WS1M32V-XG3X
Abstract: No abstract text available
Text: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins
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WS1M32V-XG3X
1Mx32
512Kx32,
2Mx16
WS1M32V-XG3X
I/O31
I/O30
I/O29
I/O28
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Untitled
Abstract: No abstract text available
Text: WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8
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WS1M32V-XG3X
1Mx32
512Kx32,
2Mx16
WS1M32V-XG3X
I/O0-31
A0-18
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SAMSUNG MCP
Abstract: samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5
Text: Preliminary MCP MEMORY K5A3x40YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary
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K5A3x40YT
4Mx8/2Mx16)
512Kx8/256Kx16)
512tRDR
69-Ball
08MAX
SAMSUNG MCP
samsung K5 MCP
BA35
BA4110
ba4410
BA651
Flash Memory SAMSUNG k5
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PDF
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WS1M32V-XG3X
Abstract: No abstract text available
Text: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins
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WS1M32V-XG3X
1Mx32
512Kx32,
2Mx16
WS1M32V-XG3X
I/O31
I/O30
I/O29
I/O28
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PDF
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WEDF1M32B-XXX5
Abstract: WEDF1M32B-XG2TX5 WEDF1M32B-XHX5 1m 0880
Text: White Electronic Designs WEDF1M32B-XXX5 ADVANCED* 1Mx32 5V Flash Module FEATURES Access Times of 70, 90, 120ns Packaging: Organized as 1Mx32, user configurable as 2Mx16 or 4Mx8. • 66 pin, PGA Type, 1.185” square, Hermetic Ceramic HIP Package 401 Commercial, Industrial and Military Temperature
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WEDF1M32B-XXX5
1Mx32
120ns
1Mx32,
2Mx16
16KByte
WEDF1M32B-XG2TX5
WEDF1M32B-XHX5
32KByte
WEDF1M32B-XXX5
1m 0880
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mask rom
Abstract: No abstract text available
Text: KM23V32005D E TY/KM23S32005D(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time/Page Access Time 3.3V/3.0V Operation : 100/30ns(Max.)
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KM23V32005D
TY/KM23S32005D
32M-Bit
/2Mx16)
304x8
152x16
100/30ns
150/50ns
KM23S32005D
mask rom
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PDF
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Untitled
Abstract: No abstract text available
Text: KM23V32000D E TY/KM23S32000D(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.)
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KM23V32000D
TY/KM23S32000D
32M-Bit
/2Mx16)
304x8
152x16
100ns
150ns
KM23S32000D
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Untitled
Abstract: No abstract text available
Text: KM23C32000C E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption
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KM23C32000C
32M-Bit
/2Mx16)
304x8
152x16
100ns
44-TSOP2-400
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Untitled
Abstract: No abstract text available
Text: K3N6V U 1000D-YC(E)/K3N6S1000D-YC(E) CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.)
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1000D-YC
/K3N6S1000D-YC
32M-Bit
/2Mx16)
304x8
152x16
100ns
150ns
K3N6S1000D-YC
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Untitled
Abstract: No abstract text available
Text: K7R323682M K7R321882M K7R320982M K7R320882M 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDR TM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001 Advance 0.1
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K7R323682M
K7R321882M
K7R320982M
K7R320882M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit,
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Untitled
Abstract: No abstract text available
Text: K3P6V1000B-GC CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time : 100ns(Max.) Page Access Time : 30ns(Max.) • 8 words / 16 bytes page access
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K3P6V1000B-GC
32M-Bit
/2Mx16)
304x8
152x16
100ns
44-SOP-600
K3P6V1000B-GC
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K7R323682M-FC20
Abstract: K7R320982M-FC20
Text: K7R323682M K7R321882M K7R320982M K7R320882M Preliminary 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDR TM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001
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K7R323682M
K7R321882M
K7R320982M
K7R320882M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit,
K7R323682M-FC20
K7R320982M-FC20
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Untitled
Abstract: No abstract text available
Text: KM23C32005BT CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 8 words/ 16 bytes page access
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KM23C32005BT
32M-Bit
/2Mx16)
304x8
152x16
100ns
150mA
44-TSOP2-400
KM23C32005BT
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Untitled
Abstract: No abstract text available
Text: K7J323682M K7J321882M K7J320882M Preliminary 1Mx36 & 2Mx18 & 4Mx8 DDR II SIO b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. July, 15 200 1 Advance 0.1 1. 2. 3. 4.
