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    PTFA241301E Price and Stock

    Infineon Technologies AG PTFA241301E-V1

    RF MOSFET LDMOS 28V H-30260-2
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    DigiKey PTFA241301E-V1 Tray
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    Infineon Technologies AG PTFA241301EV1

    130 W, 2420-2480 MHZ THERMALLY-ENHANCED HIGH POWER RF LDMOS FET RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA PTFA241301EV1 24
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    PTFA241301E Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFA241301E Infineon Technologies 2400 MHz to 2700 MHz; Package: PG: H-30260-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,420.0 - 2,480.0 MHz; P1dB (typ): 130.0 W; Supply Voltage: 28.0 V; Original PDF
    PTFA241301E V1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 130W H-30260-2 Original PDF
    PTFA241301EV1 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 130W H-30260-2 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000,


    Original     		PDF PTFA241301E PTFA241301F 130-watt, CDMA2000, H-30260-2 H-31260-2

    Untitled

    Abstract: No abstract text available
    Text: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA and CDMA2000


    Original     		PDF PTFA241301E PTFA241301F 130-watt, CDMA2000 PTFA241301F*

    PTFA241301F

    Abstract: PTFA241301E LM7805 BCP56 A241301e H-30260-2
    Text: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000,


    Original     		PDF PTFA241301E PTFA241301F PTFA241301E PTFA241301F 130-watt, CDMA2000, CDMA2000 LM7805 BCP56 A241301e H-30260-2

    PG-DSO-20

    Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
    Text: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test


    Original     		PDF PG-DSO-20 PG-RFP-10 H-34265-8 H-33265-8 H-30248-2 H-36248-2 H-33288-2 H-31248-2 H-37248-2 H-34288-2 PG-DSO-20 a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Text: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


    Original     		PDF PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503