Untitled
Abstract: No abstract text available
Text: CQY36N Vishay Telefunken ¾ GaAs Infrared Emitting Diode in Miniature T– Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
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CQY36N
CQY36N
BPW16N
D-74025
20-May-99
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BPW16N
Abstract: CQY36N
Text: CQY36N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
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CQY36N
CQY36N
BPW16N
D-74025
20-May-99
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Untitled
Abstract: No abstract text available
Text: CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 55°
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CQY36N
BPW16N
2002/95/EC
2002/96/EC
CQY36N
11-Mar-11
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7919
Abstract: No abstract text available
Text: CQY36N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
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CQY36N
CQY36N
BPW16N
D-74025
29-Mar-04
7919
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CQY36
Abstract: BPW16N CQY36N
Text: CQY36N Vishay Semiconductors ¾ GaAs Infrared Emitting Diode in Miniature T– Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
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Original
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PDF
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CQY36N
CQY36N
BPW16N
D-74025
20-May-99
CQY36
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Untitled
Abstract: No abstract text available
Text: CQY36N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
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Original
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PDF
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CQY36N
CQY36N
BPW16N
D-74025
20-May-99
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Untitled
Abstract: No abstract text available
Text: CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 55°
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CQY36N
BPW16N
2002/95/EC
2002/96/EC
CQY36N
2002/95/EC.
2011/65/EU.
JS709A
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BPW16N
Abstract: CQY36N
Text: CQY36N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
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Original
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CQY36N
CQY36N
BPW16N
08-Apr-05
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BPW16N
Abstract: CQY36N
Text: CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : ∅ 1.8 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 55°
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CQY36N
BPW16N
2002/95/EC
2002/96/EC
CQY36N
18-Jul-08
BPW16N
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Untitled
Abstract: No abstract text available
Text: CQY36N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
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CQY36N
CQY36N
BPW16N
2002/95/EC
2002/96/EC
08-Apr-05
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LP 8029
Abstract: CQY 24 DIN 7990 diode 8638 cqy 17 BPW16N CQY36N
Text: CQY 36 N TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
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CQY36N
BPW16N
D-74025
LP 8029
CQY 24
DIN 7990
diode 8638
cqy 17
BPW16N
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BPW16N
Abstract: CQY36N sr101
Text: CQY36N GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
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CQY36N
CQY36N
BPW16N
D-74025
15-Jul-96
sr101
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BPW16N
Abstract: CQY36N
Text: CQY36N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
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Original
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PDF
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CQY36N
CQY36N
BPW16N
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
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Untitled
Abstract: No abstract text available
Text: CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 55°
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Original
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PDF
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CQY36N
BPW16N
2002/95/EC
2002/96/EC
CQY36N
2011/65/EU
2002/95/EC.
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: CQY36N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
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Original
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CQY36N
CQY36N
BPW16N
D-74025
05-May-04
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ic 8237
Abstract: No abstract text available
Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily
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BPW16N
BPW16N
CQY36N
2002/95/EC
08-Apr-05
ic 8237
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A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer
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90F8548
SDP8600-001
95F5325
SDP8371-001
28H5849
28H5850
OPB933W55Z
08F2750
OPB963T55
08F2755
A 69157 scr
65k5
HEDS 5300
HCPL-900J-000E
HCPL 0636
DT 8210 IC
hcpl788
hcpl 1360
HEDS 8210
83K3
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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8239
Abstract: BPW16N CQY36N
Text: BPW16N Vishay Telefunken Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of
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BPW16N
BPW16N
CQY36N
D-74025
20-May-99
8239
CQY36N
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c1g smd
Abstract: bpv10nf TEMD2100
Text: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -
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CQY36N
CQY37N
TSUS4300
TSUS4400
CQX48A
CQX48B
TSSS2600
TSUS5200
TSUS5201
TSUS5202
c1g smd
bpv10nf
TEMD2100
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CQX48B
Abstract: IR Emitters "IR Emitters"
Text: VISH A Y Vishay Telefunken ▼ Selector Guide IREDs Infrared Emitting Diodes Package Dim. Fig- Characteristics Jype + /- tp Standard IR Emitters GaAs 950 nm in Plastic Package T 40° 25 ! CQY36N am 10 26 L / mW/sr Ip / mA VF/ V CQY37N 12 ° 5 (>2.2) TSUS4400
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CQY36N
CQY37N
TSUS4400
CQX48B
TSSS2600
TSUS5200
TSUS5201
TSUS5202
TSUS5400
TSUS5401
IR Emitters
"IR Emitters"
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Untitled
Abstract: No abstract text available
Text: Temic CQY36N S e m i c o n d u c t o r s GaAs Infrared Emitting Diode in Miniature T -3/» Package Description C Q Y 3 6 N is a s ta n d a r d G a A s in f r a re d e m itt in g d io d e in a m i n ia t u r e to p v ie w p la s tic p a c k a g e . Its f la t w in d o w p r o v id e s a w id e a p e r t u r e m a k in g it id e a l
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CQY36N
15-Jul-96
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30016
Abstract: TSIP5201 "IR Emitter" TSIP4400
Text: Tem ic S e m i c o n d u c t o r s Infrared Emitting Diodes Characteristics Package TVpe + /-Ç tr , tf / ns U /mW/sr g Ip/m A VF / V 50 1.2 < 1.6 100 1.3(<1.7) @ Ip /b A Standard IR Emitter GaAs (950 nm) in Plastic Package -— •- - j-'•- CQY36N
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CQY36N
CQY37N
TSUS4300
TSUS4400
CQX48A
CQX48B
TSSS2600
TSUS5200
TSUS5201
TSUS5202
30016
TSIP5201
"IR Emitter"
TSIP4400
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CQX48B
Abstract: TLH04400 TLRG542
Text: V I^ ^ Y Vishay Telefunken Table of Virtual Source Sizes Part Nunber Virtual Source Size mm Part Nunber Virtual Source Size (mm) Part Nunber Virtual Source Size (mm) TLBR5410 3.6 TLHP5800 3.7 TLLY5401 3.7 TLDR4400 2.1 TLHR4200 1.5 TLMA3100 1.8 TLDR4900 2
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TLBR5410
TLDR4400
TLDR4900
TLDR5400
TLDR5800
TLHE4900
TLHE5100
TLHE5101
TLHE5102
TLHE5800
CQX48B
TLH04400
TLRG542
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