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    BPW16N Search Results

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    BPW16N Price and Stock

    Vishay Semiconductors BPW16N

    PHOTOTRANSISTOR 450 TO 1040 NM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BPW16N Bulk 7,201 1
    • 1 $0.98
    • 10 $0.6
    • 100 $0.98
    • 1000 $0.30488
    • 10000 $0.25332
    		Buy Now

    Vishay Intertechnologies BPW16N

    PHOTO TRANS. 1.8MM 40DEG-e4 - Bulk (Alt: BPW16N)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BPW16N Bulk 6 Weeks 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.24513
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    Mouser Electronics BPW16N 11,442
    • 1 $0.83
    • 10 $0.542
    • 100 $0.356
    • 1000 $0.281
    • 10000 $0.242
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    Newark BPW16N Bulk 4,191 1
    • 1 $0.83
    • 10 $0.542
    • 100 $0.355
    • 1000 $0.338
    • 10000 $0.338
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    Future Electronics BPW16N 6 Weeks 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.244
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    Bristol Electronics BPW16N 2,980
    • 1 -
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    • 1000 -
    • 10000 -
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    Quest Components BPW16N 2,384
    • 1 $1.15
    • 10 $1.15
    • 100 $1.15
    • 1000 $0.46
    • 10000 $0.4025
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    TTI BPW16N Bulk 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.241
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    EBV Elektronik BPW16N 7 Weeks 5,000
    • 1 -
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    Telefunken Semiconductor GmbH & Co Kg BPW16N

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics BPW16N 2,240
    • 1 -
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    • 10000 -
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    Quest Components BPW16N 1,792
    • 1 $0.55
    • 10 $0.55
    • 100 $0.55
    • 1000 $0.22
    • 10000 $0.22
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    Not Specified BPW16N

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics BPW16N 1,000
    • 1 -
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    Others BPW16N

    PHOTO TRANSISTOR DETECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BPW16N 800
    • 1 $0.77
    • 10 $0.77
    • 100 $0.77
    • 1000 $0.308
    • 10000 $0.308
    		Buy Now
    Find more BPW16N price and stock on Findchips.com

    BPW16N Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BPW16N Vishay Telefunken Silicon NPN Phototransistor Original PDF
    BPW16N Vishay Telefunken Phototransistor, 1nA Dark Current, 825nm Wavelength Original PDF
    BPW16N Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BPW16N Philips Components Philips Data Book Scan Scan PDF
    BPW16N Telefunken Electronic Photo Detectors / Phototransistors / Photo Pin Diodes Scan PDF

    BPW16N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic 8237

    Abstract: No abstract text available
    Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily


    Original     		PDF BPW16N BPW16N CQY36N 2002/95/EC 08-Apr-05 ic 8237

    8239

    Abstract: BPW16N CQY36N
    Text: BPW16N Vishay Telefunken Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of


    Original     		PDF BPW16N BPW16N CQY36N D-74025 20-May-99 8239 CQY36N

    Untitled

    Abstract: No abstract text available
    Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily


    Original     		PDF BPW16N BPW16N CQY36N 200any 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF BPW16N 2002/95/EC 2002/96/EC BPW16N 11-Mar-11

    CQY36

    Abstract: BPW16N BPW16
    Text: BPW16N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable


    Original     		PDF BPW16N BPW16N D-74025 15-Jul-96 CQY36 BPW16

    Untitled

    Abstract: No abstract text available
    Text: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF BPW16N 2002/95/EC 2002/96/EC BPW16N 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12

    5047 npn

    Abstract: 8239 BPW16N npn phototransistor pf494
    Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF BPW16N 2002/95/EC 2002/96/EC BPW16N 54lectual 18-Jul-08 5047 npn 8239 npn phototransistor pf494

    BPW16N

    Abstract: CQY36N
    Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily


    Original     		PDF BPW16N BPW16N CQY36N 08-Apr-05 CQY36N

    Untitled

    Abstract: No abstract text available
    Text: BPW16N Vishay Telefunken Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of


    Original     		PDF BPW16N BPW16N CQY36N D-74025 20-May-99

    BPW16N

    Abstract: CQY 24
    Text: TELEFUNKEN Semiconductors BPW 16 N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are


    Original     		PDF BPW16N D-74025 CQY 24

    Untitled

    Abstract: No abstract text available
    Text: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF BPW16N 2002/95/EC 2002/96/EC BPW16N 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    CQY36N

    Abstract: BPW16N ic 8236 8237 diode
    Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily


    Original     		PDF BPW16N BPW16N CQY36N D-74025 08-Mar-05 CQY36N ic 8236 8237 diode

    BPW16N

    Abstract: CQY36N
    Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of


    Original     		PDF BPW16N BPW16N CQY36N D-74025 20-May-99 CQY36N

    BPW16N

    Abstract: CQY36N
    Text: BPW16N Vishay Telefunken Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of


    Original     		PDF BPW16N BPW16N CQY36N D-74025 20-May-99 CQY36N

    CQY36

    Abstract: No abstract text available
    Text: BPW16N VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily


    Original     		PDF BPW16N BPW16N CQY36N D-74025 26-Mar-04 CQY36

    Untitled

    Abstract: No abstract text available
    Text: CQY36N Vishay Telefunken ¾ GaAs Infrared Emitting Diode in Miniature T– Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.


    Original     		PDF CQY36N CQY36N BPW16N D-74025 20-May-99

    BPW16N

    Abstract: CQY36N
    Text: CQY36N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.


    Original     		PDF CQY36N CQY36N BPW16N D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity:  = ± 55°


    Original     		PDF CQY36N BPW16N 2002/95/EC 2002/96/EC CQY36N 11-Mar-11

    A 69157 scr

    Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
    Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer


    Original     		PDF 90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3

    7919

    Abstract: No abstract text available
    Text: CQY36N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.


    Original     		PDF CQY36N CQY36N BPW16N D-74025 29-Mar-04 7919

    CQY36

    Abstract: BPW16N CQY36N
    Text: CQY36N Vishay Semiconductors ¾ GaAs Infrared Emitting Diode in Miniature T– Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.


    Original     		PDF CQY36N CQY36N BPW16N D-74025 20-May-99 CQY36

    Untitled

    Abstract: No abstract text available
    Text: Temic BPW16N S e m i c o n d u c t o r s Silicon NPN Phototransistor Description B P W 1 6 N is a s ilic o n N P N e p ita x ia l p la n a r p h o to tra n s is ­ to r in a m in ia tu re p la stic c a s e w ith fla t w in d o w . W ith a le a d c e n te r to c e n te r s p a c in g o f 2 .5 4 m m a n d a


    OCR Scan     		PDF BPW16N 15-Jul-96

    BPW85C

    Abstract: No abstract text available
    Text: Tem ic S e m i c o n d u c t o r s Detectors Photo Transistors .fe-'. . . Photo - Sensitive Package . •: . Cbaraaeristiès jfca^MA V E e/fflW /Ö B ^ C V C Ç -5V , TVpe X => 950 um I r —S mA., X » 950w n) Photo Transistors in Clear Plastic Package


    OCR Scan     		PDF BPW16N BPW17N BPW85A BPW85B BPW85C BPW96A BPW96B BPW96C BPV11 TEMT2100

    c1g smd

    Abstract: bpv10nf TEMD2100
    Text: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -


    OCR Scan     		PDF CQY36N CQY37N TSUS4300 TSUS4400 CQX48A CQX48B TSSS2600 TSUS5200 TSUS5201 TSUS5202 c1g smd bpv10nf TEMD2100