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    IRFD221 Search Results

    IRFD221 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD221 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFD221 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD221 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFD221 Motorola European Master Selection Guide 1986 Scan PDF
    IRFD221 Motorola 1 Watt TMOS FETs Scan PDF
    IRFD221 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFD221 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD221 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD221 Unknown FET Data Book Scan PDF
    IRFD221(R) Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD221R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD221R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFD221R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFD221 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFD220

    Abstract: No abstract text available
    Text: IRFD220, IRFD221, IRFD222, IRFD223 S E M I C O N D U C T O R 0.7A and 0.8A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.7A and 0.8A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRFD220, IRFD221, IRFD222, IRFD223 TA09600. IRFD220 PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    IRFD220

    Abstract: Transistors c-3229 C 3229 IRFD221 D220 IRFD222 IRFD223
    Text: - Standard Power MOSFETs File Number IRFD220, IRFD221, IRFD222, IRFD223 23117 Power MOS Field-Effect Transistors N -C H A N N EL ENHAN C EM EN T MODE


    OCR Scan     		IRFD220, IRFD221, IRFD222, IRFD223 92CS-3374I IIRFD221, IRFD223 IRFD220 Transistors c-3229 C 3229 IRFD221 D220 IRFD222 PDF

    Untitled

    Abstract: No abstract text available
    Text: h a r ^ IRFD220, IRFD221, IRFD222, IRFD223 s s e m i c o n d u c t o r 0.7A and 0.8A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.7A and 0.8A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		IRFD220, IRFD221, IRFD222, IRFD223 PDF

    fd220

    Abstract: IRFD221
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IR FD 220 IRFD221 IRFD222 IR FD 223 Advance Inform ation S m all-S ig nal T M O S Field E ffe c t Transistors N-Channel Enhancem ent-M ode Silicon G ate TM O S 4-Pin DIP 1 WATT TM O S FETs rDS on = 0 8 0 H M 200 VOLTS


    OCR Scan     		IRFF112, IRFF113 IRFF110 fd220 IRFD221 PDF

    mosfet k 2038

    Abstract: IRFD222R 250M IRFD220R IRFD221R IRFD223R
    Text: Rugged Power M O S F E T s_ File Num ber 2038 IRFD220R, IRFD221R, IRFD222R, IRFD223R Avalanche Energy Rated N-Channel Power MOSFETs 0.8A a n d 0.7A, 1 5 0 V -2 0 0 V ros on = 0.8fi a n d 1 .2 0 N -C H A N N E L E N H A N C E M E N T M O D E


    OCR Scan     		IRFD220R, IRFD221R, IRFD222R, IRFD223R 50V-200V IRFD222R IRFD223R mosfet k 2038 250M IRFD220R IRFD221R PDF

    IRFD220

    Abstract: 1RFD220 IRF022 IRFD221 IRFD222 IRFD223 F14E diode. f-14e
    Text: MOTOROLA SC X S T R S /R F IM E D I b3b?aS4 G G Ö ci ? 2 3 fl | MOTOROLA • I S E M IC O N D U C T O R TECHNICAL DATA IR F D 2 2 0 IRFD221 IR F D 2 2 2 IR F D 2 2 3 Advance Information S m a ll-S ig n a l T M O S Field E ffe c t T ra n sisto rs N -Ch ann el Enh an cem en t-M ode


    OCR Scan     		IRFD220 IRFD221 IRFD222 IRFD223 PERY145M, 1RFD220 IRF022 IRFD223 F14E diode. f-14e PDF

    irfd220

    Abstract: TA09600
    Text: h a IRFD220, IRFD221, IRFD222, IRFD223 r r i s ” “ ICONDUCTOE 0.7A and 0.8A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.7A and 0.8A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		IRFD220, IRFD221, IRFD222, IRFD223 TA09600223 irfd220 TA09600 PDF

    fd220

    Abstract: IRFD220 IRFD221 1RFD220
    Text: IRFD220,221 D82CN2.M2 iPSMM-iiæa Mûr FIELD EFFECT POWER TRANSISTOR This series of NhChannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DM OS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.