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K7J323682M
K7J321882M
K7J320882M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit,
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Untitled
Abstract: No abstract text available
Text: Preliminary KM23V32000C E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time 3.3V Operation : 120ns(Max.) 3.0V Operation : 150ns(Max.)
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OCR Scan
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KM23V32000C
32M-Bit
/2Mx16)
304x8
152x16
120ns
150ns
30/25mA
44-TSOP2-400
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PDF
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9CTI
Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
Text: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density
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OCR Scan
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ED1784MS
250ns
EDI784MSV
EDI784MSV50BB
EDI784MSV50FB
EDI784MSV50B8
EDI784MSV506C
24/32Pin
300MN
3530im
9CTI
S28B
9CTI 10 pin ic
EC017
EDJ7
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Untitled
Abstract: No abstract text available
Text: m i EDI784MSV-RP 4Megx8 Ruggedized Plastic NAND Flash ELECT R O N IC DESlÊN S. IN C 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304)x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high
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OCR Scan
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EDI784MSV-RP
250ms
minV50SI
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23C32000
Abstract: 23C32000CT 23c3200
Text: KM23C32000C E T_ CMOS MASK ROM 32M-Bit (4Mx8 2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V
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OCR Scan
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KM23C32000C
32M-Bit
2Mx16)
304x8
152x16
100ns
23C32000C
44-TSQ
P2-400
23C32000
23C32000CT
23c3200
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Untitled
Abstract: No abstract text available
Text: KM23V32005B E T CMOS MASK ROM 32M-Bit (4Mx8 2Mx16) CMOS MASK ROM FEATURES G E N E R A L D E S C R I P T IO N • Switchable organization 4,194,304 x 8(byte mode) 2,097,152 x 16(word mode) • Fast access time Random Access Tim e : 100ns(M ax.) Page Access Tim e
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OCR Scan
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KM23V32005B
32M-Bit
2Mx16)
100ns
23V32005B
44-TSQ
P2-400
304x8
152x16
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PDF
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i2101
Abstract: No abstract text available
Text: KM23C32101C CMOS MASK ROM 32M-Bit 4Mx8 CMOS MASK ROM FEATURES G E N E R A L D E S C R IP T IO N • 4,194,304 x 8 bit organization • Fast a c c e ss time : 1Q0ns(Max.) • Supply voltage : single + 5 V • Current consumption The K M 2 3 C 3 2 1 01 C is a fully static m ask programmable R O M
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OCR Scan
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KM23C32101C
32M-Bit
304x8
36-DIP.
10QpF
2101C
23CJ2101C-12
23C32101C-1S
i2101
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4Mx8 dram simm
Abstract: No abstract text available
Text: DRAM MODULE 4 Mega Byte KMM5841OOAKN Fast Page Mode 4Mx8 DRAM SIMM , 2K Refresh ,5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION The Sam sung KMM5841 OOAKN is a 4M bit x 8 I P r e lim in â r y FEATURES • Performance Range: Dynam ic RAM high density m em ory module. The
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OCR Scan
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KMM5841OOAKN
KMM5841
24-pin
44C4100AK
4Mx8 dram simm
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Untitled
Abstract: No abstract text available
Text: Preliminary KM23V32000B E TY/KM23S32000B(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES S w itch ab le organ izatio n 4 ,1 9 4 ,3 0 4 x 8(b yte m ode) 2,0 97,152 x 16(w ord m ode) Fast access tim e Random A ccess T im e
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OCR Scan
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KM23V32000B
TY/KM23S32000B
32M-Bit
/2Mx16)
100ns
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PDF
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Untitled
Abstract: No abstract text available
Text: KM23C32000C E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time ; 100ns(Max.) • Supply voltage : single +5V • Current consumption
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OCR Scan
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KM23C32000C
32M-Bit
/2Mx16)
304x8
152x16
100ns
KM23C32Q00C
44-TSOP2-400
100pF
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PDF
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Untitled
Abstract: No abstract text available
Text: KM23C32120C CMOS MASK ROM 32M-Bit (4Mx8 CM OS M ASK ROM FEATURES G E N E R A L DESC R IPT IO N • • • • The KM23C32120C is a lully static mask programmable R O M organized 4,194,304 x 8 bit. It is fabricated using slllcon-gate C M O S process technology.
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OCR Scan
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KM23C32120C
32M-Bit
100ns
42-DIP-600
KM23C32120C
100pF
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