HYM564400A
Abstract: No abstract text available
Text: HYM564400A N-Series 4Mx64-bit CMOS DRAM MODULE DESCRIPTION The HYM564400A is a 4M x 64-bit Fast page mode CMOS DRAM module consisting of sixteen HY5116400A in 24/28 pin SOJ or TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glassepoxy printed circuit board. 0.22§Þ decoupling are mounted for each DRAM. The
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HYM564400A
4Mx64-bit
64-bit
HY5116400A
16-bit
HYM564400ANG/ATNG/ASLNG/ASLTNG
110mW
198mW
A0-A11
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socket, 72 pin, simm
Abstract: No abstract text available
Text: HYM572A400A N-Series 4Mx72-bit CMOS DRAM MODULE DESCRIPTION The HYM572A400A is a 4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY5116400A in 24/28 pin TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted for each DRAM. The HYM572A400ATNG/ASLTNG is
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HYM572A400A
4Mx72-bit
72-bit
HY5116400A
16-bit
HYM572A400ATNG/ASLTNG
121mW
220mW
A0-A11
socket, 72 pin, simm
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Untitled
Abstract: No abstract text available
Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating
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HY5116400A
HY5116400A
1AD23-10-MAY95
HY5116400AJ
HY5116400ASLJ
HY511
400AT
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MAX7523
Abstract: No abstract text available
Text: HY5117400A, HY5116400A -HYUNDAI 4M DESCRIPTION X 4-bit CMOS DRAM ORDERING INFORMATION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode C M O S DRAMs. Fast Page mode offers high speed random access o f m em ory cells w ithin the sam e row.
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HY5117400A,
HY5116400A
HY5117400AJ
HY5117400ASLJ
HY5117400AT
HY5117400ASLT
HY5116400AJ
Y5116400ASLJ
HY5116400AT
HY5116400ASLT
MAX7523
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM H Y U N D A I DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit The HY5116400A utilizes Hyundai's CM OS silicon gate process technology as advanced circuit techniques to provide wide operating
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HY5116400A
1A023-10-MAY95
HY5116400AJ
HY5116400ASLJ
HY5116400AT
HV51164CX
HY5116400AR
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HY5116400A
Abstract: No abstract text available
Text: HY5 1 1 6 4 0 0 A S e r ie s •{H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating
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HY5116400A
04711JOOl
43c12
1AD23-10-MAY95
HY5116400AJ
HY5116400ASLJ
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TAA 691
Abstract: No abstract text available
Text: HY5116400A Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116400A
HY5116400A
HY5116400Ato
1AD23-10-MAY94
HY5116400AJ
HY5116400ASU
HY5116400Ã
HY5116400ASLT
TAA 691
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Untitled
Abstract: No abstract text available
Text: -HYUNDAI HYM572A400A N-Series 4M X 72-bit CMOS DRAM MODULE DESCRIPTION The HYM572A400A is a 4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY5116400A in 24/28 pin TSOP-ll and two 16-bit BiCMOS line drivers in TSSOP on a t68 pin glass-epoxy printed circuit board.
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HYM572A400A
72-bit
HY5116400A
16-bit
HYM572A400ATNG/ASLTNG
121mW
220mW
A0-A11
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CH371
Abstract: No abstract text available
Text: " H Y U H D ftl HYM572A400A N-Series 4Mx72-btt CMOS DRAM MODULE DESCRIPTION The HYM572A400A is a 4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY5116400A in 24/28 pin TSOPII and two 16-bit BiCMOS tin driver in TSSOP on a 168 pin glass-epoxy
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HYM572A400A
4Mx72-btt
72-bit
HY5116400A
16-bit
22nFdecoupiing
HYM572A400ATNG/ASLTNG
121mW
220mW
CH371
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM564400A N-Series 4M x 64-bit CMOS DRAM MODULE DESCRIPTION The HYM564400A is a 4M x 64-brt Fast page mode CMOS DRAM module consisting of sixteen HY5116400A in 24/28 pin SOJ or TSOF-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit
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HYM564400A
64-bit
64-brt
HY5116400A
16-bit
HYM564400ANGMTNGVASLNGyASLTNG
110mW
198mw
A0-A11
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Untitled
Abstract: No abstract text available
Text: HYM532400 N-Series •HYUNDAI 4M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532400 is a 4M x 32-bit Fast page mode CMOS DRAM Module consisting of eight HY5116400A in 24/26 pin TSOPII on a 72 pin Zig Zag Dual tabs glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is
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HYM532400
32-bit
HY5116400A
HYM532400TNG/SLTNG
A0-A11)
DQO-31)
1DE01-10-JAN95
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116400A
HY5116400Ato
1AD23-10-MAY94
HY5116400AJ
HY5116400ASLJ
HY5116400AT
HY5116400ASLT
HY5116400AR
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Untitled
Abstract: No abstract text available
Text: HYM572A410A N-Series “H Y U N D A I 4M X 72-bit CMOS DRAM MODULE DESCRIPTION The HYM572A410A is a 4M x 72-bit Fast page m ode CMOS DRAM m odule consisting of eighteen HY5117400A in 24/28 pin TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board.
