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    Infineon Technologies AG PTFA241301E-V1

    RF MOSFET LDMOS 28V H-30260-2
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    DigiKey PTFA241301E-V1 Tray
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    Infineon Technologies AG PTFA241301EV1

    130 W, 2420-2480 MHZ THERMALLY-ENHANCED HIGH POWER RF LDMOS FET RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA PTFA241301EV1 24
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    A241301E Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: A241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The A241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000,


    Original     		PDF PTFA241301E PTFA241301F 130-watt, CDMA2000, H-30260-2 H-31260-2

    Untitled

    Abstract: No abstract text available
    Text: A241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The A241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA and CDMA2000


    Original     		PDF PTFA241301E PTFA241301F 130-watt, CDMA2000 PTFA241301F*

    PTFA241301F

    Abstract: PTFA241301E LM7805 BCP56 A241301e H-30260-2
    Text: A241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The A241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000,


    Original     		PDF PTFA241301E PTFA241301F PTFA241301E PTFA241301F 130-watt, CDMA2000, CDMA2000 LM7805 BCP56 A241301e H-30260-2