HY5118164B
Abstract: HY5118164BJC HY5116164B
Text: HY5118164B,HY5116164B 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY5118164B
HY5116164B
1Mx16,
16-bit
1Mx16
HY5118164BJC
HY5116164B
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hy5118164b
Abstract: 72 pin HY5118164B HYM564224ATXG HYM564224AXG
Text: HYM564224A X-Series Buffered 2Mx64 bit CMOS DRAM MODULE based on 1Mx16 DRAM, EDO, 1K-Refresh GENERAL DESCRIPTION The HYM564224A X-Series is a 2Mx64-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5118164B in 42 pin SOJ and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy
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HYM564224A
2Mx64
1Mx16
2Mx64-bit
HY5118164B
16-bit
HYM564224AXG
168-Pin
72 pin HY5118164B
HYM564224ATXG
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM532124A W-Series 1M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532124A is a 1M x 32-bit EDO mode CMOS DRAM module consisting of two HY5118164B in 42/42 pin S O J or 44/50 pin TSOPII on a 72 pin glass-epoxy printed circuit board. Two 0.01 nF decoupling capacitors are
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HYM532124A
32-bit
HY5118164B
HYM532124AW/ASLW
HYM532124AWG/ASLWG
HYM532124A
HYM532124AT
A0005
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Untitled
Abstract: No abstract text available
Text: ^HYUNDAI HYM564224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 ¡aF and
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HYM564224A
64-bit
HY5118164B
HYM564224ARG/ATRG/ASLRG/ASLTRG
22SI5
Mb750flfl
1CE16-10-APR96
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HYM564124
Abstract: HY5118164 c044 HYM5641
Text: H • { H Y U N D A I Y M 5 6 4 1 2 X 4 - S e r i e s 1M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION TTie HYM564124 is a 1M x 64-blt EDO mode CMOS DRAM module consisting of four HY5118164B in 42/42pin SOJ, two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22|iF decoupling
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64-bit
HYM564124
64-blt
HY5118164B
42/42pin
16-bit
HYM564124XG/SLXG
DQ0-DQ63)
1EC05-10-APR95
HY5118164
c044
HYM5641
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HY5118164
Abstract: F1024
Text: • H Y UN DA I HYM572A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A224A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin
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HYM572A224A
72-bit
HY514404B
HY5118164B
2048bit
HYM572A224ARG/ASLRG/ATRG/ASLTRG
DQ0-DQ71)
1EC06-10-APR95
HY5118164
F1024
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HYM532814
Abstract: HY531000AJ HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC
Text: QUICK REFERENCE SIMM MODULE 5V SIMM TYPE SIZE 72 Pin 4MB DESCRIPTION 1M X 32 8 IM M 1Mx36 8M B 2M 2M 16MB 4M 4M 32M B 8M 8M NO TE : 4 X X X X X X 32 36 32 36 32 36 PART NO. SPEED REF. DEVICE USED HEIGHT EDO, S L HYM532124AW/ATW 60/70/80 IK HY5118164BUC/BTC x 2
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HYM532124AW/ATW
532100AM
HYM532120W/TW
HYMS32120AW/ATW
HY5118164BUC/BTC
HY514400AJ
HY5118160JC/TC
HY5118160BJC/BTC
HY531000AJ
HYM532814
HYM532224
hy5118160bjc
HYM532214AE60
HY5118160
HYM536A814BM
HYM536100AM
HY51178048J
HY5118160JC
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A8303
Abstract: HY5118164BSLJC HY5118164B 5118164B marking da
Text: •HYUNDAI HY5118164B>HY51161646 1M x 16bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode offers high speed random access of memory cells
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HY5118164B
HY51161646
HY5118164BJC
HY5118164BSLJC
HY5118164BTC
HY5118164BSLTC
HY5116164BJC
HY5116164BSLJC
HY5116164BTC
HY5116164BSLTC
A8303
5118164B
marking da
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D01400
Abstract: 281 C 38 100 D
Text: •HYUNDAI HYM564224 X-Series 2M X 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM564224 is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5118164B in 42/42pin SOJ, two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22nF decoupling
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HYM564224
64-bit
HY5118164B
42/42pin
16-bit
HYM564224XG/SLXG
DQ0-DQ63)
ECO5-10-APR95
D01400
281 C 38 100 D
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HYM532224A
Abstract: AS-002 AO HY5118164
Text: -HYUNDAI HYM532224A W-Series 2M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM 532224Ais a 2M x 32-bit EDO m ode CMOS DRAM m odule consisting of four HY5118164B in 42/42 pin SOJ or 44.50 pin TSOPII on a 72 pin glass-epoxy printed circuit board. Two 0.01 pF decoupling capacitors are
