AGR21045EF
Abstract: AGR21045XF JESD22-C101A
Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and
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AGR21045EF
AGR21045EF
DS04-241RFPP
DS04-178RFPP)
AGR21045XF
JESD22-C101A
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J964
Abstract: AGR21045EF AGR21045XF JESD22-C101A
Text: Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and
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AGR21045EF
AGR21045EF
CGR21045EF
AGR21045XF
21045F
12-digit
J964
AGR21045XF
JESD22-C101A
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J964
Abstract: No abstract text available
Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and
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AGR21045EF
J964
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet August 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21045E
AGR21045EU
AGR21045EF
DS02-380RFPP
DS02-276RFPP)
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AGR21045E
Abstract: AGR21045EF AGR21045EU JESD22-C101A 178rf
Text: Data Sheet May 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21045E
AGR21045E
AGR21045EU
AGR21045EF
car18109-9138
DS04-178RFPP
DS04-164RFPP)
AGR21045EF
AGR21045EU
JESD22-C101A
178rf
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AGR21045E
Abstract: AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems
Text: Preliminary Data Sheet April 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21045E
AGR21045E
AGR21045EU
AGR21045EF
DS04-164RFPP
DS04-037RFPP)
AGR21045EF
AGR21045EU
JESD22-C101A
100B8
Agere Systems
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AGRA10EM
Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station
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CA03-005RFPP-7
CA03-005RFPP-6)
AGRA10EM
APP550
APP550TM
AGR09085EF
APP550TM and APP530TM
400-kHz
agra 30
TAAD08JU2
AGR09030EF
AGR09030GUM
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AGR21045E
Abstract: AGR21045EF AGR21045EU JESD22-C101A IMD3 equivalent
Text: Preliminary Data Sheet November 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21045E
AGR21045E
AGR21045EU
AGR21045EF
DS04-037RFPP
DS02-380RFPP)
AGR21045EF
AGR21045EU
JESD22-C101A
IMD3 equivalent
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