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    HY5116100B Search Results

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    HY5116100B Price and Stock

    SK Hynix Inc HY5116100BT-60

    16M X 1 FAST PAGE DRAM, 60 NS, PDSO24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY5116100BT-60 23,975
    • 1 $6
    • 10 $6
    • 100 $6
    • 1000 $2.2
    • 10000 $2.1
    		Buy Now

    HY5116100B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HYM5321600AM

    Abstract: HYM5321600ATM HYM5321600ATMG 16Mx32 HY5116100B
    Text: HYM5321600A M-Series 16Mx32 bit FP DRAM MODULE based on 16Mx1 DRAM, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM5321600A M-Series is a 16Mx32-bit Fast Page mode CMOS DRAM module consisting of thirtytwo HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1µF and


    Original     		HYM5321600A 16Mx32 16Mx1 16Mx32-bit HY5116100B HYM5321600AM/ATM HYM5321600AMG/ATMG 72-Pin 106mW HYM5321600AM HYM5321600ATM HYM5321600ATMG PDF

    ATMG

    Abstract: HYM5361600A HYM5361600AM HYM5361600AMG HYM5361600ATM HYM5361600ATMG
    Text: HYM5361600A M-Series 16Mx36 bit FP DRAM MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM5361600A M-Series is a 16Mx36-bit Fast Page mode CMOS DRAM module consisting of thirty-six HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		HYM5361600A 16Mx36 16Mx1 16Mx36-bit HY5116100B HYM5361600AM/ATM HYM5361600AMG/ATMG 72-Pin 119mW ATMG HYM5361600AM HYM5361600AMG HYM5361600ATM HYM5361600ATMG PDF

    HY5116100B

    Abstract: No abstract text available
    Text: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. HY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5116100B TheHY5116100B 1AD41-00-MAY9S 4b750Ã 0GG435b HY5116100BJ HY5116100BSLJ PDF

    Untitled

    Abstract: No abstract text available
    Text: »fl Y U ND ft I - • HYM5361600A M-Series 16Mx36 bit FP DRAM MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM 5361600A M-Series is a 16Mx36-bit Fast Page mode CMOS DRAM module consisting of thirty-six HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1 ¡iF and 0.01 (tF


    OCR Scan     		HYM5361600A 16Mx36 16Mx1 361600A 16Mx36-bit HY5116100B HYM5361600AM/ATM HYM5361600AMG/ATMG 72-Pin 256ms PDF

    HY5116100B

    Abstract: 10k52 1AD41-00-MAY95 1AD41
    Text: -HYUNDAI HY5116100B Series 16Mx 1-bit CMOS DRAM DESCRIPTION The H Y5116100B is the new generation and fast dynam ic RAM organized 16,777,216 x 1-bit. T he H Y 5116100B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5116100B Y5116100B 5116100B 1AD41-00-MAY95 HY5116100BJ HY5116100BSLJ HY5116100BT HY5116100BSLT 10k52 1AD41-00-MAY95 1AD41 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY5116100B «HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION T h is fa m ily is a 16M b it d y n a m ic R A M org a n iz e d 16 ,777 ,216 x 1-bit c o n fig u ra tio n w ith F a s t P age m o d e C M O S D R A M s. F a s t P a g e m o d e o ffe rs high


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HYM5321600A M-Series -H Y U N D A I 16MX32 bit FP DRAM MODULE based on 16Mx1 DRAM, SV, 4K-Refresh GENERAL DESCRIPTION The HYM5321600A M-Series is a 16Mx32-bit Fast Page mode CMOS DRAM module consisting of thirtytwo HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1 uF and


    OCR Scan     		HYM5321600A 16MX32 16Mx1 16Mx32-bit HY5116100B HYM5321600AM/ATM HYM5321600AMG/ATMG 72-Pin 256ms PDF

    BEDO RAM

    Abstract: hy5118160b HY512264 HY5117404 HY5118164B
    Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE


    OCR Scan     		HY531000A. HY534256A. 16-bit. HY5216257. x16-bit. DB101-20-MAY95 BEDO RAM hy5118160b HY512264 HY5117404 HY5118164B PDF

    HY5116400BT

    Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
    Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC


    OCR Scan     		256KX4) HY531000AJ HY531000ALJ HY534256AJ HY534256ALJ HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY5116400BT HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ hy51v65804 HY5117400BJ PDF

    HY514260

    Abstract: HY5117404A 164-04A 4m 300mil
    Text: I' PRODUCT AVAILABILITY DRAM PRODUCT 1Mbit 2M bit 4Mbit DESCRIPTION PACKAGE OPTION ACCESS TIME ns - As of '96.3Q OPERATI!« CURRENT (mA,MAX) STA»IDBY CURI*ENT (rtiA, MAX) TTL CMOS AVAILABILITY 1M x 1 F a s t Pa ge HY531000A SOJ 60/7 0/80 85/7 5/65 2 1


    OCR Scan     		HY531000A HY534256A 256KX8 HY512800 HY512264 HY5120 6404A HY5116404B HY51V16404A HY51V16404B HY514260 HY5117404A 164-04A 4m 300mil PDF

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260 PDF

    HY5116100B

    Abstract: 1AD41-00-MAY95 HY5116100
    Text: ' • H Y U N D A H Y 5 1 1 6 1 0 0 B S e r ie s 16Mx 1-bit CMOS DRAM I DESCRIPTION The H Y 5116100B is the new generation and fast dynam ic R A M organized 16,777,216 x 1-bit. T h e H Y 5 1 1 6 1 0 0 B utilizes H yundai’s C M O S silicon gate process technology a s well a s advanced circuit techniques to provide w ide


    OCR Scan     		HY5116100B 16Mx1 HY5116100Bis TheHY5116100B 4b750Ã 300435b 1AD41-00-MAY9S HY5116100BJ 1AD41-00-MAY95 HY5116100 PDF

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


    OCR Scan     		256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ PDF