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Microchip Technology Inc APT8075BN MOSFET N-CH 800V 13A TO247AD
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DigiKey	APT8075BN	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc APT8075BVRG Transistor MOSFET N-Channel 800V 12A 3-Pin TO-247 - Rail/Tube (Alt: APT8075BVRG)
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Avnet Americas	APT8075BVRG	Tube		26 Weeks	40	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	APT8075BVRG		38			1 $15.54 10 $15.54 100 $13.44 1000 $13.44 10000 $13.44	Buy Now
Newark	APT8075BVRG	Bulk			40	1 $15.54 10 $15.54 100 $13.44 1000 $12.61 10000 $12.61	Buy Now
NAC	APT8075BVRG	Tube			41	1 $14.44 10 $14.44 100 $14.44 1000 $14.44 10000 $14.44	Buy Now
Microchip Technology Inc APT8075DNR MOSFET MOS 4 Rugged 800 V 750 mOhm DIE, Projected EOL: 2044-04-30
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Microchip Technology Inc	APT8075DNR			30 Weeks		1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc APT8075BNG MOSFET MOS 4 800 V 750 mOhm TO-247, Projected EOL: 2025-05-28
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Microchip Technology Inc	APT8075BNG			30 Weeks		1 - 10 - 100 - 1000 - 10000 -	Buy Now
Richardson RFPD	APT8075BNG				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Advanced Power Technology APT8075BN POWER FIELD-EFFECT TRANSISTOR, 13A I(D), 800V, 0.75OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	APT8075BN		519			1 $12 10 $12 100 $12 1000 $6.48 10000 $6.48	Buy Now

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APT8075 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF
APT8075	Advanced Power Technology	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.	Original	PDF
APT8075	Advanced Power Technology	TRANSISTOR,MOSFET,N-CHANNEL	Scan	PDF
APT8075AN	Advanced Power Technology	Power MOS IV	Scan	PDF
APT8075BN	Advanced Power Technology	N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET	Original	PDF
APT8075BN	Microsemi	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 13A TO247AD	Original	PDF
APT8075BN	Advanced Power Technology	Power MOS IV - N-channel Enhancement Mode High Voltage Power MOSFETS	Scan	PDF
APT8075BNR	Advanced Power Technology	Power MOS IV	Scan	PDF
APT8075BVFR	Advanced Power Technology	High voltage N-Channel enhancement mode power MOSFET	Original	PDF
APT8075BVFR	Microsemi	Power MOS V FREDFET	Original	PDF
APT8075BVR	Advanced Power Technology	High voltage N-Channel enhancement mode power MOSFET	Original	PDF
APT8075DN	Advanced Power Technology	APT Power MOS IV Commercial and Custom DIE	Scan	PDF

