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A10A20 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: ADVANCED INFORMATION MX29F016 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Single power supply 5V operation for read, erase and program • Fast access time: 90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current	Original	MX29F016 16M-BIT 90/120ns 64KByte reM0590 MAR/31/1999 MAY/18/1999 JUN/02/1999 AUG/11/1999 SEP/01/1999	PDF
Untitled Abstract: No abstract text available Text: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only SURFACE MOUNT LED TAPE AND REEL Pb Lead-Free Parts LWK9553-4/TR1-CW-A01 DATA SHEET DOC. NO : QW0905-LWK9553-4/TR1-CW-A01 REV. : A DATE : 09 - Aug. - 2011 發行立碁電子 DCC LIGITEK ELECTRONICS CO.,LTD.	Original	LWK9553-4/TR1-CW-A01 QW0905-LWK9553-4/TR1-CW-A01 LWK9553-4/TR1-CW-A01 LWK9553 500hrs 30min) 30mins 15mins	PDF
29LV017B-90 Abstract: No abstract text available Text: MX29LV017B 16M-BIT [2Mx8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8 • Single power supply operation - 3.0V only operation for read, erase and program operation • Fast access time: 70/90ns	Original	MX29LV017B 70/90ns 64K-Byte PM1086 29LV017B-90	PDF
HM62W1400H Abstract: A12-A17 A8-A12 Text: HM62W1400H Series Pin Description Pin name Function A0 to A21 Address input Din Data input Dout Data output CS Chip select OE Output enable WE Write enable VCC Power supply VSS Ground NC No connection Block Diagram LSB A2 A18 A8 A12 A17 A3 A7 A6 (MSB) VCC	Original	HM62W1400H A10A20 A12-A17 A8-A12	PDF
HM62W1400H Abstract: HM62W1400HJP-12 HM62W1400HJP-15 HM62W1400HLJP-12 HM62W1400HLJP-15 HM62W1400HLTT-12 HM62W1400HLTT-15 HM62W1400HTT-12 HM62W1400HTT-15 Hitachi DSA00189 Text: HM62W1400H シリーズ 4M High Speed SRAM 4-Mword x 1-bit ADJ-203-264C (Z) ’98. 11. 11 Rev. 2.0 概要 HM62W1400H シリーズは 4M ワード×1 ビット構成の 4M ビット高速スタティック RAM です。CMOS（4 トランジスタ+ 2 ポリレジスタメモリセル）プロセス技術を採用し，高密度，高性能，低消費電力を実現し	Original	HM62W1400H ADJ-203-264C 400-mil HM62W1400HJP-12 HM62W1400HJP-15 HM62W1400HLJP-12 HM62W1400HLJP-15 HM62W1400H HM62W1400HJP-12 HM62W1400HJP-15 HM62W1400HLJP-12 HM62W1400HLJP-15 HM62W1400HLTT-12 HM62W1400HLTT-15 HM62W1400HTT-12 HM62W1400HTT-15 Hitachi DSA00189	PDF
Z 263B Abstract: HM621400H HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA00189 Text: HM621400H シリーズ 4M High Speed SRAM 4-Mword x 1-bit ADJ-203-263B (Z) ’98. 9. 15 Rev. 1.0 概要 HM6 21 40 0H シリーズは 4M ワード×1 ビット構成の 4M ビット高速スタティック RAM です。CMOS（4 トランジスタ+ 2 ポリレジスタメモリセル）プロセス技術を採用し，高密度，高性能，低消費電力を実現し	Original	HM621400H ADJ-203-263B 400-mil HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Z 263B HM621400H HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA00189	PDF
Hitachi DSA00197 Abstract: HM62W1400H HM62W1400HJP-12 HM62W1400HJP-15 HM62W1400HLJP-12 HM62W1400HLJP-15 Text: HM62W1400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-773D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM62W1400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed	Original	HM62W1400H ADE-203-773D 400-mil 32-pin HM62W1400H-10 Hitachi DSA00197 HM62W1400HJP-12 HM62W1400HJP-15 HM62W1400HLJP-12 HM62W1400HLJP-15	PDF
