Untitled
Abstract: No abstract text available
Text: "HYUNDAI HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mourtted for
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HYM532220A
32-bit
HY5118160B
HYM532220AW/SLW/TW/SLTW
HYM532220AWG/SLWG
880mW
825mW
70MIN.
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Untitled
Abstract: No abstract text available
Text: "H YU NDA I HYM532220A E-Series 2M x 32-bit CMOS DRAM MODULE DESCRIPTION The HVM532220A is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72pin glass-epoxy printed circuit board. 0.22 iFdecoupling
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HYM532220A
32-bit
HVM532220A
HY5117800B
72pin
HYM532220AE/ASLE/ATE/ASLTE
HYM532220AEG/ASLEG/ATEG/ASLTEG
DQ0-DQ31)
1CE13-10-DEC
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Untitled
Abstract: No abstract text available
Text: HYM532220 X-Series “H Y U N D A I 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The H Y M 532 220 is a 2M x 3 2 -bit Fast page m ode C M O S DRAM m odule consisting of four H Y 5 1 18160 in 44/50 pin TS O P II on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.2 2|iF decoupling capacitor is m ounted
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HYM532220
32-bit
532220TX
DQ0-DQ31)
1DD01-10-FEB95
HYMS32220/SL
HYM532220TXG
HYM532220SLTXG
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HYM532220WG
Abstract: HYM532220 9 bit SIMM pins
Text: -HYUNDAI HYM532220 W-Series 2M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220 is a 2M x 32-bit Fast page m ode CMOS DRAM m odule consisting of four HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each
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HYM532220
32-bit
HY5118160
HYM532220W/SLW/TW/SLTW
HYM532220WG/SLWG
HYM532220/SL
HYM532220T/SLT
HYM532220WG
9 bit SIMM pins
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HYM532220WG70
Abstract: HYM532220W70 HYM532220 HY5118160 hym532220wg-70 hym532220w-70 000ws oec94 HYM53
Text: «HYUNDAI HYM532220 W-Series 2M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220 is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for each
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HYM532220
32-bit
HY5118160
HYM532220W/SLW/TW/SLTW
HYM532220WG/SLWG
050i1J7)
HVM532220T/SLT
Mb750fla
HYM532220WG70
HYM532220W70
hym532220wg-70
hym532220w-70
000ws
oec94
HYM53
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Untitled
Abstract: No abstract text available
Text: ‘ HYUNDAI HYM532220A E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast Page mode CMOS ORAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72 pin giass-epoxy printed circuit board. 0.22nFdecoupling
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HYM532220A
32-bit
HY5117800B
22nFdecoupling
HYM532220AE/ASLE/ATE/ASLTE
HYM532220AEG/ASLEG/ATEG/ASLTEG
l25f3
17lMIN.
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Untitled
Abstract: No abstract text available
Text: •'H Y U N D A I HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mourlted for
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PDF
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HYM532220A
32-bit
HY5118160B
HYM532220AW/SLW/TW/SLTW
HYM532220AWG/SLWG
880mW
825mW
770mW
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HYM532220SLTW
Abstract: HYM532220 HY5118160
Text: •HYUNDAI HYM532220 W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220 is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for each
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HYM532220
32-bit
HY5118160
HYM532220W/SLW/TW/SLTW
HYM532220WG/SLWG
250t6
4b75Dflû
1CD07-10-DEC94
HYM532220SLTW
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VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
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256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
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HYM532814
Abstract: HY531000AJ HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC
Text: QUICK REFERENCE SIMM MODULE 5V SIMM TYPE SIZE 72 Pin 4MB DESCRIPTION 1M X 32 8 IM M 1Mx36 8M B 2M 2M 16MB 4M 4M 32M B 8M 8M NO TE : 4 X X X X X X 32 36 32 36 32 36 PART NO. SPEED REF. DEVICE USED HEIGHT EDO, S L HYM532124AW/ATW 60/70/80 IK HY5118164BUC/BTC x 2
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HYM532124AW/ATW
532100AM
HYM532120W/TW
HYMS32120AW/ATW
HY5118164BUC/BTC
HY514400AJ
HY5118160JC/TC
HY5118160BJC/BTC
HY531000AJ
HYM532814
HYM532224
hy5118160bjc
HYM532214AE60
HY5118160
HYM536A814BM
HYM536100AM
HY51178048J
HY5118160JC
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HYM532814
Abstract: TRA8 L HYM536410 HYM532100AM HYM532100
Text: TIMING DIAGRAM INDEX E D O 4-Byte SIMM HYM532124AW HYM532224AW . . . . . . 1Mx32 EDO 2Mx32 EDO 2Mx32 EDO 1Mx 16 based . . . . . 1Mx 16 based . . . . . 2Mx8 based . . . . . EDO TIMING DIAGRAM -1 EDO TIMING DIAGRAM -1 . .
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HYM532124AW
HYM532224AW
HYM532224AE
HYM532214AE
HYM532414AM
HYM532414BM
1Mx32
2Mx32
HYM532814
TRA8 L
HYM536410
HYM532100AM
HYM532100
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HYM536100AM
Abstract: HYM532814 4Mx4 dram simm HYM532100AM 1MX32 HYM532120W HYM532224 HYM536410 HYM536410AM HYM532200AM
Text: TABLE OF CONTENTS 1. INDEX 1 Table of C ontents. 2. PRODUCT QUICK GUIDE Ordering In fo rm atio n . Quick Reference . How and What to know as reading Part No.
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HYM532124AW
HYM532224AW
HYM532224AE
HYM532214AE
HYM532414AM
HYM532414BM
HYM536A414AM
HYM536A414BM
HYM532814AM
HYM532814BM
HYM536100AM
HYM532814
4Mx4 dram simm
HYM532100AM
1MX32
HYM532120W
HYM532224
HYM536410
HYM536410AM
HYM532200AM
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st z7m
Abstract: SO DIMM 72-pin C5401 PI-33
Text: TIMING DIAGRAM INDEX DRAM MODULE 3.3V DIMM TYPE SIZE 8-Byta 8MB DESCRIPTION 1M X 64 EDO, SL DIMM 168 Pin FPM, SL 1M X 72 FPM, SL FPM, SL, ECC 16MB 2M X 64 EDO, SL FPM, SL 2M 32MB X 72 FPM, SL, ECC 4M X 64 EDO, SL FPM, SL 4M X 72 EDO, SL, ECC FPM, SL, ECC
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HYM5V64104AX/ATX
HYM5V64124AX/ATX
HYMSV64100AN/ATN
HYMSV641OOAX/ATX
1WCHQ11
1CWU351,
st z7m
SO DIMM 72-pin
C5401
PI-33
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HY5118160JC
Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM
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HYM581000BM
HYM591000BM
SPEEp50/60/70
HY514400AJ
HY514400AJX2
HY531000AJX1
HYM584000AM
HYM584000DM
HYM594000AM
HYM594000DM
HY5118160JC
HY531000AJ
HY-53
HYM591000B
HYM536100AM
HYM532120W
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