-2, HM4864P-3 6 5 5 3 6 -word x 1-bit Dynamic Random A ccess Memory The H M 4864 is a 65,536-words by 1-bit, M O S random access memory circuit fabricated w ith H IT A C H I'S double-poly N-channel silicon gate process for high performance and high functional	OCR Scan	HM4864-2, HM4864-3- HM4864P-2, HM4864P-3 65536-word HM4864 536-words HM4864P-2 HM4864-2 HM4864-3 HM4864P-3 HM4816A HM4716 hm4816A ram HM4864P HM4816	PDF
LE2-20 Abstract: le2 20 LE2-50 LE135 le220 Text: ISOLATION TRANSFORMERS SERIES ‘LE’ LAN-ETHERNET APPLICATIONS Economical Low leakage inductance and interwinding capacitance Fast rise time 3nSec typ. Low profile 16-pin DIP 14-pin avail. Surface Mount design available Choice of turns ratio, 1:1 or 2:1	OCR Scan	16-pin 14-pin B85MAX LE1-20 LE1-35 LE1-100 LE1-200 LE2-20 LE2-50 LE2-100 le2 20 LE135 le220	PDF

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335NS Search Results

335NS Price and Stock

Glenair Inc 943-001M13-35NS

SMC Corporation of America KQ2L03-35NS

SMC Corporation of America KQ2Y03-35NS

SMC Corporation of America KQ2S13-35NS

SMC Corporation of America KQ2H03-35NS

335NS Datasheets Context Search

Untitled

APT26F120B2

APT26F120B2

BERULUB FR 16 B

IXAN0017

APT26F120B2

LE2-20

BERULUB FR 16

Untitled

HM4716

2SK1500

2SK520

upd4265

HN462532G

2SK30

UPD4265

2SK68A

HM4864P-2

IH200

LE2-20

Untitled

Untitled

HM4864P-2

LE2-20