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HYM532224A
32-bit
532224Ais
HY5118164B
HYM532224AW/ASLW
HYM532224AWG
HYM532224A
1DC02-10-FEB96
AS-002 AO
HY5118164
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Untitled
Abstract: No abstract text available
Text: »HYUNDAI HYM572A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A224A is a 2M x 72-bit EDO mode CMOS DRAM module consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOR-II and one 2048bit EEPROM on a 168 pin
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HYM572A224A
72-bit
HY514404B
HY5118164B
2048bit
HYM572A224ARG/ASLRG/ATRG/ASLTRG
01CKQ2SXMX.
012SQ18)
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Untitled
Abstract: No abstract text available
Text: "HYUNDAI HYM532224A W-Series 2M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532224A is a 2M x 32-bit EDO mode CM O S DRAM module consisting of four HY5118164Bin 42/42 pin SOJ or 44/50 pin TSOPII on a 72 pin glass-epoxy printed circuit board. Two 0.01 nF decoupling capacitors are
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HYM532224A
32-bit
HY5118164Bin
HYM532224AW/ASLW
HYM532224AWG/ASLWG
HYM532224A
D0D54DQ
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hy5118164b
Abstract: No abstract text available
Text: “H Y U N D A I HY5118164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HV5118164B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5118164B
16-bit
16-bit.
HV5118164B
12Cjj^
Q004fiBS
1AD58-10-MAY95
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socket, 72 pin, simm
Abstract: HY5118164 HYM532224 HYM53
Text: •‘HYUNDAI • HYM532224A W-Series 2Mx32 bit EDO DRAM MODULE based on 1Mx16 DRAM, 5V, 1K-Rofresh GENERAL DESCRIPTION The HYM532224A W-Series is a 2Mx32-bit Extended Data Out mode CMOS DRAM module consisting of four HY5118164B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 (xF
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HYM532224A
1Mx16
2Mx32
2Mx32-bit
HY5118164B
HYM532224AW
HYM532224AWG
72-Pin
256ms
socket, 72 pin, simm
HY5118164
HYM532224
HYM53
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TIME03
Abstract: No abstract text available
Text: -H YU M Dfll -• HY5118164B,HY5116164B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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PDF
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HY5118164B
HY5116164B
1Mx16,
16-bit
DG0-DQ15)
TIME03
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HYM532224AW60
Abstract: HYM532224A 72 pin HY5118164B HY5118164B 1DC02-10-FEB HYM532224
Text: “H Y U N D A I HYM532224A W-Series 2M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532224A is a 2M x 32-bit EDO mode CMOS DRAM module consisting of four HY5118164B in 42/42 pin SOJ or 44/50 pin TSOPII on a 72 pin glass-epoxy printed circuit board. Two 0.01 mF decoupling capacitors are
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HYM532224A
32-bit
HY5118164B
HYM532224AW/ASLW
HYM532224AWG/ASLWG
041-f/-q
4b750flfl
1DC02-10-FEB95
HYM532224AW60
72 pin HY5118164B
1DC02-10-FEB
HYM532224
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HY5118164
Abstract: No abstract text available
Text: ••HYUNDAI HYM564224A R-Senes Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564224A is a 2M x 64-bit EDO m ode CMOS DRAM m odule consisting of eight HY5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and
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HYM564224A
64-bit
HY5118164B
HYM564224ARG/ATRG/ASLRG
DQ0-DQ63)
1CE16-10-APR95
HY5118164
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HY5118164
Abstract: No abstract text available
Text: "HYUNDAI HYM564124A R-Series Unbuffered 1M x 64-bit CMOS ORAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM564124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of tour HY5118164B in 42'42 pm SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. O.inF and
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HYM564124A
64-bit
HY5118164B
HYM564124ARGATRGASLRGASLTRG
DQ0-DQ63)
1CE16-10-APR95
1CE16-10-APR96
HY5118164
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HY5118164B
Abstract: HY5118164BJC60 HY5118164BJC V074 HY5118164BSLRC JD 16 CFt 450 HT
Text: • • H Y U N D A I H Y 5 1 1 8 1 6 4 B S e r ie s 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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16-bit
HY5118164B
16-bit.
