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    511000J Search Results

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    511000J Price and Stock

    Vishay Sfernice RH2511000JS03

    SFERNICE FIXED RESISTORS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RH2511000JS03 Bag 10
    • 1 -
    • 10 $19.602
    • 100 $19.602
    • 1000 $19.602
    • 10000 $19.602
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    Vishay Intertechnologies RH2511000JS03

    Resistor, 1.1 kOhm, ? 5%, 25 W, Wirewound, Power, Solder Lug - Bag (Alt: RH2511000JS03)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RH2511000JS03 Bag 8 Weeks 10
    • 1 -
    • 10 $16.44705
    • 100 $12.87018
    • 1000 $12.87018
    • 10000 $12.87018
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    Newark RH2511000JS03 Bulk 10
    • 1 -
    • 10 $23.4
    • 100 $17.79
    • 1000 $15.96
    • 10000 $15.96
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    Toshiba America Electronic Components TC511000J-85

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics TC511000J-85 134
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    Toshiba America Electronic Components TC511000J-12

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    Bristol Electronics TC511000J-12 15
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    Toshiba America Electronic Components TC511000J85

    Fast Page DRAM, 1MX1, 85ns, CMOS, PDSO20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TC511000J85 335
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    511000J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HB56A19B

    Abstract: HB56A19B8A HB56A19B10A HB56A19B-7H 511000a HB56A19AT10A HB56A19B-8A HB56A19
    Text: HB56A19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM H M 511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types (HB56A19A, HB56A19AT), Socket type


    OCR Scan     		PDF HB56A19 576-Word 511000JP) 30-pin HB56A19A, HB56A19AT) HB56A19B) HB56A19B HB56A19B8A HB56A19B10A HB56A19B-7H 511000a HB56A19AT10A HB56A19B-8A

    HB56A18B-8A

    Abstract: SIMM 30-pin HB56A18B HB56A18AT-6H "30 pin simm" 30-pin SIMM RAM 30 pin SIMM socket HB56A18B8A zp 1401 we221
    Text: HB56A18 Series 1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN DESCRIPTION The HB56A18 Is a 1M x 8 dynamic RAM module, mounted eight 1-Mbit DRAM HM 511000JP sealed in SOJ package. An outline of the H B56A18 is 30-pin single


    OCR Scan     		PDF HB56A18 576-Word HM511000JP) 30-pin HB56A18A, HB56A18AT) HB56A18B) HB56A18B-8A SIMM 30-pin HB56A18B HB56A18AT-6H "30 pin simm" 30-pin SIMM RAM 30 pin SIMM socket HB56A18B8A zp 1401 we221

    HB56A18B

    Abstract: HB56A18B-8A 30 pin SIMM socket 511000a 30-pin simm socket
    Text: MB56A18 S eries-1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN DESCRIPTION The HB56A18 is a 1M x 8 dynamic RAM module, mounted eight 1-Mbit DRAM H M 511000JP sealed in SOJ package. An outline of the HB56A18 is 30-pin single


    OCR Scan     		PDF MB56A18 576-Word HB56A18 511000JP) 30-pin HB56A18A, HB56A18AT) HB56A10B) HB56A18B HB56A18B-8A 30 pin SIMM socket 511000a 30-pin simm socket

    Untitled

    Abstract: No abstract text available
    Text: HITACHI/ LOGIC/ARRAYS/HEH S1E J> MM1bED3 DGlRlfib 577 IHIT2 HB56D136B/S Series-1,048,576-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56D136B/SB/BR/SBR/BS/SBS is a 1M x 36 dy­ namic RAM module, mounted 8 pieces of 4 Mbit DRAM


    OCR Scan     		PDF HB56D136B/S 576-Word 36-Bit HB56D136B/SB/BR/SBR/BS/SBS HM514400JP/AJ) HM511000JP) HB56D136B/SB/BR/SBR) HM511000ATS) HB56D136SB/ HB56D136B/SB/BR/SBR/BS/SBS

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1M X 9-Bit Dynamic RAM Module HYM 91000S/L-60/-70/-80 HYM 9100SL/LL-60/-70 Advanced Information • • • • • • • • • • • • • • • 1 048 576 words by 9-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time -60 version