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HYM572A410A
72-bit
HY5117400A
16-bit
HYM572A410ATNG/ASLTNG
DQ0-DQ72)
1EE11-10-DEC94
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BEDO RAM
Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE
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HY531000A.
HY534256A.
16-bit.
HY5216257.
x16-bit.
DB101-20-MAY95
BEDO RAM
hy5118160b
HY512264
HY5117404
HY5118164B
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r4kf
Abstract: HY53C464LS fr4k HY53C256LS HY531000J
Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S
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256Kx
64Kx4)
HY53C256S
HY53C256LS
HY53C256F
HY53C256LF
HY53C464S
HY53C464LS
HY53C464F
HY53C464LF
r4kf
fr4k
HY531000J
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AUO-PL321.60
Abstract: HY51V18164B HY514264 HY514260
Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP
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HY531000AS
HY531000ALS
HY531000AJ
HY531000ALJ
HY534256AS
HY534256ALS
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
AUO-PL321.60
HY51V18164B
HY514264
HY514260
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HY5118160JC
Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM
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HYM581000BM
HYM591000BM
SPEEp50/60/70
HY514400AJ
HY514400AJX2
HY531000AJX1
HYM584000AM
HYM584000DM
HYM594000AM
HYM594000DM
HY5118160JC
HY531000AJ
HY-53
HYM591000B
HYM536100AM
HYM532120W
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HY5118160
Abstract: 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit
Text: “HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS 2. PRODUCT QUICK REFERENCE GUIDE
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256K-bits
HY53C256.
HY53C464
HY531000.
DB101-20-MAY94
HY5118160
256K 4bit DRAM
HY514260
HY51426
HY51V16100
HY531000
4K x 1 DRAM
256k 8bit
512k 4bit
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Untitled
Abstract: No abstract text available
Text: • • H Y U N D A I H Y 5 1 1 6 4 1 0 A S e r ie s 4M x 4-bit CMOS DRAM with WPB DESCRIPTION The HY5116410A is the new generation and last dynamic RAM organized 4,194,304 x 4-bit. The HY5116410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116410A
HY5116410A
HY5116410Ato
performanc00
1AD24-10-MAY94
HY5116410AJ
HY5116410ASLJ
HY511641
HY5116410ASLT
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HY51V18164
Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC
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256Kx4)
256x8)
128Kx16)
HY534256AJ
HY534256ALJ
HY512800J
HY512800LJ
HY512800SLJ
HY512264JC
HY512264LJC
HY51V18164
HY5118164
HY514260
HY51V65400
HY51V17804CJ
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d 100 d
Abstract: Y514100A HYM532220
Text: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"
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HYM5V64104AX/ATX
HYM5V64124AX/ATX
HYM5V64100AN/ATN
HYM5V64100AX/ATX
HYM5V64120AX/ATX
HYMSV72103AN/ATN
HYM5V72A100ATN
HYM5V72A120ATX
HY51V16164B
HY51V18164BJ/BT
d 100 d
Y514100A
HYM532220
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Untitled
Abstract: No abstract text available
Text: • H jjjH DRAM MODULE 5V SIMM TYPE SIZE 72 Pin 32MB As of '96.3Q DESCRIPTION. 8M X 32 SIM M 8M X 36 K PART NO. SPEED REF. DEVICE USED EDO.SL H Y M 532814A M /A T M 6 0 /7 0 /8 0 2K HY5117404AJ/AT x 16 FPM.SL H Y M 532810A M /A T M 5 0 /6 0 /7 0 2K HY5117400AJ/AT x 16
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32814A
32810A
536A804AM
HYM536A814AM
36810A
HY5117404AJ/AT
HY5117400AJ/AT
HY5116404AJ
HY5117404AJ
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