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    NDS9430 Price and Stock

    onsemi NDS9430

    MOSFET P-CH 30V 5.3A 8SOIC
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    NDS9430 Digi-Reel 1
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    Rochester Electronics LLC NDS9430

    MOSFET P-CH 30V 5.3A 8SOIC
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    onsemi NDS9430A

    MOSFET P-CH 20V 5.3A 8SOIC
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    DigiKey NDS9430A Reel 2,500
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    Rochester Electronics LLC NDS9430A

    MOSFET P-CH 20V 5.3A 8SOIC
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    DigiKey NDS9430A Bulk 485
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    Fairchild Semiconductor Corporation NDS9430

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    Bristol Electronics NDS9430 6,410
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    NDS9430 867
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    Quest Components NDS9430 3,054
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    NDS9430 693
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    Rochester Electronics NDS9430 112,979 1
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    ComSIT USA NDS9430 450
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    Component Electronics, Inc NDS9430 204
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    NDS9430 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDS9430 Fairchild Semiconductor 30 V P-Channel PowerTrench MOSFET Original PDF
    NDS9430 National Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9430 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS9430 Fairchild Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS9430 National Semiconductor Power MOSFETS SOIC-8 Dual/Single DMOS Scan PDF
    NDS9430A Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Tra Original PDF
    NDS9430A_NL Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Original PDF

    NDS9430 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NDS9430

    Abstract: No abstract text available
    Text: NDS9430 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage


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    PDF NDS9430 NDS9430

    NDS9430A

    Abstract: No abstract text available
    Text: December 1997 NDS9430A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


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    PDF NDS9430A NDS9430A

    Untitled

    Abstract: No abstract text available
    Text: NDS9430 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage


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    PDF NDS9430

    9430a

    Abstract: NDS9430A
    Text: December 1997 NDS9430A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


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    PDF NDS9430A 9430a

    NDS9430

    Abstract: No abstract text available
    Text: N February 1996 NDS9430 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


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    PDF NDS9430 NDS9430

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


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    ad5220

    Abstract: 5231B10 AD8403 FDP360P 200H AD5231 AD5231BRU10 AD5231BRU100 AD5231BRU10-REEL7 AD5231BRU50
    Text: FEATURES Nonvolatile Memory1 Preset Maintains Wiper Settings 1024-Position Resolution Full Monotonic Operation 10 k⍀, 50 k⍀, and 100 k⍀ Terminal Resistance Permanent Memory Write-Protection Wiper Settings Read Back Linear Increment/Decrement Log Taper Increment/Decrement


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    PDF 1024-Position SOL-24, TSSOP-24 AD5206 AD5231 16-Lead RU-16) C02739­ ad5220 5231B10 AD8403 FDP360P 200H AD5231 AD5231BRU10 AD5231BRU100 AD5231BRU10-REEL7 AD5231BRU50

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


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    PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


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    PDF

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


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    PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


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    PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    FDS4953

    Abstract: FDS6574A FDS4935 fds4488 fds6875 FDS3670 FDS6676 FDS6690S fds6912 FDS6975
    Text: Discrete MOSFET SO-8 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SO-8 N-Channel FDS6898A 20 Dual - 0.014 0.018 - 16 9.4 2 FDS6898AZ 20 Dual - 0.014 0.018 - 16 9.4 2 FDS6894A


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    PDF FDS6898A FDS6898AZ FDS6894A FDS6894AZ FDS6890A FDS6892A FDS6892AZ FDS6812A FDS4465 FDS6575 FDS4953 FDS6574A FDS4935 fds4488 fds6875 FDS3670 FDS6676 FDS6690S fds6912 FDS6975

    resistor 100k pin configuration

    Abstract: diode wb1 4a Wien Bridge Oscillator opamp 200H AD5233 AD5233BRU10 AD5233BRU10-REEL7 AD5233BRU50 AD5233BRU50-REEL7 DIGITALPOT
    Text: a FEATURES Nonvolatile Memory1 Preset Maintains Wiper Settings 4-Channel Independent Programmable 64-Position Resolution Full Monotonic Operation 10 k⍀, 50 k⍀, and 100 k⍀ Terminal Resistance Permanent Memory Write Protection Wiper Settings Readback Linear Increment/Decrement


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    PDF 64-Position 100-Year AD5233 24-Lead RU-24) C02794 resistor 100k pin configuration diode wb1 4a Wien Bridge Oscillator opamp 200H AD5233 AD5233BRU10 AD5233BRU10-REEL7 AD5233BRU50 AD5233BRU50-REEL7 DIGITALPOT

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


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    PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139

    Untitled

    Abstract: No abstract text available
    Text: May 1996 National Semiconductor" NDS9430 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features T hese P-C hannel e n h a n ce m e n t m o d e p o w e r fie ld e ffe ct tra n s is to rs a re p ro d u ce d using N a tio n a l's


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    PDF NDS9430

    S9430

    Abstract: IRF 810
    Text: February 1996 N NDS9430 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These • -5.3A, -20V. R ^ , = 0.06Q @ Væ = -10V. ■ High density cell design for extremely low R,'DS ON P-Channel enhancement mode power field effect


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    PDF NDS9430 NDS943Q S9430 IRF 810

    NDS9430

    Abstract: No abstract text available
    Text: May 1996 National tß Semiconductor ” NDS9430 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


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    PDF May19i NDS9430 NDS9430 bSD1130

    NDS9430

    Abstract: No abstract text available
    Text: May 1996 National tß Semiconductor ” NDS9430 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


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    PDF NDS9430 bSD1130 NDS9430

    NDS9435

    Abstract: NDS9945 NDS9410 NDS9430 NDS9400 NDS9405 NDS9407 NDS9947 NDS9948 NDS9955
    Text: D M fte c E T c / *• T> m bäE Power M OSFETS continued bSQ113G 003^4^3 OOT « N S C 5 SOIC-8 Dual/Single DMOS soice 81 NChannel NATL SEfllCOND rOS(on) (Volts) Min Device VGS= 10V Ves = 4.5V (DISCRETE) 1 •o Po (A) Max (Watts) Max Configuration Pin Out


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    PDF bSQ113Q NDS9410* NDS9945 NDS9955 NDS9956 NDS9400* NDS9405* NDS9407* NDS9430* NDS9435* NDS9435 NDS9410 NDS9430 NDS9400 NDS9405 NDS9407 NDS9947 NDS9948