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Kyocera AVX Components 100B120JW500XT1K CAP CER 12PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B120JW500XT1K	Cut Tape	146		1	1 $4.86 10 $3.263 100 $2.417 1000 $2.07308 10000 $2.07308	Buy Now
	100B120JW500XT1K	Digi-Reel	146		1	1 $4.86 10 $3.263 100 $2.417 1000 $2.07308 10000 $2.07308	Buy Now
	100B120JW500XT1K	Reel			1,000	1 - 10 - 100 - 1000 $3.60654 10000 $3.46578	Buy Now
Avnet Americas	100B120JW500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B120JW500XT1K					1 - 10 - 100 - 1000 $2.47 10000 $2.47	Get Quote
Richardson RFPD	100B120JW500XT1K				1,000	1 - 10 - 100 - 1000 $2.7 10000 $2.4	Buy Now
Kyocera AVX Components 100B120JW500XTV MLC A/B/R - Custom Tape W/Leader (Alt: 100B120JW500XTV)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B120JW500XTV	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B120JW500XTV					1 - 10 - 100 - 1000 $3.12 10000 $3.11	Get Quote
Kyocera AVX Components 100B120JW500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B120JW500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B120JW500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B120JW500XT		554			1 $5.49 10 $4.72 100 $3.71 1000 $3.09 10000 $3.09	Buy Now
TTI	100B120JW500XT	Reel			500	1 - 10 - 100 - 1000 $3.06 10000 $3.06	Buy Now
Richardson RFPD	100B120JW500XT				500	1 - 10 - 100 - 1000 $2.7 10000 $2.4	Buy Now
Kyocera AVX Components 100B120JW500XC100 MLC A/B/R - Waffle Pack (Alt: 100B120JW500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B120JW500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B120JW500XC100					1 $6.02 10 $5.18 100 $3.87 1000 $3.13 10000 $3.07	Get Quote
Richardson RFPD	100B120JW500XC100		53		200	1 - 10 - 100 - 1000 $2.7 10000 $2.4	Buy Now
Kyocera AVX Components 100B120JW500XTV1K Silicon RF Capacitors / Thin Film MLC A/B/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	100B120JW500XTV1K					1 - 10 - 100 - 1000 $2.57 10000 $2.57	Get Quote

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100B120JW500X Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100B120JW500XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 12PF 500V P90 1111		Original	PDF
100B120JW500XT1K		American Technical Ceramics	Ceramic Capacitor 12PF 500V P90 1111		Original	PDF

100B120JW500X Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mosfet 1412 Abstract: No abstract text available Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09090EF Hz--960 DS03-202RFPP mosfet 1412	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet October 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09070EF Hz--960 AGR09070EF DS04-007RFPP DS03-059RFPP)	PDF
100B100JW500X Abstract: AGR09090EF JESD22-C101A Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09090EF Hz--960 AGR09090EF DS04-058RFPP DS04-029RFPP) 100B100JW500X JESD22-C101A	PDF
C20 CT Abstract: 100B220 sprague CT series Text: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09070EF Hz--960 AGR09070EF DS04-057RFPP DS04-027RFPP) C20 CT 100B220 sprague CT series	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	AGR09090EF Hz--960 DS04-134RFPP DS04-068RFPP)	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR18090E Characteristic10-12, DS04-033RFPP DS02-326RFPP)	PDF
Johanson Technology Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09090EF Hz--960 DS04-029RFPP DS04-005RFPP) Johanson Technology	PDF
926 sprague Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09070EF Hz--960 AGR09070EF DS04-057RFPP DS04-027RFPP) 926 sprague	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09070EF Hz--960 AGR09070EF DS04-027RFPP DS04-007RFPP)	PDF
18-12 049 transistor Abstract: Transistor J182 TRANSISTOR Z10 100B100JW500X AGR18090E AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-A114 RF POWER TRANSISTOR Text: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR18090E AGR18090E amplR21090U AGR18090EF AGR18090F M-AGR21090F 12-digit 18-12 049 transistor Transistor J182 TRANSISTOR Z10 100B100JW500X AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-A114 RF POWER TRANSISTOR	PDF
J182 transistor Abstract: "RF Power Amplifier" AGR18090EF 100B100JW500X AGR18090E AGR18090EU C1812C105K5RACTR JESD22-C101A Text: Preliminary Data Sheet April 2004 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR18090E AGR18090E DS04-157RFPP DS04-104RFPP) J182 transistor "RF Power Amplifier" AGR18090EF 100B100JW500X AGR18090EU C1812C105K5RACTR JESD22-C101A	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet July 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09070EF Hz--960 AGR09070EF DS03-059RFPP DS03-011RFPP)	PDF
J083 Abstract: No abstract text available Text: Preliminary Data Sheet January 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09070EF Hz--960 AGR09070EF DS03-011RFPP DS02-221RFPP) J083	PDF
100B100JW500X Abstract: AGR09070EF JESD22-C101A 100B100JW500 Text: Preliminary Data Sheet April 2004 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09070EF Hz--960 AGR09070EF DS04-151RFPP DS04-057RFPP) 100B100JW500X JESD22-C101A 100B100JW500	PDF

AGR18090EF Abstract: No abstract text available Text: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR18090E AGR18090EF	PDF
100B100JW500X Abstract: No abstract text available Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	AGR09090EF Hz--960 Hz--895 DS04-134RFPP DS04-068RFPP) 100B100JW500X	PDF
100B120JW500X Abstract: grm40x7r103k100al 100B470JW500X 100B100JW500X Text: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	AGR09090EF Hz--960 DS04-068RFPP DS04-064RFPP) 100B120JW500X grm40x7r103k100al 100B470JW500X 100B100JW500X	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 921 MHz—960 MHz, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	AGR09090EF Hz--960 Hz--895 Therma10-12, DS04-064RFPP DS04-058RFPP)	PDF
Transistor J182 Abstract: No abstract text available Text: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR18090E DS02-326RFPP Transistor J182	PDF
j0947 Abstract: AGR09090EF JESD22-C101A ZX18 ZO 109 wa 100B100JW500X Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	AGR09090EF Hz--960 AGR09090EF Typic14 Hz--895 j0947 JESD22-C101A ZX18 ZO 109 wa 100B100JW500X	PDF
100B100JW500X Abstract: AGR09070EF JESD22-C101A grm40x7r103k100al Text: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09070EF Hz--960 AGR09070EF perform26 100B100JW500X JESD22-C101A grm40x7r103k100al	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet October 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09090EF Hz--960 T210-12, DS04-005RFPP DS03-202RFPP)	PDF
100B100JW500X Abstract: AGR18090E AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-C101A Text: Preliminary Data Sheet February 2004 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR18090E AGR18090E DS04-104RFPP DS04-033RFPP) 100B100JW500X AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-C101A	PDF

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100B120JW500X Price and Stock

Kyocera AVX Components 100B120JW500XT1K

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Kyocera AVX Components 100B120JW500XTV1K

100B120JW500X Datasheets (2)

100B120JW500X Datasheets Context Search

mosfet 1412

Untitled

100B100JW500X

C20 CT

Untitled

Untitled

Johanson Technology

926 sprague

Untitled

18-12 049 transistor

J182 transistor

Untitled

J083

100B100JW500X

AGR18090EF

100B100JW500X

100B120JW500X

Untitled

Transistor J182

j0947

100B100JW500X

Untitled

100B100JW500X