    OCR Scan     		IRFD220 P82CN2 ruggedness600 00A//US, fd220 IRFD221 1RFD220 PDF

    diode 222r

    Abstract: MOSFET 4407 a circuit 4407
    Text: 2 HARRIS IR FD 220/221/222/223 IRFD220R/221R/222R/223R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s 4-P IN DIP • 0.7 A and 0.8A , 1 5 0V - 2 0 0V TOP VIEW • rDS(on = 0 .8 H and 1 .2 Ct • Single Pulse Avalanche Energy R ated*


    OCR Scan     		IRFD220R/221R/222R/223R diode 222r MOSFET 4407 a circuit 4407 PDF

    IRFD221

    Abstract: 3203 MOSFET
    Text: MOTOROLA SC ÍXSTRS/R F} Tfl 6367254, M O T O R O L A SC XSTRS/R F öF|fc,3t7aSL( 0003202 ; . 980 63282 D IRFD220-223 T ' 3 5 ~S lS ELECTRICAL CHARACTERISTICS — C o n tin u e d (Tc - 25°C unless otherwise noted) Characteristic Symbol Min Typ Max U nit


    OCR Scan     		IRFD220-223 IRFD220, IRFD221 IRFF110 IRFF113 IRFF113 3203 MOSFET PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    IRFD110

    Abstract: IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143
    Text: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5


    OCR Scan     		O-247 O-204 O-205 O-220 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRFD110 IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143 PDF

    MPF89

    Abstract: MPF6659 2 watt fet MPF910 IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9110
    Text: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) rds (on) @ Package FET DIP P CH TYPES 1 WATT FET DIP N CH TYPES 1 WATT T0226AE N CH TYPES 1 WATT V q S (t/h) ( '0 >DSS V(BR)DSS >GSS C|ss Crss *on 'off pk (A) Min Max Max (V) Min (nA) Max


    OCR Scan     		IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9120 IRFD9121 IRFD9210 IRFD9213 IRFD91103 MPF89 MPF6659 2 watt fet MPF910 IRFD9110 PDF

    IRF540R

    Abstract: IRFP140R THOMSON DISTRIBUTOR IRF513R IRF633R THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF511R IRFD111R IRFD113R
    Text: THOMSON/ DI STR IBUTOR SflE D • TDabflTB DODSTCH TT1 ■ TCSK Power MOSFETs Rugged-Series Power MOSFETs — N-Channel Package a if1 Maximum Ratings b v DSS V >d s (A) rDS(ON) OHMS E AS (mi) 60 0.80 1 1.1 1.3 3 3.50 4 5 6 7 7 8 8 12 14 24 27 33 40 0.80


    OCR Scan     		to-204 t0-205 t0-220 to-247 IRFD113R IRFD111R IRFD123R IRFD121R IRFF113R IRFF111R IRF540R IRFP140R THOMSON DISTRIBUTOR IRF513R IRF633R THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF511R IRFD111R IRFD113R PDF

    MPF256

    Abstract: IRFD220 IRFD221 IRFD222 IRFD223 1RFD220-223 C96d 1RFD220 diode T35 -4-D6
    Text: MOTOROLA SC ÌXSTRS/R 6367254 DET|h3b?5S4 OQöSbflT 0 F> MOTOROLA SC XSTRS/R 96D F 82689 D r - z ? -'¿s' MPF256 CA SE 29-04, STYLE 5 TO-92 (TO-226AA) M A X IM U M R A T IN G S S ym bol Value U nit Drain-Source Voltage Vd S ±30 Vdc Drain-Gate Voltage Vd G


    OCR Scan     		Lj3b7E54 MPF256 O-226AA) 0j7l010l MPF256 IRFD220 IRFD221 IRFD222 IRFD223 1RFD220-223 C96d 1RFD220 diode T35 -4-D6 PDF

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 PDF

    Untitled

    Abstract: No abstract text available
    Text: • 4302271 0054110 3^fl ■ HAS IRFD220/221/222/223 IRFD220R/221R/222R/223R 2 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features 4-P IN DIP • 0.7 A and 0.8A , 150V - 2 0 0V TOP VIEW • ro s o n ) = 0 .8 fl and 1.2f2 • Single Pulse A valanche Energy R ated*


    OCR Scan     		IRFD220/221/222/223 IRFD220R/221R/222R/223R s4-406 OOS4114 IRFD220, RFD222, IRFD223 RFD220R. IRFD221R, IRFD222R, PDF