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Advanced Semiconductor Inc AGR09090EF RF MOSFET Transistors 865-960MHz 105Watt Gain 17.8dB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	AGR09090EF					1 $76.43 10 $64.96 100 $60.39 1000 $60.39 10000 $60.39	Get Quote

AGR09090EF Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AGR09090EF		Agere Systems	FET Transistor, 90W, 921MHz-960MHz, N-Channel E-Mode, Lateral MOSFET Transistor		Original	PDF
AGR09090EF		Agere Systems	90 W, 865 MHz - 960 MHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF

AGR09090EF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mosfet 1412 Abstract: No abstract text available Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09090EF Hz--960 DS03-202RFPP mosfet 1412	PDF
100B100JW500X Abstract: AGR09090EF JESD22-C101A Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09090EF Hz--960 AGR09090EF DS04-058RFPP DS04-029RFPP) 100B100JW500X JESD22-C101A	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	AGR09090EF Hz--960 DS04-134RFPP DS04-068RFPP)	PDF
Johanson Technology Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09090EF Hz--960 DS04-029RFPP DS04-005RFPP) Johanson Technology	PDF
AGR09090EF Abstract: JESD22-C101A ZX18 grm40x7r103k100al Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	AGR09090EF Hz--960 AGR09090EF DS04-153RFPP DS04-134RFPP) JESD22-C101A ZX18 grm40x7r103k100al	PDF
100B100JW500X Abstract: No abstract text available Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	AGR09090EF Hz--960 Hz--895 DS04-134RFPP DS04-068RFPP) 100B100JW500X	PDF
100B120JW500X Abstract: grm40x7r103k100al 100B470JW500X 100B100JW500X Text: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	AGR09090EF Hz--960 DS04-068RFPP DS04-064RFPP) 100B120JW500X grm40x7r103k100al 100B470JW500X 100B100JW500X	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 921 MHz—960 MHz, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	AGR09090EF Hz--960 Hz--895 Therma10-12, DS04-064RFPP DS04-058RFPP)	PDF
j0947 Abstract: AGR09090EF JESD22-C101A ZX18 ZO 109 wa 100B100JW500X Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	AGR09090EF Hz--960 AGR09090EF Typic14 Hz--895 j0947 JESD22-C101A ZX18 ZO 109 wa 100B100JW500X	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet October 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09090EF Hz--960 T210-12, DS04-005RFPP DS03-202RFPP)	PDF
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM	PDF