MX29LV017-90 Abstract: No abstract text available Text: PRELIMINARY MX29LV017A 16M-BIT [2Mx8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8 • Single power supply operation - 3.0V only operation for read, erase and program operation	Original	MX29LV017A 16M-BIT 70/90ns 64K-Byte PM0901 NOV/22/2002 MX29LV017-90	PDF
29F016 Abstract: 29F01690 29f016-90 29F016-12 MX29F016 SA10 SA11 SA12 SA13 SA14 Text: MX29F016 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Single power supply 5V operation for read, erase and program • Fast access time: 90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current • Command register architecture	Original	MX29F016 16M-BIT 90/120ns 64KByte PM0590 OCT/23/2000 JAN/08/2001 JUN/13/2001 29F016 29F01690 29f016-90 29F016-12 MX29F016 SA10 SA11 SA12 SA13 SA14	PDF
HM62W1400H Abstract: HM62W1400HJP-12 HM62W1400HJP-15 HM62W1400HLJP-12 HM62W1400HLJP-15 HM62W1400HLTT-12 HM62W1400HLTT-15 HM62W1400HTT-12 HM62W1400HTT-15 Hitachi DSA00513 Text: HM62W1400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-773E (Z) Rev. 2.0 Nov. 11, 1998 Description The HM62W1400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed	Original	HM62W1400H ADE-203-773E 400-mil 32-pin 400-mil HM62W1400H-10 HM62W1400HJP-12 HM62W1400HJP-15 HM62W1400HLJP-12 HM62W1400HLJP-15 HM62W1400HLTT-12 HM62W1400HLTT-15 HM62W1400HTT-12 HM62W1400HTT-15 Hitachi DSA00513	PDF
HM621400H Abstract: HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA0044 Text: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-787D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed	Original	HM621400H ADE-203-787D 400-mil 32-pin HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA0044	PDF
Untitled Abstract: No abstract text available Text: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only SURFACE MOUNT LED TAPE AND REEL Pb Lead-Free Parts LWK9S53-HC/TR1-NW-A01 DATA SHEET DOC. NO : QW0905-LWK9S53-HC/TR1-NW-A01 REV. : A DATE : 08 - Aug. - 2011 發行立碁電子 DCC LIGITEK ELECTRONICS CO.,LTD.	Original	LWK9S53-HC/TR1-NW-A01 QW0905-LWK9S53-HC/TR1-NW-A01 LWK9S53-HC/TR1-NW-A01 LWK9S53	PDF
16MEGA Abstract: No abstract text available Text: ADVANCED INFORMATION MX29LV017A 16M-BIT [2Mx8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8 • Single power supply operation - 3.0V only operation for read, erase and program operation	Original	MX29LV017A 70/90ns 64K-Byte bein39 PM0901 16MEGA	PDF
HM621400H Abstract: HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA00197 Text: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-787D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit	Original	HM621400H ADE-203-787D 400-mil 32-pin HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA00197	PDF

