Connector WPC
Abstract: No abstract text available
Text: User's Guide SLVU824A – January 2013 – Revised January 2013 bq500211A bqTESLA Wireless Power TX EVM The bqTESLA wireless power transmitter evaluation module from Texas Instruments is a highperformance, easy-to-use development module for the design of wireless power solutions. The singlechannel transmitter enables designers to speed the development of their end-applications. The
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SLVU824A
bq500211A
bq51013AEVM-764
Connector WPC
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Untitled
Abstract: No abstract text available
Text: Multilayer Chip Balanced Filter – SLFBF Series Operating Temp. : -40℃~+85℃ FEATURES Small size, enable high density mounting Low insertion loss, high attenuation Surface mount type, high reliability z ● ● APPLICATIONS Mobile communication system, such as GSM, DCS, PCS, etc.
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-2R450G
2R450G
2170MHz
5000MHz
7500MHz
SLFBF21
-C01T
960MHz
1880MHz
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Untitled
Abstract: No abstract text available
Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating
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HY5116400A
HY5116400A
1AD23-10-MAY95
HY5116400AJ
HY5116400ASLJ
HY511
400AT
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Acopian Power Supply Model A24H1200
Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
Text: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5
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PCM60P
Abstract: PCM56P PCM66P PCM66P-J PCM60P cmos 20-PIN TL602 APQ-25 046J 8W-1S10
Text: Or, Call C oìtom i Service a11-tOO-548-S132 USA Only « JR W -B W O W N 16-Bit CMOS Monolithic Audio DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION • LOW COST 16-BIT 2-CHANNEL CMOS MONOLITHIC D/A CONVERTER • SINGLE SUPPLY +5V OPERATION • 50mW POWER DISSIPATION
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PCM60P
PCM66P
16-Bit
-86dB
20-PIN
PCM66P)
24-PIN
PCM60P)
PCM60P/66P
PCM56P
PCM66P
PCM66P-J
PCM60P cmos
TL602
APQ-25
046J
8W-1S10
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DU03
Abstract: HY51V16400B
Text: HY51V16400B Series •HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16400B is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY51V16400B utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V16400B
27JBSC
1AD47-00-MAY95
HY51V16400BJ
HY51V16400BSL
HY51V16400BT
DU03
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crystal 444 ndk 24
Abstract: MN101C c compiler
Text: MICROCOMPUTER MN101C MN101C28A/28C/28D/28F/28L LSI User’s Manual Pub.No.21428-022E PanaX Series is a trademark of Matsushita Electric Industrial Co., Ltd. The other corporation names, logotype and product names written in this book are trademarks or registered trademarks of their
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MN101C
MN101C28A/28C/28D/28F/28L
21428-022E
a8207
crystal 444 ndk 24
MN101C c compiler
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MN101C c compiler
Abstract: PWM space vector ANPC MN101C39 panasonic inverter air conditioner remote manual
Text: MICROCOMPUTER MN101C MN101C399/39C LSI User’s Manual Pub.No.21439-020E PanaX Series is a trademark of Matsushita Electric Industrial Co., Ltd. The other corporation names, logotype and product names written in this book are trademarks or registered trademarks of their
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MN101C
MN101C399/39C
21439-020E
MN101C c compiler
PWM space vector ANPC
MN101C39
panasonic inverter air conditioner remote manual
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Untitled
Abstract: No abstract text available
Text: June 1996 Revision 1.0 . — ' D A TA S H E E T FSA4UN324 2/4 -(60/70)J(G/S)-S 16MByte (4M x 32) CMOS DRAM Module General Description The FSA4UN324(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package with JEDEC pinout. DM4M4N320 supports 4K refresh.
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FSA4UN324
16MByte
16-megabyte
32bits,
72-pin,
DM4M4N320
DM4M2N320
MB811
168-pin
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bcm 4330
Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?
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24EB60
Abstract: transistor marking code wm9 15j100 RETMA RAILS 15EB100 B24G350 Acopian Power Supplies A050MX120 12EB120 22J100
Text: Increasing numbers of Acopian Power Supplies call for current information are now available with CE marking upon request. ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE (1 of 2) Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC
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Abstract: No abstract text available
Text: <£> February1997 Revision 1.1 ~ D A T A S H E E T - ESA8UN324 2/4 -(60/70)(J/T)(G/S)-S 32MByte (8M x 32) CMOS EDO DRAM Module General Description The ESA8UN324(2/4)-(60/70()J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module
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February1997
ESA8UN324
32MByte
32-megabyte
32bits,
72-pin,
ESA8UN3242
ESA8UN3244
MB811
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Untitled
Abstract: No abstract text available
Text: February 1997 Revision 1.1 D ATASHEET - FSA4UN324 2/4 -(60/70)J(G/S)-S 16MByte (4M x 32) CMOS DRAM Module General Description The FSA4UN324(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package with JEDEC pinout. DM4M4N320 supports 4K refresh.
