ATC100A101JW
Abstract: ATC100A1R8BW ATC100A240JW GRM31CR72A105KA01 ATC100A270JW NE5531079A-T1-A ne5531
Text: SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology
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NE5531079A
NE5531079A
HS350-P3
WS260
IR260
PU10752EJ01V0DS
ATC100A101JW
ATC100A1R8BW
ATC100A240JW
GRM31CR72A105KA01
ATC100A270JW
NE5531079A-T1-A
ne5531
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atc100a2r4b
Abstract: No abstract text available
Text: Data Sheet NE5550979A R09DS0031EJ0100 Rev.1.00 Nov 25, 2011 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
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NE5550979A
R09DS0031EJ0100
IEC61000-4-2,
NE5550979A
NE5550979A-AZ
atc100a2r4b
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Untitled
Abstract: No abstract text available
Text: Data Sheet NE5550979A R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
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NE5550979A
R09DS0031EJ0200
IEC61000-4-2,
NE5550979A
NE5550979A-A
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ATC100A101JT
Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775
Text: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm
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NE5550979A
R09DS0031EJ0200
IEC61000-4-2,
HS350
NE5550979A
ATC100A101JT
Waka 01K0790-20
ATC100A3R3BW
GRM1882C1H101JA01
GRM31CR72A105KA01B
R-4775
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Untitled
Abstract: No abstract text available
Text: PTAB182002TC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 180-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output
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PTAB182002TC
PTAB182002TC
180-watt
H-49248H-4
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LQW18AN4R7NG00
Abstract: ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01
Text: A NE5550779A RECOMMENDED OPERATING RANGE TA = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions f = 460 MHz, VDS = 7.5 V MIN. – 1.65 – – TYP. 7.5 2.20 1.4 25 MAX. 9.0
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NE5550779A
LQW18AN4R7NG00
ATC100A6R8BW
ATC100A2R7JW
GRM188B31C105KA92
ATC100A120BW
MCR03J103
GQM1882C1H150JB01
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R1766
Abstract: No abstract text available
Text: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
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NE5550979A
R09DS0031EJ0300
IEC61000-4-2,
NE5550979A
NE5550979A-A
R1766
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NE5531079A-T1-A
Abstract: ldmos nec
Text: DATA SHEET SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a
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NE5531079A
NE5531079A
NE5531079A-T1-A
ldmos nec
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R1766
Abstract: No abstract text available
Text: Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
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NE5550779A
R09DS0040EJ0300
NE5550779A
NE5550779A-A
R1766
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ATC100A101JW
Abstract: NE5531079A GRM31CR72A105KA01B ATC100A240JW American Technical Ceramics ordering American Technical Ceramics NE5531079A-T1-A LDMOS NEC ATC100A270JW
Text: SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology and
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NE5531079A
NE5531079A
IR260
WS260
HS350-P3
PU10752EJ01V0DS
ATC100A101JW
GRM31CR72A105KA01B
ATC100A240JW
American Technical Ceramics
ordering American Technical Ceramics
NE5531079A-T1-A
LDMOS NEC
ATC100A270JW
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GRM1882C1H
Abstract: ATC100A101 GRM1882C1H100J ATC100A101JW NE5531079A SOFTWARE OF CIRCUIT MAKER
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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ne5550
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm
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NE5550779A
R09DS0040EJ0300
NE555077
NE5550779A
ne5550
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Panasonic R1766
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm
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NE5550979A
R09DS0031EJ0300
IEC61000-4-2,
Panasonic R1766
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NE5550779A-T1
Abstract: sma 906
Text: Data Sheet NE5550779A R09DS0040EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
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NE5550779A
R09DS0040EJ0200
NE5550779A
NE5550779A-A
NE5550779A-T1
sma 906
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TL256
Abstract: TL160 TL247
Text: PTAB182002FC Thermally-Enhanced High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz Description The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output
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PTAB182002FC
PTAB182002FC
190-watt
H-37248-4
TL256
TL160
TL247
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