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    SK Hynix Inc HY5118164BTC-60

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    Bristol Electronics HY5118164BTC-60 8
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    SK Hynix Inc HY5118164B-JC-60

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    Quest Components HY5118164B-JC-60 7
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    HY5118164B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY5118164B

    Abstract: HY5118164BJC HY5116164B
    Text: HY5118164B,HY5116164B 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original
    PDF HY5118164B HY5116164B 1Mx16, 16-bit 1Mx16 HY5118164BJC HY5116164B

    hy5118164b

    Abstract: 72 pin HY5118164B HYM564224ATXG HYM564224AXG
    Text: HYM564224A X-Series Buffered 2Mx64 bit CMOS DRAM MODULE based on 1Mx16 DRAM, EDO, 1K-Refresh GENERAL DESCRIPTION The HYM564224A X-Series is a 2Mx64-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5118164B in 42 pin SOJ and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy


    Original
    PDF HYM564224A 2Mx64 1Mx16 2Mx64-bit HY5118164B 16-bit HYM564224AXG 168-Pin 72 pin HY5118164B HYM564224ATXG

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM532124A W-Series 1M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532124A is a 1M x 32-bit EDO mode CMOS DRAM module consisting of two HY5118164B in 42/42 pin S O J or 44/50 pin TSOPII on a 72 pin glass-epoxy printed circuit board. Two 0.01 nF decoupling capacitors are


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    PDF HYM532124A 32-bit HY5118164B HYM532124AW/ASLW HYM532124AWG/ASLWG HYM532124A HYM532124AT A0005

    Untitled

    Abstract: No abstract text available
    Text: ^HYUNDAI HYM564224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 ¡aF and


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    PDF HYM564224A 64-bit HY5118164B HYM564224ARG/ATRG/ASLRG/ASLTRG 22SI5 Mb750flfl 1CE16-10-APR96

    HYM564124

    Abstract: HY5118164 c044 HYM5641
    Text: H • { H Y U N D A I Y M 5 6 4 1 2 X 4 - S e r i e s 1M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION TTie HYM564124 is a 1M x 64-blt EDO mode CMOS DRAM module consisting of four HY5118164B in 42/42pin SOJ, two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22|iF decoupling


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    PDF 64-bit HYM564124 64-blt HY5118164B 42/42pin 16-bit HYM564124XG/SLXG DQ0-DQ63) 1EC05-10-APR95 HY5118164 c044 HYM5641

    HY5118164

    Abstract: F1024
    Text: • H Y UN DA I HYM572A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A224A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin


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    PDF HYM572A224A 72-bit HY514404B HY5118164B 2048bit HYM572A224ARG/ASLRG/ATRG/ASLTRG DQ0-DQ71) 1EC06-10-APR95 HY5118164 F1024

    HYM532814

    Abstract: HY531000AJ HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC
    Text: QUICK REFERENCE SIMM MODULE 5V SIMM TYPE SIZE 72 Pin 4MB DESCRIPTION 1M X 32 8 IM M 1Mx36 8M B 2M 2M 16MB 4M 4M 32M B 8M 8M NO TE : 4 X X X X X X 32 36 32 36 32 36 PART NO. SPEED REF. DEVICE USED HEIGHT EDO, S L HYM532124AW/ATW 60/70/80 IK HY5118164BUC/BTC x 2


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    PDF HYM532124AW/ATW 532100AM HYM532120W/TW HYMS32120AW/ATW HY5118164BUC/BTC HY514400AJ HY5118160JC/TC HY5118160BJC/BTC HY531000AJ HYM532814 HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC

    A8303

    Abstract: HY5118164BSLJC HY5118164B 5118164B marking da
    Text: •HYUNDAI HY5118164B>HY51161646 1M x 16bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode offers high speed random access of memory cells


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    PDF HY5118164B HY51161646 HY5118164BJC HY5118164BSLJC HY5118164BTC HY5118164BSLTC HY5116164BJC HY5116164BSLJC HY5116164BTC HY5116164BSLTC A8303 5118164B marking da

