Untitled
Abstract: No abstract text available
Text: HP4936DY Data Sheet August 1999 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET • Logic Level Gate Drive • 5.8A, 30V • rDS ON = 0.037Ω at ID = 5.8A, VGS = 10V • rDS(ON) = 0.055Ω at ID = 4.7A, VGS = 4.5V • Related Literature - TB334, “Guidelines for Soldering Surface Mount
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HP4936DY
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regulator 4468
Abstract: HP4410DY HP4410DYT TB334
Text: HP4410DY Data Sheet August 1999 10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET • Logic Level Gate Drive • 10A, 30V • rDS ON = 0.0135Ω at ID = 10A, VGS = 10V • rDS(ON) = 0.020Ω at ID = 8A, VGS = 4.5V • Related Literature - TB334, “Guidelines for Soldering Surface Mount
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HP4410DY
regulator 4468
HP4410DY
HP4410DYT
TB334
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4469 mosfet
Abstract: HP4936DY HP4936DYT TB334
Text: HP4936DY Data Sheet August 1999 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET • Logic Level Gate Drive • 5.8A, 30V • rDS ON = 0.037Ω at ID = 5.8A, VGS = 10V • rDS(ON) = 0.055Ω at ID = 4.7A, VGS = 4.5V • Related Literature - TB334, “Guidelines for Soldering Surface Mount
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HP4936DY
TB334,
4469 mosfet
HP4936DY
HP4936DYT
TB334
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TB334
Abstract: No abstract text available
Text: Guidelines for Soldering Surface Mount Components to PC Boards Technical Brief September 1995 TB334 Author: Maury Rosenfield The most commonly used techniques for mounting SMDs Surface Mounted Devices to PC boards are Infrared (IR) and Vapor Phase (VP) reflow. IR and VP reflow are preferred over
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TB334
260oC
1-888-INTERSIL
TB334
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PDF
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TB334
Abstract: Guidelines for Soldering Surface Mount Components to PC Boards J-STD-020A TB363
Text: Guidelines for Soldering Surface Mount Components to PC Boards TM Technical Brief October 2000 TB334.2 Author: Maury Rosenfield Introduction glass transition temperature of the epoxy in FR-4 boards should be avoided. Depending on the type of IR or VP equipment, the temperature of the component and the PC
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TB334
105oC
145oC.
Guidelines for Soldering Surface Mount Components to PC Boards
J-STD-020A
TB363
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PDF
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TB334
Abstract: No abstract text available
Text: TECH BRIEF Harris Semiconductor No. TB334 September 1995 Guidelines for Soldering Surface Mount Components to PC Boards Author: Maury Rosenfield The most commonly used techniques for mounting SMDs Surface Mounted Devices to PC boards are Infrared (IR) and
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TB334
100oC.
260oC
TB334
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regulator 4468
Abstract: HP4410DY HP4410DYT TB334
Text: HP4410DY Data Sheet August 1999 10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET • Logic Level Gate Drive • 10A, 30V • rDS ON = 0.0135Ω at ID = 10A, VGS = 10V • rDS(ON) = 0.020Ω at ID = 8A, VGS = 4.5V • Related Literature - TB334, “Guidelines for Soldering Surface Mount
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HP4410DY
regulator 4468
HP4410DY
HP4410DYT
TB334
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J-STD-020A
Abstract: TB334
Text: Application Note 7528 April 2002 TB334 Guidelines for Soldering Surface Mount Components to PC Boards 1. Introduction Special care must be taken when soldering surface mount components to a printed circuit (PC) board. There are 4 commonly used techniques for soldering surface mount components
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TB334)
J-STD-020A
TB334
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d8p05
Abstract: RFP8P05 RFD8P05 RFD8P05SM RFD8P05SM9A TB334 23842
Text: RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs 2384.2 Features • 8A, 50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,
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RFD8P05,
RFD8P05SM,
RFP8P05
TA09832.
