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    Vishay Dale CRCW12061K00FKEA

    RES SMD 1K OHM 1% 1/4W 1206
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    Vishay Dale CRCW12061K00FKEAC

    RES SMD 1K OHM 1% 1/4W 1206
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    Vishay Intertechnologies CRCW12061K00FKEA

    SMD Chip Resistor, 1 kOhm, ? 1%, 250 mW, 1206 [3216 Metric], Thick Film, General Purpose - Tape and Reel (Alt: CRCW12061K00FKEA)
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    Res Thick Film 1206 1K Ohm 1% 1/4W ?100ppm/?C Molded SMD Paper T/R - Tape and Reel (Alt: CRCW12061K00FKEAC)
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    CRCW12061K00FKEA Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CRCW12061K00FKEA Vishay RES 1.00K OHM 1/8W 1% 1206 SMD Original PDF
    CRCW12061K00FKEAC Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 1K OHM 1% 1/4W 1206 Original PDF
    CRCW12061K00FKEAHP Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 1K OHM 1% 3/4W 1206 Original PDF

    CRCW12061K00FKEA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09S200W02N Rev. 0, 4/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability


    Original     		PDF AFT09S200W02N 716lidated AFT09S200W02NR3 AFT09S200W02GNR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S18260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with


    Original     		PDF MRF8S18260H MRF8S18260HR6 MRF8S18260HSR6 MRF8S18260HR6

    Untitled

    Abstract: No abstract text available
    Text: CDB1601-120W CS1601 120W, High-efficiency PFC Demonstration Board Features General Description  Line Voltage Range: 108 to 305 VACrms  Output Voltage VLINK : 460V  Rated Pout : 115W  Efficiency: 95% @ 115W  Spread Spectrum Switching Frequency


    Original     		PDF CDB1601-120W CS1601 CDB1601-120W 230VAC DS931DB4 277VAC

    CTX22-16134

    Abstract: No abstract text available
    Text: NCP1230GEVB NCP1230 90 Watt, Universal Input Adapter Power Supply Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL General Description Design Specification The NCP1230 implements a standard current mode control architecture. It’s an ideal candidate for applications


    Original     		PDF NCP1230GEVB NCP1230 EVBUM2131/D CTX22-16134

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: A2T26H160-24S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to


    Original     		PDF A2T26H160--24S A2T26H160-24SR3

    250GX-0300-55-22

    Abstract: Arlon AN1955 MRF6VP121KHR6 MRF6VP121KHSR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed


    Original     		PDF MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 250GX-0300-55-22 Arlon AN1955 MRF6VP121KHSR6

    Untitled

    Abstract: No abstract text available
    Text: T2G4003532-FL 30W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G4003532-FL T2G4003532-FL TQGaN25

    C4532X7RIH685K

    Abstract: ATC600F1R0BT250XT AN1955 J373
    Text: Document Number: MRF8S18260H Rev. 0, 9/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with


    Original     		PDF MRF8S18260H MRF8S18260HR6 MRF8S18260HSR6 MRF8S18260HR6 C4532X7RIH685K ATC600F1R0BT250XT AN1955 J373

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S26120HR3 MRF8S26120HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S26120H MRF8S26120HR3 MRF8S26120HSR3 MRF8S26120HR3

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SBOU057 – February 2008 BUF16821EVM Evaluation Board and Software Tutorial This user's guide describes the characteristics, operation, and use of the BUF16821EVM evaluation board. It discusses how to set up and configure the software and hardware, and reviews various aspects


    Original     		PDF SBOU057 BUF16821EVM BUF16821EVM.

    J014

    Abstract: BLM21PG300SN1D
    Text: Document Number: MRF8S8260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S8260H MRF8S8260HR3 MRF8S8260HSR3 MRF8S8260H J014 BLM21PG300SN1D

    MW7IC930N

    Abstract: J492 atc100b6r2 ATC100B470JT500XT GRM55DR61H106K MW7IC930NR1 A114 A115 AN1977 AN1987
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC930N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC930N wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 960 MHz. This multi - stage


    Original     		PDF MW7IC930N MW7IC930N MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 J492 atc100b6r2 ATC100B470JT500XT GRM55DR61H106K A114 A115 AN1977 AN1987