    D01400

    Abstract: 281 C 38 100 D
    Text: •HYUNDAI HYM564224 X-Series 2M X 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM564224 is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5118164B in 42/42pin SOJ, two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22nF decoupling


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    PDF HYM564224 64-bit HY5118164B 42/42pin 16-bit HYM564224XG/SLXG DQ0-DQ63) ECO5-10-APR95 D01400 281 C 38 100 D

    HYM532224A

    Abstract: AS-002 AO HY5118164
    Text: -HYUNDAI HYM532224A W-Series 2M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM 532224Ais a 2M x 32-bit EDO m ode CMOS DRAM m odule consisting of four HY5118164B in 42/42 pin SOJ or 44.50 pin TSOPII on a 72 pin glass-epoxy printed circuit board. Two 0.01 pF decoupling capacitors are


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    PDF HYM532224A 32-bit 532224Ais HY5118164B HYM532224AW/ASLW HYM532224AWG HYM532224A 1DC02-10-FEB96 AS-002 AO HY5118164

    Untitled

    Abstract: No abstract text available
    Text: »HYUNDAI HYM572A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A224A is a 2M x 72-bit EDO mode CMOS DRAM module consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOR-II and one 2048bit EEPROM on a 168 pin


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    PDF HYM572A224A 72-bit HY514404B HY5118164B 2048bit HYM572A224ARG/ASLRG/ATRG/ASLTRG 01CKQ2SXMX. 012SQ18)

    Untitled

    Abstract: No abstract text available
    Text: "HYUNDAI HYM532224A W-Series 2M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532224A is a 2M x 32-bit EDO mode CM O S DRAM module consisting of four HY5118164Bin 42/42 pin SOJ or 44/50 pin TSOPII on a 72 pin glass-epoxy printed circuit board. Two 0.01 nF decoupling capacitors are


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    PDF HYM532224A 32-bit HY5118164Bin HYM532224AW/ASLW HYM532224AWG/ASLWG HYM532224A D0D54DQ

    hy5118164b

    Abstract: No abstract text available
    Text: “H Y U N D A I HY5118164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HV5118164B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY5118164B 16-bit 16-bit. HV5118164B 12Cjj^ Q004fiBS 1AD58-10-MAY95

    socket, 72 pin, simm

    Abstract: HY5118164 HYM532224 HYM53
    Text: •‘HYUNDAI • HYM532224A W-Series 2Mx32 bit EDO DRAM MODULE based on 1Mx16 DRAM, 5V, 1K-Rofresh GENERAL DESCRIPTION The HYM532224A W-Series is a 2Mx32-bit Extended Data Out mode CMOS DRAM module consisting of four HY5118164B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 (xF


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    PDF HYM532224A 1Mx16 2Mx32 2Mx32-bit HY5118164B HYM532224AW HYM532224AWG 72-Pin 256ms socket, 72 pin, simm HY5118164 HYM532224 HYM53

    TIME03

    Abstract: No abstract text available
    Text: -H YU M Dfll -• HY5118164B,HY5116164B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


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    PDF HY5118164B HY5116164B 1Mx16, 16-bit DG0-DQ15) TIME03

    HYM532224AW60

    Abstract: HYM532224A 72 pin HY5118164B HY5118164B 1DC02-10-FEB HYM532224
    Text: “H Y U N D A I HYM532224A W-Series 2M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532224A is a 2M x 32-bit EDO mode CMOS DRAM module consisting of four HY5118164B in 42/42 pin SOJ or 44/50 pin TSOPII on a 72 pin glass-epoxy printed circuit board. Two 0.01 mF decoupling capacitors are


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    PDF HYM532224A 32-bit HY5118164B HYM532224AW/ASLW HYM532224AWG/ASLWG 041-f/-q 4b750flfl 1DC02-10-FEB95 HYM532224AW60 72 pin HY5118164B 1DC02-10-FEB HYM532224