d8p05
RFP8P05
RFD8P05
RFD8P05SM
RFD8P05SM9A
TB334
23842
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HP4936DY
Abstract: HP4936DYT TB334
Text: HP4936DY Data Sheet December 2001 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET Features • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HP4936DY
HP4936DY
HP4936DYT
TB334
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Untitled
Abstract: No abstract text available
Text: ISL9K1560G3 30 A, 600 V STEALTH Dual Diode Features Description • Stealth Recovery trr = 29.4 ns @ IF = 15 A The ISL9K1560G3 is a STEALTH™ dual diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family
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ISL9K1560G3
ISL9K1560G3
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Untitled
Abstract: No abstract text available
Text: ISL9R460PF2 4 A, 600 V, STEALTHTM Diode Features Description • Stealth Recovery trr = 17 ns @ IF = 4 A The ISL9R460PF2 is a STEALTH diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (Irr) and
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ISL9R460PF2
ISL9R460PF2
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Untitled
Abstract: No abstract text available
Text: ISL9K460P3 8 A, 600 V, STEALTHTM II Diode Features Description • Stealth Recovery trr = 17 ns @ IF = 4 A The ISL9K460P3 is a STEALTH dual diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse
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ISL9K460P3
ISL9K460P3
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IRF646
Abstract: TB334
Text: IRF646 Data Sheet January 2002 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET Features • 14A, 275V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF646
TA17423.
TB334
IRF646
TB334
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ifr120
Abstract: IFU120 IFr-120 IRFR120 IRFR120T IRFU120 TB334
Text: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRFR120,
IRFU120
TA09594.
ifr120
IFU120
IFr-120
IRFR120
IRFR120T
IRFU120
TB334
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PDF
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75631P
Abstract: AN9321 HUFA75631P3 HUFA75631S3ST TB334
Text: HUFA75631P3, HUFA75631S3ST Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Title UFA 631 Packaging JEDEC TO-220AB SOURCE DRAIN GATE UFA 631 ST bjec 3A, 0V, 40 m, ann JEDEC TO-263AB DRAIN FLANGE) GATE SOURCE
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HUFA75631S3ST
O-220AB
O-263AB
HUFA75631P3
75631P
AN9321
HUFA75631P3
HUFA75631S3ST
TB334
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7n10l
Abstract: 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
Text: RFD7N10LE, RFD7N10LESM Data Sheet Title FD7 0L, D7 0LS bt A, 0V, 00 m, an, gic vel, wer OSTs utho October 1999 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs Features These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes
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RFD7N10LE,
RFD7N10LESM
7n10l
7n10le
RFD7N10LESM
AN7254
AN7260
RFD7N10LE
RFD7N10LESM9A
TB334
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76639p
Abstract: HUF76639P3 HUF76639S3S HUF76639S3ST TB334 92e2
Text: HUF76639P3, HUF76639S3S Data Sheet November 1999 File Number 4694.3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 39P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76639P3 HUF76639S3S D rpor on, A, 0V, 27 m, ann gic
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HUF76639S3S
O-220AB
HUF76639P3
76639p
HUF76639P3
HUF76639S3S
HUF76639S3ST
TB334
92e2
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2N6796
Abstract: TB334
Text: 2N6796 Data Sheet December 2001 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor
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2N6796
2N6796
O-205AF
TB334
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2N6790
Abstract: TB334
Text: 2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 3.5A, 200V The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching
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2N6790
2N6790
O-205AF
TB334
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Untitled
Abstract: No abstract text available
Text: HPLR3103, HPLU3103 Semiconductor 52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs May 1998 Features Description • Logic Level Gate Drive These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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HPLU3103
HPLU3103
O-252AA
330mm
EIA-481
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RELAY 4088
Abstract: TB334 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L
Text: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet Title FD1 06L D14 6LS P14 6L bt A, V, 00 m, gic vel, Cha el wer OSTs) utho eyrds ter- July 1999 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using
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RFD14N06L,
RFD14N06LSM,
RFP14N06L
RELAY 4088
TB334
RFD14N06L
RFD14N06LSM
RFD14N06LSM9A
RFP14N06L
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AN9321
Abstract: HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334
Text: HUFA76413D3, HUFA76413D3S Data Sheet November 2000 File Number 4975 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUFA76413D3S HUFA76413D3
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HUFA76413D3S
O-251AA
O-252AA
HUFA76413D3
AN9321
HUFA76413D3
HUFA76413D3S
HUFA76413D3ST
TB334
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FD3055
Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
Text: RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve
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RFD3055,
RFD3055SM,
RFP3055
TA49082.
175oC
TB334
FD3055
Fp3055
IS433
4078 relay
RFP3055
TB334
AN7254
RFD3055
RFD3055SM
RFD3055SM9A
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