29lv017 Abstract: MX29LV017A MX29LV017B SA10 SA11 SA12 SA13 SA14 SA15 Text: MX29LV017B 16M-BIT [2Mx8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Status Reply - Data# Polling & Toggle bit for detection of program and erase operation completion. • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or	Original	MX29LV017B 16M-BIT 100mA EC/07/2004 29lv017 MX29LV017A MX29LV017B SA10 SA11 SA12 SA13 SA14 SA15	PDF
Untitled Abstract: No abstract text available Text: MX29F016 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Single power supply 5V operation for read, erase and program • Fast access time: 90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current • Command register architecture	Original	MX29F016 16M-BIT 90/120ns 64KByte OCT/23/2000 JAN/08/2001 PM0590	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY MX29F016 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Single power supply 5V operation for read, erase and program • Fast access time: 90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current	Original	MX29F016 16M-BIT 90/120ns 64KByte PM0590 44-PIN	PDF
Untitled Abstract: No abstract text available Text: HM62W1400H Series Ordering Information Type No. Access time Package HM62W1400HJP-12 HM62W1400HJP-15 12 ns 15 ns 400-mil 32-pin plastic SOJ CP-32DB HM62W1400HLJP-12 HM62W1400HLJP-15 12 ns 15 ns HM62W1400HTT-12 HM62W1400HTT-15 12 ns 15 ns HM62W1400HLTT-12	Original	HM62W1400H HM62W1400HJP-12 HM62W1400HJP-15 HM62W1400HLJP-12 HM62W1400HLJP-15 HM62W1400HTT-12 HM62W1400HTT-15 HM62W1400HLTT-12 HM62W1400HLTT-15 400-mil	PDF
HM62W1400H Abstract: HM62W1400HJP-12 HM62W1400HJP-15 HM62W1400HLJP-12 HM62W1400HLJP-15 HM62W1400HLTT-12 HM62W1400HLTT-15 HM62W1400HTT-12 HM62W1400HTT-15 Hitachi DSA00276 Text: HM62W1400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-773E (Z) Rev. 2.0 Nov. 11, 1998 Description The HM62W1400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed	Original	HM62W1400H ADE-203-773E 400-mil 32-pin 400-mil HM62W1400HJP-12 HM62W1400HJP-15 HM62W1400HLJP-12 HM62W1400HLJP-15 HM62W1400HLTT-12 HM62W1400HLTT-15 HM62W1400HTT-12 HM62W1400HTT-15 Hitachi DSA00276	PDF
HM62W1400H Abstract: HM62W1400HJP-12 HM62W1400HJP-15 HM62W1400HLJP-12 HM62W1400HLJP-15 HM62W1400HLTT-12 HM62W1400HLTT-15 HM62W1400HTT-12 HM62W1400HTT-15 Hitachi DSA0044 Text: HM62W1400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-773E (Z) Rev. 2.0 Nov. 11, 1998 Description The HM62W1400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed	Original	HM62W1400H ADE-203-773E 400-mil 32-pin 400-mil Equa50 HM62W1400HJP-12 HM62W1400HJP-15 HM62W1400HLJP-12 HM62W1400HLJP-15 HM62W1400HLTT-12 HM62W1400HLTT-15 HM62W1400HTT-12 HM62W1400HTT-15 Hitachi DSA0044	PDF
led 0402 Abstract: No abstract text available Text: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only SURFACE MOUNT LED TAPE AND REEL Pb Lead-Free Parts LWK9S53-HC/TR1-WW-A01 DATA SHEET DOC. NO : QW0905-LWK9S53-HC/TR1-WW-A01 REV. : A DATE : 08 - Aug. - 2011 發行立碁電子 DCC LIGITEK ELECTRONICS CO.,LTD.	Original	LWK9S53-HC/TR1-WW-A01 QW0905-LWK9S53-HC/TR1-WW-A01 LWK9S53-HC/TR1-WW-A01 LWK9S53 500hrs 30min) 30mins 15mins led 0402	PDF
Untitled Abstract: No abstract text available Text: MX29F016 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Single power supply 5V operation for read, erase and program • Fast access time: 90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current • Command register architecture	Original	MX29F016 16M-BIT 90/120ns 64KByte Togg29F016 OCT/23/2000 PM0590	PDF
TC534000AP Abstract: A170 DIP32 Text: M iÊ tÊ tÊ Ê a tÊ Ê t^ tÊ tÊ itÊ a Ê Ê à im K m M Ê Ê tiÈ a k 4 M BIT 512K W O R D x 8 B IT CMOS MASK ROM DESCRIPTION The TC534000AP/AF is a 4,194,304 bits read only memory organized as 524,288words by 8bits. The TC534000AP / AF is fabricated using Toshiba’s advanced CMOS technology which provides the	OCR Scan	TC534000AP/AF 288words TC534000AP 150ns, 600mil 32pia 525mil 32pin A170 DIP32	PDF
tc534000p Abstract: SOP32 525mil A12o tc534000 Text: - S — '• i « { . ' ■ 1ï » 1î ■ :3 l l j / ] ' i ï:'; ; ; ; V; E ; : r : : i 4M BIT 512K W O RD x 8 BIT CMOS MASK ROM DESCRIPTION The TC534000P/F is a 4,194,304 bits read only memory organized as 524,288words by 8bits. The TC534000P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high	OCR Scan	TC534000P/F 288words 200ns /250ns, 20ixA. 600mil 32pin tc534000p SOP32 525mil A12o tc534000	PDF

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A10A20 Datasheets Context Search

Untitled

Untitled

29LV017B-90

HM62W1400H

HM62W1400H

Z 263B

Hitachi DSA00197

MX29LV017-90

29F016

HM62W1400H

HM621400H

Untitled

16MEGA

HM621400H

29lv017

Untitled

Untitled

Untitled

HM62W1400H

HM62W1400H

led 0402

Untitled

TC534000AP

tc534000p