Untitled
Abstract: No abstract text available
Text: AT00510 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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AT00510
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2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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F2002:
F2003:
F2004:
2SC3355 SPICE MODEL
transistor C2003
C319B
MGF1412
RF TRANSISTOR 10GHZ
MRF134 rf model .lib file
2SK571
MGF1402
MRF9331
pb_hp_at41411_19921101
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AT-60500
Abstract: AT-01635 AT-21400 AT21400 AT-60586
Text: Silicon Bipolar Transistors Low Noise Transistors Typical Specifications at +25°C Case Temperature Part Number Test Freq. (GHz) NF0 (dB) PldB (dBm) I 21eI2 @ 1.0 GHz (dB) Max. Usable Freq.M (GHz) w* (GHz) AT-41400 AT-60100 AT-60200 AT-60500 2.0 2.0 2.0
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AT-41400
AT-60100
AT-60200
AT-60500
AT-41410
AT-41470
AT-60S10
AT-60S70
AT-41435
AT-41472
AT-01635
AT-21400
AT21400
AT-60586
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AT00510
Abstract: at-00510 TRANSISTOR MAC 223
Text: HEWLETT-PACKARD/ H EW LETT Whn% w 'rm Cf l PNTS PACKARD b l E I> • AT-00510 4447564 427 Up to 4 GHz General Purpose Silicon Bipolar Transistor Features • • • • • 0010473 100 mil Package 16.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical GidB at 2.0 GHz
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AT-00510
AT00510
TRANSISTOR MAC 223
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HRMA-0470B
Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic
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E-28230
S-164
CH-8902
HRMA-0470B
Semicon volume 1
HPMA-2085
HP 33002A
AVANTEK ATF26884
SJ 2036
HPMA-0470TXV
HPMA-0485
HPMA-0370
DIODE GOC 61
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Untitled
Abstract: No abstract text available
Text: AVANTEK I N C 20E 0A V A N TEK D im n tb QGQb43T 1 AT-00510 Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 100 mit Package Features • 16.0 dBm typical Pi dB at 2.0 GHz • • • • 10.5 dB typical Gi dB at 2.0 GHz 2.5 dB typical NF0 at 2.0 GHz
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QGQb43T
AT-00510
3lO-37l-87l7or
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ • 7 1« CPIPNTS b lE HEW LETT mPPM P I> ■ MM475A4 ME? AT-00510 Up to 4 GHz General Purpose Silicon Bipolar Transistor a c k a rd Features • • • • • OOI OMTB 100 mil Package 16.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi hb at 2.0 GHz
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MM475A4
AT-00510
AT-00510
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Untitled
Abstract: No abstract text available
Text: HEW LETT PACKARD A T -00 510 UP to 4 G H z G en eral P u rp o s e S ilicon B ip o la r T ra n s is to r 100 mil Package Features • 16.0 dBm typical PidB at 2.0 GHz • 10.5 dB typical Gi dB at 2.0 GHz • 2.5 dB typical NFo at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz typical fr
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AT-00510
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