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S8260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S8260H MRF8S8260HR3 MRF8S8260HSR3

    vishay rf output power transistor

    Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw "RF Power Transistor" 35W amplifiers 600S100
    Text: T1G4003532-FL 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G4003532-FL T1G4003532-FL vishay rf output power transistor tRANSISTOR 2.7 3.1 3.5 GHZ cw "RF Power Transistor" 35W amplifiers 600S100

    ATC100B3R9CT500XT

    Abstract: BLM21PG300SN1D ATC100B430JT500X AN1955 ATC100B430JT500XT GRM55ER72A475KA01 C13-C28 465B-03
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S8260H Rev. 0, 1/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S8260H MRF8S8260HR3 MRF8S8260HSR3 ATC100B3R9CT500XT BLM21PG300SN1D ATC100B430JT500X AN1955 ATC100B430JT500XT GRM55ER72A475KA01 C13-C28 465B-03

    CRCW060333R0FKEA

    Abstract: 70201152 CRCW08054K70FK CRCW0603604RFKEA CRCW08054K70FKEA CRCW08050000Z0EA CRCW06031K62FKEA CRCW08054K99FKEA crcw0603511rfkea CRCW0805330RFK
    Text: 1872-2012.qxp:QuarkCatalogTempNew 9/10/12 2:56 PM Page 1872 INTERCONNECT TEST & MEASUREMENT 23 Thick Film Chip Resistors CRCW Series — Thick Film, Rectangular Chip Resistors RoHS ᭤ Metal Glaze on High Quality Ceramic ᭤ Protective Overglaze ᭤ Solder Contacts on Ni Barrier Layer


    Original     		PDF

    C4532X7RIH685K

    Abstract: No abstract text available
    Text: Document Number: MRF8S18260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with


    Original     		PDF MRF8S18260H MRF8S18260HR6 MRF8S18260HSR6 MRF8S18260HSR6 MRF8S18260H C4532X7RIH685K

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MD8IC925N Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on−chip matching that makes it usable from 728 to 960 MHz. This multi−stage


    Original     		PDF MD8IC925N MD8IC925N MD8IC925NR1 MD8IC925GNR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed


    Original     		PDF MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SBOU066 – September 2008 BUF08821EVM Evaluation Board and Software Tutorial This user's guide describes the characteristics, operation, and use of the BUF08821EVM evaluation board. It discusses how to set up and configure the software and hardware, and reviews various aspects


    Original     		PDF SBOU066 BUF08821EVM BUF08821EVM.

    OTS-38

    Abstract: No abstract text available
    Text: User's Guide SBOU053 – September 2007 BUF22821EVM Evaluation Board and Software Tutorial This user's guide describes the characteristics, operation, and use of the BUF22821EVM evaluation board. It discusses how to set up and configure the software and hardware, and reviews various aspects


    Original     		PDF SBOU053 BUF22821EVM BUF22821EVM. OTS-38

    MW7IC930NR1

    Abstract: MCGPR35V337M10X16-RH ATC100B470JT500XT AN1987 MW7IC930GNR1 MW7IC930NBR1 AN1977 C0603C103J5RACTU
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC930N Rev. 1, 10/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC930N wideband integrated circuit is designed with on-chip matching that makes it usable from 728 to 960 MHz. This multi-stage


    Original     		PDF MW7IC930N MW7IC930N MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 MCGPR35V337M10X16-RH ATC100B470JT500XT AN1987 MW7IC930NBR1 AN1977 C0603C103J5RACTU

    transistor J128

    Abstract: j128 MRF8S7120N mpz2012s300AT CRCW12061K00FKEA 748 transistor on AN1955 MPZ2012S300AT000 ATC100B1R0BT500XT MRF8S7120NR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S7120N Rev. 0, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7120NR3 Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S7120N MRF8S7120NR3 transistor J128 j128 MRF8S7120N mpz2012s300AT CRCW12061K00FKEA 748 transistor on AN1955 MPZ2012S300AT000 ATC100B1R0BT500XT MRF8S7120NR3

    RLCS-1007

    Abstract: No abstract text available
    Text: CDB150x-01 CS1501 90W, High-efficiency PFC Demonstration Board Features General Description  Variable On Time, Variable Frequency, DCM PFC Controller The CDB150x-01 board demonstrates the performance of the CS1501 digital PFC controller with a 90 watt output at a link voltage of 400 volts.


    Original     		PDF CDB150x-01 CS1501 CDB150x-01 CS1501 CDB150x-01-Z 254mm DS927DB4 RLCS-1007