ATC600F2R0BT250XT Search Results

ATC600F2R0BT250XT Price and Stock

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Kyocera AVX Components 600F2R0BT250XT Silicon RF Capacitors / Thin Film 250volts 2pF NP0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	600F2R0BT250XT		3,514			1 $1.67 10 $1.05 100 $0.737 1000 $0.568 10000 $0.483	Buy Now
TTI	600F2R0BT250XT	Reel	1,000		500	1 - 10 - 100 - 1000 $0.529 10000 $0.492	Buy Now
American Technical Ceramics Corp ATC600F2R0BT250XT CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 250V, 2.5% +TOL, 2.5% -TOL, C0G, 30PPM/CEL TC, 0.000002UF, SURFACE MOUNT, 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC600F2R0BT250XT		32			1 $1.25 10 $1 100 $0.625 1000 $0.625 10000 $0.625	Buy Now

ATC600F2R0BT250XT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8P20161HS MRF8P20161HSR3	PDF
mosfet J442 Abstract: ATC600F2R0BT250XT J442 CW12010T0050G ATC600F100JT250XT CW12010T0050GBK AN1955 96VDD J596 Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8P20161HS MRF8P20161HSR3 mosfet J442 ATC600F2R0BT250XT J442 CW12010T0050G ATC600F100JT250XT CW12010T0050GBK AN1955 96VDD J596	PDF
Transistor J550 Abstract: j584 transistor Text: Document Number: AFT26H200W03S Rev. 0, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT26H200W03S AFT26H200W03SR6 Transistor J550 j584 transistor	PDF
CW12010T0050GBK Abstract: J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA Text: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to	Original	MRF8P2160H MRF8P20160HR3 MRF8P20160HSR3 MRF8P20160HR3 CW12010T0050GBK J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA	PDF
ATC600S10 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth	Original	MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WHR3 ATC600S10	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to	Original	MRF8P2160H MRF8P20160HR3 MRF8P20160HSR3 MRF8P20160HR3	PDF
Untitled Abstract: No abstract text available Text: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this	Original	MMRF1021N MMRF1021NT1	PDF
ATC600S2R7BT250XT Abstract: ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth	Original	MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WH ATC600S2R7BT250XT ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT	PDF
Z6 3pin Abstract: J262 AFT09MS007NT1 Text: Freescale Semiconductor Technical Data Document Number: AFT09MS007N Rev. 1, 4/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this	Original	AFT09MS007N AFT09MS007NT1 Z6 3pin J262 AFT09MS007NT1	PDF
J477 Abstract: J733 J449 MD7IC2250 MD7IC2250N AN1977 IRL 501 TO272* APPLICATION AN1987 ATC600F330JT250XT Text: Freescale Semiconductor Technical Data Document Number: MD7IC2250N Rev. 0, 12/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2250N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage	Original	MD7IC2250N MD7IC2250N MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 J477 J733 J449 MD7IC2250 AN1977 IRL 501 TO272* APPLICATION AN1987 ATC600F330JT250XT	PDF
J733 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MD7IC2250N Rev. 0, 12/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2250N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage	Original	MD7IC2250N MD7IC2250N MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 J733	PDF
CW12010T0050GBK Abstract: CW12010T0050G J965 ATC600F1R1BT250XT Transistor J550 Text: Document Number: MRF8P20160H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8P20160H MRF8P20160HSR3 CW12010T0050GBK CW12010T0050G J965 ATC600F1R1BT250XT Transistor J550	PDF
N/A9M07 Abstract: No abstract text available Text: Document Number: AFT09MS007N Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N−Channel Enhancement−Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two−way radio applications with frequencies from	Original	AFT09MS007N AFT09MS007NT1 N/A9M07	PDF
hitachi rf ldmos Abstract: MMG15241H crcw120610k0fkea Text: Freescale Semiconductor Technical Data Available at http://freescale.com/RFMMIC > Design Support > Reference Designs Rev. 0, 2/2012 RF Power Reference Design MMG15241H Driving MD7IC2250N W-CDMA RF Power Amplifier Lineup GaAs E-pHEMT Driving RF LDMOS Amplifier Lineup Characteristics	Original	MMG15241H MD7IC2250N hitachi rf ldmos crcw120610k0fkea	PDF