250GX-0300-55-22
Abstract: Arlon AN1955 MRF6VP121KHR6 MRF6VP121KHSR6
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed
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MRF6VP121KH
MRF6VP121KHR6
MRF6VP121KHSR6
250GX-0300-55-22
Arlon
AN1955
MRF6VP121KHSR6
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ATC100B1R0CT500XT
Abstract: Variable Gain Amplifiers freescale MRF6VP121KHR6 LDMOS push pull
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 0, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed
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Original
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MRF6VP121KH
MRF6VP121KHR6
MRF6VP121KHSR6
ATC100B1R0CT500XT
Variable Gain Amplifiers freescale
LDMOS push pull
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PDF
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed
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Original
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MRF6VP121KH
MRF6VP121KHR6
MRF6VP121KHSR6
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PDF
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Tantalum Capacitor kemet
Abstract: HSR6 CRCW12061K00FKEA 1030 mhz 3A412 MRF6VP121KHR6 MRF6VP121KHSR6 A114 A115 C101
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 1, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed
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Original
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MRF6VP121KH
MRF6VP121KHR6
MRF6VP121KHSR6
Tantalum Capacitor kemet
HSR6
CRCW12061K00FKEA
1030 mhz
3A412
MRF6VP121KHSR6
A114
A115
C101
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PDF
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250GX-0300-55-22
Abstract: MCGPR63V477M13X26-RH ATC100B360JT500XT ATC100B1R0CT500X MRF6VP121KH ATC100B1R0CT500XT ATC100B3R6CT500XT ATC100B100JT500X JESD22-A114 MRF6VP121KHR6
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 2, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed
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Original
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MRF6VP121KH
MRF6VP121KHR6
MRF6VP121KHSR6
250GX-0300-55-22
MCGPR63V477M13X26-RH
ATC100B360JT500XT
ATC100B1R0CT500X
MRF6VP121KH
ATC100B1R0CT500XT
ATC100B3R6CT500XT
ATC100B100JT500X
JESD22-A114
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PDF
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1007H Rev. 0, 12/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1007HR5 MMRF1007HSR5 RF power transistors designed for applications operating at frequencies
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MMRF1007H
MMRF1007HR5
MMRF1007HSR5
MMRF1007HR5
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