APT8075 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
APT8075BVFR Abstract: No abstract text available Text: APT8075BVFR Ω 12A 0.750Ω 800V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT8075BVFR O-247 O-247 APT8075BVFR
APT8075BVR Abstract: No abstract text available Text: APT8075BVR 800V 12A 0.750Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.	Original	PDF	APT8075BVR O-247 O-247 APT8075BVR
Untitled Abstract: No abstract text available Text: APT8075BVFR 12A 0.750Ω 800V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT8075BVFR O-247 O-247
8075bn Abstract: apt8075bn 8090BN APT8090BN Text: D TO-247 G S POWER MOS IV APT8075BN 800V 13.0A 0.75Ω APT8090BN 800V 12.0A 0.90Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise specified. MAXIMUM RATINGS APT 8075BN APT 8090BN UNIT Drain-Source Voltage	Original	PDF	O-247 APT8075BN APT8090BN 8075BN 8090BN O-247AD 8075bn 8090BN
8075b Abstract: No abstract text available Text: D TO-247 G S POWER MOS IV APT8075BN 800V 13.0A 0.75Ω Ω APT8090BN 800V 12.0A 0.90Ω Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage	Original	PDF	O-247 APT8075BN APT8090BN 8075BN 8090BN O-247AD 8075b
Untitled Abstract: No abstract text available Text: A dvanced P ow er Te c h n o l o g y O D U/ O S APT8075SN Ù 800V 13.0A 0.75Q POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage	OCR Scan	PDF	APT8075SN
LD 7575 PS Abstract: 8075AN APT8075AN APT7575AN APT8090AN APT7590AN G0004 Text: ADVANCFD POIilFR TECHNOLOGY M'ìE 0 2 5 7 cl 0 cì D 0000MÖ4 I AVP 7 DB A d va n c ed POWER Te c h n o lo g y APT8075AN 800V 11.5A 0.75 APT7575AN 750V 11.5A 0.75 n APT8090AN 800V 10.5A 0.90 Q, APT7590AN 750V 10.5A 0.90 £2 O D "P3fl-\S O S POWER MOS IV	OCR Scan	PDF	0257CI0CI 0000MÃ APT8075AN APT7575AN APT8090AN APT7590AN 7575AN 8075AN 7590AN 8090AN LD 7575 PS G0004
APT8075BVR Abstract: No abstract text available Text: APT8075BVR A d van ced P o w er Te c h n o l o g y ' 800V 12A 0.750ÌÌ POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V	OCR Scan	PDF	APT8075BVR O-247 APT8075BVR MIL-STD-750 --12A O-247AD
Untitled Abstract: No abstract text available Text: A dvanced po w er Te c h n o l o g y * APT8075BNR 800V 13.0A 0.75Í2 APT8090BNR 800V 12.0A 0.90ÍÍ O D O S POWER MOS IV« AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS Parameter APT8075BNR APT8090BNR UNIT	OCR Scan	PDF	APT8075BNR APT8090BNR APT8075BNR APT8090BNR APT8075/8090BNR
APT901RBN Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN Text: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN A PT8090BN APT801R2BN A PT801R4BN APT802RBN A PT802R4BN APT7575BN	OCR Scan	PDF	000027b APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT3520BN
APT5025AN Abstract: APT4020AN APT6040AN APT1002RAN APT1003R5AN APT3540AN APT4525AN apt5025 APT902R4AN apt902ran Text: A D V A N C E D PO W E R T E C H N O L O G Y APT PA R T NUMBER APT1001 RAN APT1001R2AN APT1002RAN APT1002R4AN APT1003R5AN APT1004R2AN APT901RAN APT901R2AN APT902RAN APT902R4AN APT903R5AN APT904R2AN APT8075AN APT8090AN APT801R2AN APT801R4AN APT802RAN APT802R4AN	OCR Scan	PDF	0000S75 APT1001 APT1001R2AN APT1002RAN APT1002R4AN APT1003R5AN APT1004R2AN APT901RAN APT901R2AN APT902RAN APT5025AN APT4020AN APT6040AN APT3540AN APT4525AN apt5025 APT902R4AN
Untitled Abstract: No abstract text available Text: ADVANCED P o w er Te c h n o l o g y • APT8075SN 800V 13.0A 0.75Q POWER MOS IV' N -CH A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: T c = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT8075SN	OCR Scan	PDF	APT8075SN
090Q Abstract: 0S3C APT8075HN 80-75H 8075HN Text: ADVANCED POIilER TECHNOLOGY b lE D • 0E57TCH 0000825 flTfl H A V P A dvanced P o w er Te c h n o lo g y POWER MOS IV _ APT8075HN 800V 11.5A 0.75Q APT7575HN 750V 11.5A 0.75D APT8090HN 800V 10.5A 0.90Q APT7590HN750V 10.5A 0.90Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	OCR Scan	PDF	0E57TCH APT8075HN APT7575HN APT8090HN APT7590HN750V 7575HN 8075HN 7590HN 8090HN O-258AA 090Q 0S3C 80-75H
8075bn Abstract: 8075b APT7575BN APT7590BN APT8075BN APT8090BN 090Q 7575b Text: O D Ô s ADVANCED P ow er T e c h n o lo g y 9 APT8075BN APT7575BN APT8090BN APT7590BN POWER MOS IVfi 800V 750V 8Q0V 750V 13.0A 13.0A 12.0A 12.0A 0.75Q Q.75Q 0.90Q 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.	OCR Scan	PDF	APT8075BN APT7575BN APT8090BN APT7590BN 7575BN 8075BN 7590BN 8090BN O-247AD 8075b 090Q 7575b