Q1480C3
0JJ00
1AD58-10-MA
HY5118164BJC
HY5118164BJC60
V074
HY5118164BSLRC
JD 16
CFt 450 HT
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Untitled
Abstract: No abstract text available
Text: 'HYUNDAI HYM572A124A R-Series Unbuffered 1M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A124A is a 1M x 72-bit EDO mode CMOS DRAM module consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin
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HYM572A124A
72-bit
HY514404B
HY5118164B
2048bit
HYM572A124ARG/ASLRG/ATRG/ASLTRG
10CH2
4b75Dflfl
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HYM532224
Abstract: No abstract text available
Text: '«HYUNDAI HYM532224 X-Series 2M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532224 is a 2M x 32-bit EDO m ode CMOS DRAM m odule consisting of four HY5118164B in 44/50 pin TSOPli on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22 iF decoupling ca p a citor is m ounted
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HYM532224
32-bit
HY5118164B
HYM532224TXG/SLTXG
A0-A10)
DQ0-DQ31)
1CE13-10-DEC94
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5v RAS 0610
Abstract: No abstract text available
Text: • HY UN DA I HYM572A124A R-Series Unbuffered 1M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A124A is a 1M x 72-bit EDO mode CMOS DRAM module consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin
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HYM572A124A
72-bit
HY514404B
HY5118164B
2048bit
HYM572A124ARG/ASLRG/ATRG/ASLTRG
A0-A10)
DQ0-DQ71)
5v RAS 0610
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HYM532124
Abstract: HY5118164B 1DC02-10-FEB
Text: •HYUNDAI HYM532124 X-Series 1M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION TTie HYM532124 is a 1M x 32-bit EDO mode CMOS DRAM module consisting of two HY5118164B in 44/50 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22jiF decoupling capacitor is mounted
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HYM532124
32-bit
HY5118164B
22jiF
HYM532124TXG/SLTXG
A0-A10)
DQ0-DQ31)
1CE13-10-DEC94
1DC02-10-FEB
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HY5118164BJC
Abstract: HYM5V72A404 HY514404BJ HY5117404A
Text: QUICK REFERENCE DIMM MODULE 5V Unbuffered DIMM TYPE SIZE 168 Pin 8MB Unbuffered DIMM 16MB 32MB DESCRIPTION 1M X 64 EDO, SL PART NO. HYM564124AR/ATR SPEED REF. 60/70/80 DEVICE USED HEIGHT 1K HY5118164BJC/BTC x 4 S, 1" D, 1" S, 1" IM X 72 EDO, SL HYM572A124AR/ATR
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HYM564124AR/ATR
HYM572A124AR/ATR
HYM564224AR/ATR
HYM564214AF/ATF
HY5118164BJC/BTC
HY514404BJ/BT
HY5117804BJ/BT
HY5118164BJC
HYM5V72A404
HY514404BJ
HY5117404A
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