IXFN100N10 Search Results

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IXYS Corporation IXFN100N10S3 MOSFET N-CH 100V 100A SOT-227B
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DigiKey	IXFN100N10S3	Tube			10	1 - 10 $16.658 100 $16.658 1000 $16.658 10000 $16.658	Buy Now
IXYS Corporation IXFN100N10S1 MOSFET N-CH 100V 100A SOT-227B
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DigiKey	IXFN100N10S1	Tube			10	1 - 10 $16.658 100 $16.658 1000 $16.658 10000 $16.658	Buy Now
IXYS Corporation IXFN100N10S2 MOSFET N-CH 100V 100A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN100N10S2	Tube			10	1 - 10 $16.658 100 $16.658 1000 $16.658 10000 $16.658	Buy Now

IXFN100N10 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFN100N10		IXYS	HIPERFET Power MOSFTETs		Scan	PDF
IXFN100N10		Sharp	100 V, 100 A, HIPerFET power MOSFET		Scan	PDF
IXFN100N10S1		IXYS	100V HiPerFET power MOSFET with schottky diodes		Original	PDF
IXFN100N10S2		IXYS	100V HiPerFET power MOSFET with schottky diodes		Original	PDF
IXFN100N10S3		IXYS	100V HiPerFET power MOSFET with schottky diodes		Original	PDF

IXFN100N10 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IXFN100N10 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)100 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)	Original	IXFN100N10	PDF
TO-238 Abstract: sn 8400 Text: I X Y S 1ÔE CORP OOOOtaSS D 5 'T - Z ° \ A S> □IXYS A D V A N C E TEC H N IC AL DATA SH EET* December 1988 DATA SH EET NO. 1300C HiPerFET Power MOSFETs IXFN100N10 N-Channel High dv/dt, Lowtrr, H D M O S™ Family FEATURES:_	OCR Scan	1300C IXFN100N10 O-238 O-238 TO-238 sn 8400	PDF
TO-238 Abstract: vdo 007 dss100v IXFN100N10 HiperFET 013Q Text: X X 1ÖE D Y S CORP 4fc>öb22fc. G O G G b a S S □IXYS ADVANCE TECHNICAL DATA SHEET* December 1988 DATA SHEET NO. 1300C HiPerFET Power MOSFETs IXFN100N10 N-Channel High dv/dt, Lowtrr, HDMOS™ Family FEATURES:_ 100A	OCR Scan	b22fc. 1300C O-238 -40to IXFN100N10 O-238 TO-238 vdo 007 dss100v IXFN100N10 HiperFET 013Q	PDF
dioda by 238 Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100 Text: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching	OCR Scan	0D00S73 dioda by 238 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100	PDF
TL 650 ht Abstract: mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100 Text: I X Y S CÔRP lûE D • 4bSL22b Q00Q573 1 ■ f JiPerFETs_ The HIPerFET family of Power MOSFETs Is designed to provide superior dv/dt performance while eliminating th e need for discrete, fast recoveiy “free wheeling" rccllfiers in a broad range of power switching	OCR Scan	4bfid22b O-204 O-284 TL 650 ht mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100	PDF
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50	PDF