    OCR Scan     		PDF 91000S/L-60/-70/-80 9100SL/LL-60/-70 91000S L/91000SL

    91000S-70

    Abstract: 91000L-70 511000 MK capacitor siemens MO-068-AC 511000j siemens 91000 HYM91000L CSR1010
    Text: SIEM EN S 1M X 9-Bit Dynamic RAM Module HYM 91000S/L-60/-70/-80 HYM 91OO0SL/LL-60/-70 Advanced Information • 1 048 576 words by 9-bit organization • Fast access and cycle 60 ns access time 110 ns cycle time -60 70 ns access time 130 ns cycle time (-70


    OCR Scan     		PDF 91000S/L-60/-70/-80 91OO0SL/LL-60/-70 91000SL/LL) 91000S L-SIM-30-800, MO-Q64-AC -B890Ã OH--79 62mox GLS05061 91000S-70 91000L-70 511000 MK capacitor siemens MO-068-AC 511000j siemens 91000 HYM91000L CSR1010

    511000a

    Abstract: No abstract text available
    Text: HB56D236B/SB Series-2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B 5 6 D 2 3 6 B /S B /B S /S B S is a 2M x 36 dynamic RAM module, mounted 16 pieces of 4 Mbit DRAM H M 514400JP /A J sealed in SOJ package and 8 pieces of


    OCR Scan     		PDF HB56D236B/SB 152-Word 36-Bit 514400JP 511000JP) 11000A 72-pin 511000a

    Untitled

    Abstract: No abstract text available
    Text: bOE ]> • EMENS A235bOS 004712*} 3^3 K M S I E 6 SIEMENS AKTIENGESELLSCHAF 'T - 4 ^ '3 - 1 3 HYM 91000S/L-60/-70/-80 HYM 9100SL/LL-60/-70 1M x 9-Bit Dynamic RAM Module Advanced Information • 1 048 576 words by 9-bit organization • Fast access and cycle time


    OCR Scan     		PDF A235bOS 91000S/L-60/-70/-80 9100SL/LL-60/-70 fl23SbD5 91000S L/91000SL A53SbOS G047144

    101490

    Abstract: P22n HM50464P-12 50464 ram
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY


    OCR Scan     		PDF ADE-40 101490 P22n HM50464P-12 50464 ram

    HM511000AJP8

    Abstract: HM511000-12 HM511000P10S HM511000A HM511000AJP-10 HM511000 HM511000P-12 HM511000P HM511000S 11000AP
    Text: H M S 1 1000S Series H M S 1 1000A Series 1048576-word x 1-bit C M O S Dynamic R A M The Hitachi HM511000S/A series is a CMOS dynamic RAM organized 1048576-word x 1-bit. HM511000S/A has realized higher density, higher performance and various functions by employing 1.3 ^tm CMOS process technology and some new


    OCR Scan     		PDF 1000S 1048576-word HM511000S/A 18-pin 20-pin HM511000AJP8 HM511000-12 HM511000P10S HM511000A HM511000AJP-10 HM511000 HM511000P-12 HM511000P HM511000S 11000AP

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS 1M X 9-Bit Dynamic RAM Module HYM 91000S/L-60/-70/-80 HYM 91000SL/LL-60/-70 Advanced Information • 1 048 576 words by 9-bit organization • Fast access and cycle 60 ns access time 110 ns cycle time -60 70 ns access time 130 ns cycle time (-70


    OCR Scan     		PDF 91000S/L-60/-70/-80 91000SL/LL-60/-70 91000SL/LLS L/91000SL 91000S L-SIM-30-800, MO-064-AC

    siemens 91000

    Abstract: 51000J aa-es siemens
    Text: SIEMENS 1M X 9-Bit Dynamic RAM Module HYM 91000S/L-60/-70/-80 HYM 9100SL/LL-60/-70 Advanced Inform ation • • 1 048 576 words by 9-bit organization Fast access and cycle time 60 ns access tim e 110 ns cycle tim e -60 version 70 ns access time 130 ns cycle tim e (-70 version)


    OCR Scan     		PDF 91000S/L-60/-70/-80 9100SL/LL-60/-70 91000SL/LL) 91000S L/91000SL siemens 91000 51000J aa-es siemens

    HM6788P-25

    Abstract: 6788P s12045 28-pin SOJ SRAM
    Text: • RELIABILITY OF HITACHI 1C MEMORIES 1. STRUCTURE IC memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic o f bipolar memo­ ries is high speed but small capacity, instead, MOS


    OCR Scan     		PDF