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    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,


    OCR Scan     		PDF HY51V4403B 050f1 1AC1S-00-MAY94 HY51V4403BJ HY51V4403BU HYS1V4403BSU

    Untitled

    Abstract: No abstract text available
    Text: HY62256A Series •HYUNDAI 32K X 8-blt CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY62256A speed-55/70/85/100ns 1DC01-11-MAY94 HY62256AP HY62256ALP HY62256ALLP

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI H Y 5 1 1 6 1 6 4 B S e r ie s 1Mx 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5116164B 16-bit. HY5116164B 1ADS7-10-MAY95 HY5116164BJC HY5116164BSLJC HY5116164BTC

    DC-06

    Abstract: No abstract text available
    Text: " H Y U N D A I H Y 6 2 V 2 5 6 B S e r ie s _ 32K x 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62V256B is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V256B has a data retention mode that


    OCR Scan     		PDF HY62V256B 55/70/85/100ns 0319B DC06-11-MAY95 HY82V256BLP HY62V256BU HY62V256BLT1 DC-06

    HYM532220SLTW

    Abstract: HYM532220 HY5118160
    Text: •HYUNDAI HYM532220 W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220 is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for each


    OCR Scan     		PDF HYM532220 32-bit HY5118160 HYM532220W/SLW/TW/SLTW HYM532220WG/SLWG 250t6 4b75Dflû 1CD07-10-DEC94 HYM532220SLTW