APT8075BNR Abstract: Kennedy Text: A dvanced P ow er Tec h n o lo g y 8 O D APT8075BNR APT8090BNR O s H?'w e r m o s n a 800V 13.0A 0.75fi 800V 12.0 A 0.90Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	PDF	APT8075BNR APT8090BNR APT8075/8090BNR O-247AD Kennedy
LD 7575 PS Abstract: 8075an APT8075AN 7590 8090 apt8090an APT7575AN APT7590AN APT8075 8090A Text: ADVANCFD POWFR TECHNOLOGY QEST'ID'I GQODMÔM 7Ü5 • AVP M'ìE 1> AD VAN CED P O W ER 'Xm - \ S Tec h n o lo g y APT8075AN APT7575AN APT8090AN APT7590AN POWER MOS IV 800V 750V 800V 750V 11.5A 11.5A 10.5A 10.5A 0.75 0.75 0.90 0.90 £i Í2 £2 fl N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	OCR Scan	PDF	0000MÃ APT8075AN APT7575AN APT8090AN APT7590AN 7575AN 8075AN 7590AN 8090AN O-204AA) LD 7575 PS 7590 8090 APT8075 8090A
090Q Abstract: t8075 t80-75 8075bn APT6076 Text: O A D d v a n c e d P o w er T e c h n o lo g y 9 APT8075BN APT7575BN APT8090BN APT7590BN Ô S POWER MOS IV 800V 750V 800V 750V 13.0A 13.0A 12.0A 12.0A 0.75Q 0.75Q 0.90Q 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATING S All Ratings: T c = 25°C unless otherwise specified	OCR Scan	PDF	APT8075BN APT7575BN APT8090BN APT7590BN 7575BN 8075BN 7590BN 8090BN APT8075/7575/8090/7590BN APT6076^ 090Q t8075 t80-75 APT6076
090Q Abstract: 8075BN Text: O A dvanced R ow er Te c h n o lo g y D APT8075BN APT7575BN APT8090BN APT7590BN ô s 5 5 w e r m o s rm 800V 750V 800V 750V 13.0A 13.0A 12.0A 12.0A 0.75Í2 0.75Í1 0.90n 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	PDF	APT8075BN APT7575BN APT8090BN APT7590BN 7575BN 8075BN 7590BN 8090BN APT8075/7575/8090/7590BN APT8075/8090BN 090Q
APT5085BN Abstract: APT501R1BN APT801R2BN APT5025BN APT1002R4BN Text: ADVANCED APT PA R T NUM BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN APT8090BN APT801R2BN APT801R4BN APT802RBN APT802R4BN APT7575BN APT7S90BN APT751R2BN	OCR Scan	PDF	0GDD27b APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN O-247 APT5085BN APT501R1BN APT801R2BN APT5025BN
diode 22 16Q Abstract: No abstract text available Text: APT8075BVR • R A dvanced W .\A p o w e r Te c h n o l o g y “ soov i2 a 0.750Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	OCR Scan	PDF	APT8075BVR O-247 diode 22 16Q
Untitled Abstract: No abstract text available Text: A dvanced P o w er Te c h n o l o g y OD OS POWER MOS IV® APT8075BN 800V 13.0A 0.75Í1 APT8090BN 800V 12.0A 0.90Í1 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: T c = 25°C unless otherwise specified.	OCR Scan	PDF	APT8075BN APT8090BN 8075BN 8090BN APT8075/8090BN O-247AD
Untitled Abstract: No abstract text available Text: A dvanced P ow er Te c h n o lo g y O D APT8075BN APT7575BN APT8090BN APT7590BN Ó S POWER MOS IVe 800V 750V 800V 750V 13.0A 13.0A 12.0A 12.0A 0.75Q 0.75Q 0.90Í2 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.	OCR Scan	PDF	APT8075BN APT7575BN APT8090BN APT7590BN 8075BN 7590BN 7575BN 8090BN Na06SÂ /0608/SÂ
APT8075BNR Abstract: APT8090BNR Text: O D O S A d va n ced R o w er Te c h n o l o g y APT8075BNR APT8090BNR POWER MOS IV' 800V 800V 13.0A 0.75ÍÍ 12.0A 0.90ÍÍ AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATING S Symbol VDSS All Ratings: T c = 25°C unless otherwise specified.	OCR Scan	PDF	APT8075BNR APT8090BNR O-247AD
Untitled Abstract: No abstract text available Text: A d v a n ced P o w er Te c h n o l o g y O D Ô S APT8075BNR APT8090BNR 800V 800V POWER MOS IVe 13.0A 0.7512 12.0A 0.90U UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V Parameter 'd C ontinuous Drain C urrent @ Tc - 25°C	OCR Scan	PDF	APT8075BNR APT8090BNR APT8075BNR APT8090BNR MIL-STD-750 T0-247AD

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APT8075 Price and Stock

Microchip Technology Inc APT8075BN

Microchip Technology Inc APT8075BVRG

Microchip Technology Inc APT8075DNR

Microchip Technology Inc APT8075BNG

Advanced Power Technology APT8075BN

APT8075 Datasheets (11)

APT8075 Datasheets Context Search

APT8075BVFR

APT8075BVR

Untitled

8075bn

8075b

Untitled

LD 7575 PS

APT8075BVR

Untitled

APT901RBN

APT5025AN

Untitled

090Q

8075bn

APT8075BNR

LD 7575 PS

090Q

090Q

APT5085BN

diode 22 16Q

Untitled

Untitled

APT8075BNR

Untitled