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FSA4UN324
16MByte
16-megabyte
32bits,
72-pin,
DM4M4N320
DM4M2N320
MB811
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15j100 capacitor
Abstract: W28NT1000 W48NT600 15j100 RETMA RAILS p022h P012H R36W MARKING CODE WM9 12EB70
Text: ACOPIAN PROMISES TO SHIP WITHIN THREE DAYS Acopian P.O. Box 638 Easton, PA 18044-0638 . . . and we keep that promise. For more than 40 years, Acopian has been shipping AC to DC power modules within three days after receipt of an order. During this period, the Acopian line has expanded from
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Abstract: No abstract text available
Text: 93C95 ATM 25.6 MB Transceiver and Data Recovery 1C Technology, Incorporated PRELIMINARY October 3, 1996 Features • ■ Note: Check for latest Data Sheet revision before starting any designs. Integrated A TM25 PMD Sublayer Single Chip Interface Between TC Transmission
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93C95
x3051.
93C9racteristics,
MD400148/C
28-Pin
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CSD97376CQ4M
Abstract: No abstract text available
Text: User's Guide SLVU928A – September 2013 – Revised October 2013 bq500212A bqTESLA Wireless Power TX EVM The bqTESLA wireless power transmitter evaluation module from Texas Instruments is a highperformance, easy-to-use development module for the design of wireless power solutions. The singlechannel transmitter enables designers to speed the development of their end-applications. The
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bq500212A
bq51013BEVM-764
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Motorola TP182
Abstract: NFM60R30T222T1 5 pin PCB Mounted 3.5mm Stereo jack ACM0706-102-2PT SMD150/33-2 tdk ferrite pc30 C1162 NFM60R30T222 10uf 25V capacitor ACM0706
Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. MSC8101EVM User’s Manual For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. ii MSC8101EVMUM/D User’s Manual For More Information
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MSC8101EVM
MSC8101EVMUM/D
MSC8101EVM
MCS8101EVMUM/D
Motorola TP182
NFM60R30T222T1
5 pin PCB Mounted 3.5mm Stereo jack
ACM0706-102-2PT
SMD150/33-2
tdk ferrite pc30
C1162
NFM60R30T222
10uf 25V capacitor
ACM0706
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 1 6 4 1 0 •H Y U N D A I S e r ie s 4M x 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5116410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5116410 utilizes Hyundai's CMOS silicon gate process technology as well as advanced
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1ADO3-10-MAY94
Mb75Gflfl
HY5116410JC
HY5116410UC
HY5116410TC
HY5116410LTC
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A11t
Abstract: LTC 5650
Text: HY51V16100B Series - HYUNDAI 16M X 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques
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HY51V16100B
12T/BSC
1AD43-00-MAY95
HY51V16100BJ
HY51V16100BSLJ
HY51V16100BT
A11t
LTC 5650
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TMP47P421A CM OS 4-BIT M ICRO CO NTRO LLER TMP47P421ADF The 47P421A is the system evaluation LSI of 47C221A/421A with 32K bits one-time PROM. The 47P421A programs/verifies using an adapter socket to connect with PROM programmer, as it is in 2732AD.
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TMP47P421A
TMP47P421ADF
47P421A
47C221A/421A
47P421A
2732AD.
47C221
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Untitled
Abstract: No abstract text available
Text: November 1996 Revision 1.1 FUJITSU DATA SHEET FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644 supports 4K refresh. FSA4UN3642
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FSA4UN364
16MByte
16-megabyte
36bits,
72-pin,
FSA4UN3644
FSA4UN3642
MB814100C-
72-pin
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HP 450 optocoupler
Abstract: optocoupler HP 450 f A11t ul file e55361 HCPL-m456 HP 450 opto coupler
Text: Thn% HEW LETT WLZM P A C K A R D Small Outline, 5 Lead Intelligent Power Module Optocoupler Technical Data HCPL-M456 Features • Performance Specified for Common IPM Applications Over Industrial Temperature Range: -40°C to 100°C • Fast Maximum Propagation
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HCPL-M456
UL1577
E55361)
5965-3590E
5966-4943E
HP 450 optocoupler
optocoupler HP 450 f
A11t
ul file e55361 HCPL-m456
HP 450 opto coupler
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A11t
Abstract: No abstract text available
Text: TMS416400, TMS416400P, TMS417400, TMS417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS881 A - MAY 1995 - REVISEDJUNE1995 Electrical characteristics for TM S416400/P and TM S417400/P is Production Data. Electrical
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TMS416400,
TMS416400P,
TMS417400,
TMS417400P
TMS426400,
TMS426400P,
TMS427400,
TMS427400P
4194304-WORD
SMKS881
A11t
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Untitled
Abstract: No abstract text available
Text: October 1996 Revision 1.0 D A T A S H E E T - ESA 4UN324 2/4 -(60/70)(J/T)(G/S)-S 16MByte (4Mx 32) CMOS EDO DRAM Module General Description The ESA4UN324(2/4)-(60/70)(J/T)(G /S)-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module
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4UN324
16MByte
ESA4UN324
16-megabyte
32bits,
72-pin,
ESA4UN3242
ESA4UN3244
168-pin
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