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Kyocera AVX Components 600F1R1BT250XT Silicon RF Capacitors / Thin Film 250volts 1.1pF NP0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	600F1R1BT250XT		1,104			1 $0.98 10 $0.458 100 $0.451 1000 $0.424 10000 $0.326	Buy Now

ATC600F1R1BT250XT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8P20161HS MRF8P20161HSR3
mosfet J442 Abstract: ATC600F2R0BT250XT J442 CW12010T0050G ATC600F100JT250XT CW12010T0050GBK AN1955 96VDD J596 Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8P20161HS MRF8P20161HSR3 mosfet J442 ATC600F2R0BT250XT J442 CW12010T0050G ATC600F100JT250XT CW12010T0050GBK AN1955 96VDD J596
CW12010T0050GBK Abstract: J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA Text: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to	Original	PDF	MRF8P2160H MRF8P20160HR3 MRF8P20160HSR3 MRF8P20160HR3 CW12010T0050GBK J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to	Original	PDF	MRF8P2160H MRF8P20160HR3 MRF8P20160HSR3 MRF8P20160HR3
Untitled Abstract: No abstract text available Text: Document Number: MMRF2006N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier MMRF2006NT1 The MMRF2006N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170 MHz. This multi-stage	Original	PDF	MMRF2006N MMRF2006NT1 MMRF2006N
CW12010T0050GBK Abstract: CW12010T0050G J965 ATC600F1R1BT250XT Transistor J550 Text: Document Number: MRF8P20160H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8P20160H MRF8P20160HSR3 CW12010T0050GBK CW12010T0050G J965 ATC600F1R1BT250XT Transistor J550
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW7IC2020N Rev. 1, 12/2013 RF LDMOS Wideband Integrated Power Amplifier MW7IC2020NT1 The MW7IC2020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170 MHz. This multi-stage	Original	PDF	MW7IC2020N MW7IC2020NT1 MW7IC2020N 211ver
ATC600F330JT250XT Abstract: J706 W5043 J-104 J420 Text: Freescale Semiconductor Technical Data Document Number: MW7IC2020N Rev. 0, 1/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC2020NT1 The MW7IC2020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170 MHz. This multi-stage	Original	PDF	MW7IC2020N MW7IC2020NT1 ATC600F330JT250XT J706 W5043 J-104 J420
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW7IC2020N Rev. 0, 1/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC2020NT1 The MW7IC2020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170 MHz. This multi-stage	Original	PDF	MW7IC2020N MW7IC2020NT1 MW7IC2020N
hitachi rf ldmos Abstract: MMG15241H crcw120610k0fkea Text: Freescale Semiconductor Technical Data Available at http://freescale.com/RFMMIC > Design Support > Reference Designs Rev. 0, 2/2012 RF Power Reference Design MMG15241H Driving MD7IC2250N W-CDMA RF Power Amplifier Lineup GaAs E-pHEMT Driving RF LDMOS Amplifier Lineup Characteristics	Original	PDF	MMG15241H MD7IC2250N hitachi rf ldmos crcw120610k0fkea