    HY5118164

    Abstract: No abstract text available
    Text: ••HYUNDAI HYM564224A R-Senes Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564224A is a 2M x 64-bit EDO m ode CMOS DRAM m odule consisting of eight HY5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and


    OCR Scan
    PDF HYM564224A 64-bit HY5118164B HYM564224ARG/ATRG/ASLRG DQ0-DQ63) 1CE16-10-APR95 HY5118164

    HY5118164

    Abstract: No abstract text available
    Text: "HYUNDAI HYM564124A R-Series Unbuffered 1M x 64-bit CMOS ORAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM564124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of tour HY5118164B in 42'42 pm SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. O.inF and


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    PDF HYM564124A 64-bit HY5118164B HYM564124ARGATRGASLRGASLTRG DQ0-DQ63) 1CE16-10-APR95 1CE16-10-APR96 HY5118164

    HY5118164B

    Abstract: HY5118164BJC60 HY5118164BJC V074 HY5118164BSLRC JD 16 CFt 450 HT
    Text: • • H Y U N D A I H Y 5 1 1 8 1 6 4 B S e r ie s 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan
    PDF 16-bit HY5118164B 16-bit. Q1480C3 0JJ00 1AD58-10-MA HY5118164BJC HY5118164BJC60 V074 HY5118164BSLRC JD 16 CFt 450 HT

    Untitled

    Abstract: No abstract text available
    Text: 'HYUNDAI HYM572A124A R-Series Unbuffered 1M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A124A is a 1M x 72-bit EDO mode CMOS DRAM module consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin


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    PDF HYM572A124A 72-bit HY514404B HY5118164B 2048bit HYM572A124ARG/ASLRG/ATRG/ASLTRG 10CH2 4b75Dflfl

    HYM532224

    Abstract: No abstract text available
    Text: '«HYUNDAI HYM532224 X-Series 2M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532224 is a 2M x 32-bit EDO m ode CMOS DRAM m odule consisting of four HY5118164B in 44/50 pin TSOPli on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22 iF decoupling ca p a citor is m ounted


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    PDF HYM532224 32-bit HY5118164B HYM532224TXG/SLTXG A0-A10) DQ0-DQ31) 1CE13-10-DEC94

    5v RAS 0610

    Abstract: No abstract text available
    Text: • HY UN DA I HYM572A124A R-Series Unbuffered 1M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A124A is a 1M x 72-bit EDO mode CMOS DRAM module consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin


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    PDF HYM572A124A 72-bit HY514404B HY5118164B 2048bit HYM572A124ARG/ASLRG/ATRG/ASLTRG A0-A10) DQ0-DQ71) 5v RAS 0610

    HYM532124

    Abstract: HY5118164B 1DC02-10-FEB
    Text: •HYUNDAI HYM532124 X-Series 1M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION TTie HYM532124 is a 1M x 32-bit EDO mode CMOS DRAM module consisting of two HY5118164B in 44/50 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22jiF decoupling capacitor is mounted


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    PDF HYM532124 32-bit HY5118164B 22jiF HYM532124TXG/SLTXG A0-A10) DQ0-DQ31) 1CE13-10-DEC94 1DC02-10-FEB

    HY5118164BJC

    Abstract: HYM5V72A404 HY514404BJ HY5117404A
    Text: QUICK REFERENCE DIMM MODULE 5V Unbuffered DIMM TYPE SIZE 168 Pin 8MB Unbuffered DIMM 16MB 32MB DESCRIPTION 1M X 64 EDO, SL PART NO. HYM564124AR/ATR SPEED REF. 60/70/80 DEVICE USED HEIGHT 1K HY5118164BJC/BTC x 4 S, 1" D, 1" S, 1" IM X 72 EDO, SL HYM572A124AR/ATR


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    PDF HYM564124AR/ATR HYM572A124AR/ATR HYM564224AR/ATR HYM564214AF/ATF HY5118164BJC/BTC HY514404BJ/BT HY5117804BJ/BT HY5118164BJC HYM5V72A404 HY514404BJ HY5117404A